| No. | Partie # | Fabricant | Description | Fiche Technique |
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ON Semiconductor |
N-Channel MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 150 mW • Ultra Low Gate Charge (Typ. Qg = 75 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF ) • 100% Avalanche Tested • This Device is Pb−Free Applications • Solar Inverter • AC−DC Power Supply |
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Fairchild Semiconductor |
N-Channel MOSFET • 650V @ TJ = 150°C • Typ. RDS(on) = 150 mΩ • Ultra Low Gate Charge (Typ. Qg = 75 nC ) • Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF ) • 100% Avalanche Tested Applications • Solar Inverter • AC-DC Power Supply Description SuperFET® MO |
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Fairchild Semiconductor |
N-Channel MOSFET • 650V @TJ = 150°C • Typ. Rds(on)=0.22Ω • Ultra low gate charge (typ. Qg=55nC) • Low effective output capacitance (typ. Coss.eff=110pF) • 100% avalanche tested Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET |
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Fairchild Semiconductor |
N-Channel MOSFET • BVDSS > 650 V @ TJ = 150oC • RDS(on) = 140 mΩ (Typ.) @ VGS = 10 V, ID = 11 A • Ultra Low Gate Charge (Typ. Qg = 45 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 196.4 pF) • 100% Avalanche Tested • RoHS Compliant Application • PDP TV • S |
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Fairchild Semiconductor |
N-Channel MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 58 mΩ • Ultra Low Gate Charge (Typ. Qg= 210 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF) • 100% Avalanche Tested Application • Solar Invertor • AC-DC Power Supply Description SuperFET® MOSFE |
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Fairchild Semiconductor |
N-CHANNEL FRFET MOSFET Description • 650 V @ TJ = 150°C • Typ. RDS(on) = 150 mΩ • Fast Recovery Type (Typ. Trr = 160 ns ) • Ultra Low Gate Charge (Typ. Qg = 75 nC ) • Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF ) • 100% Avalanche Tested • RoHS Compliant Ap |
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Fairchild Semiconductor |
600V N-Channel MOSFET • 650V @TJ = 150°C • Typ. Rds(on)=0.22Ω • Ultra low gate charge (typ. Qg=55nC) • Low effective output capacitance (typ. Coss.eff=110pF) • 100% avalanche tested September 2006 TM Description SuperFETTM is, Farichild’s proprietary, new generation of |
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Fairchild Semiconductor |
600V N-Channel MOSFET • 650V @ TJ = 150°C • Typ.RDS(on) = 0.079Ω • Ultra low gate charge ( Typ. Qg = 139nC ) • Low effective output capacitance ( Typ. Coss.eff = 340pF ) • 100% avalanche tested SuperFETTM Description SuperFETTM is Farichild’s proprietary, new generation |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 0.17Ω ( Typ.)@ VGS = 10V, ID = 8A • Ultra low gate charge ( Typ. Qg = 40.2nC) • Low effective output capacitance • 100% avalanche tested • RoHS compliant Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super- |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 80 mΩ (Typ.) @ VGS = 10V, ID = 18 A • Ultra Low Gate Charge (Typ. Qg = 86 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 338 pF) • 100% Avalanche Tested • RoHS Compliant Application • Solar Inverter • AC-DC Power Supply Descri |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 28 mΩ (Typ. ) @ VGS = 10 V, ID = 38 A • Ultra Low Gate Charge (Typ. Qg = 218 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 914 pF) • 100% Avalanche Tested • RoHS Compliant Application • Solar Inverter • AC-DC Power Supply Des |
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Fairchild Semiconductor |
N-Channel MOSFET • 650V @TJ = 150°C • Typ. Rds(on)=0.22Ω • Ultra low gate charge (typ. Qg=55nC) • Low effective output capacitance (typ. Coss.eff=110pF) • 100% avalanche tested Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET |
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Fairchild Semiconductor |
N-Channel MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 58 mΩ • Ultra Low Gate Charge (Typ. Qg= 210 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF) • 100% Avalanche Tested Application • Solar Invertor • AC-DC Power Supply Description SuperFET® MOSFE |
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ON Semiconductor |
N-Channel SupreMOS MOSFET • RDS(on) = 28 mΩ (Typ. ) @ VGS = 10 V, ID = 38 A • Ultra Low Gate Charge (Typ. Qg = 218 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 914 pF) • 100% Avalanche Tested • RoHS Compliant Application • Solar Inverter • AC-DC Power Supply Des |
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ON Semiconductor |
N-Channel MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 62 mW • Fast Recovery Time (Typ. Trr = 240 ns) • Ultra Low Gate Charge (Typ. Qg = 210 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Sola |
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Fairchild Semiconductor |
Smart Power Module • Very low thermal resistance due to using DBC • 600V-50A single-phase asymmetric bridge IGBT converter for SRM drive including control ICs for gate driving and protection • Divided negative dc-link terminals for inverter current sensing applications |
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Fairchild Semiconductor |
600V N-Channel MOSFET • 650V @TJ = 150°C • Typ. RDS(on) = 0.062Ω • Fast Recovery Type ( trr = 240ns) • Ultra Low Gate Charge (typ. Qg = 210nC) • Low Effective Output Capacitance (typ. Cosseff. = 420pF) • 100% avalanche tested January 2009 TM Description SuperFETTM is, |
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