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Fairchild Semiconductor |
NPN Silicon Transistor itance fT Current Gain Bandwidth Product tON Turn On Time tSTG Storage Time tF Fall Time * Pulse test: PW≤300µs, Duty cycle≤2% VEB = 9V, IC = 0 VCE = 5V, IC = 2A VCE = 5V, IC = 5A IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A IC = 2A, I |
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ON Semiconductor |
NPN Bipolar Power Transistor • SOA and Switching Applications Information • Standard TO−220 • These Devices are Pb−Free and are RoHS Compliant* • Complementary to the MJE5850 through MJE5852 Series MAXIMUM RATINGS Rating Collector−Emitter Sustaining Voltage Collector−Base Bre |
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Fairchild Semiconductor |
KSE13009L VCE = 10V, IC = 0.5A VCC =125V, IC = 8A IB1 = - IB2 = 1.6A RL = 15,6Ω 4 1.1 3 0.7 180 8 6 Min. 400 Typ. Max. 1 40 30 1 1.5 3 1.2 1.6 V V V V V pF MHz µs µs µs Units V mA VBE(sat) Cob fT tON tSTG tF Base-Emitter Saturation Voltage Output Capacitance |
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Thinki Semiconductor |
(MJE13005 Series) Silicon NPN Power Transistor — — 4 2.0 Typ. — — — — — — — 2.5 Max. 10 10 — 30 1.5 1.6 — 4.0 V V MHz us Unit uA uA V ICBO IEBO VCEO hFE VCE(sat) IC=4.0A,IB=1.0A VBE(sat) IC=2.0A,IB=0.5A fT tS VCE=10V, IC=0.5A IB1=-IB2=0.5A, Page 1/1 © 2006 Thinki Semiconductor Co.,Ltd. http: |
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Fairchild Semiconductor |
NPN Silicon Transistor uty Cycle≤2% IC = 10mA, IB = 0 VEB = 9V, IC = 0 VCE = 5V, IC = 2A VCE = 5V, IC = 5A IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A IC = 2A, IB = 0.4A IC = 5A, IB = 1A VCB = 10V , f = 0.1MHz VCE = 10V, IC = 0.5A VCC =125V, IC = 5A IB1 = - IB2 = |
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Fairchild Semiconductor |
KSE13005 2A, IB = 0.5A IC = 4A, IB = 1A IC = 1A, IB = 0.2A IC = 2A, IB = 0.5A VCB = 10V, f = 0.1MHz VCE = 10V, IC = 0.5A VCC = 125V, IC = 2A IB1 = - IB2 = 0.4A RL = 62.5Ω 4 0.8 4 0.9 65 10 8 Min. 300 400 1 60 40 0.5 0.6 1 1.2 1.6 V V V V V pF MHz µs µs µs Ty |
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Fairchild Semiconductor |
NPN Silicon Transistor 0µs, Duty Cycle≤2% IC = 10mA, IB = 0 VEB = 9V, IC = 0 VCE = 5V, IC = 2A VCE = 5V, IC = 5A IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A IC = 2A, IB = 0.4A IC = 5A, IB = 1A VCB = 10V , f = 0.1MHz VCE = 10V, IC = 0.5A VCC =125V, IC = 5A IB1 = - |
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Fairchild Semiconductor |
NPN Silicon Transistor 12A, IB = 3A IC = 5A, IB = 1A IC = 8A, IB = 1.6A VCB = 10V, f = 0.1MHz VCE = 10V, IC = 0.5A VCC = 125V, IC = 8A IB1 = - IB2 = 1.6A RL = 15,6Ω 4 1.1 3 0.7 180 8 6 Min. 300 400 1 40 30 1 1.5 3 1.2 1.6 V V V V V pF MHz µs µs µs Typ. Max. Units V V mA I |
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Comset Semiconductors |
SILICON POWER TRANSISTOR ase Thermal Resistance From Junction to Free-Air Thermal Resistance Value 1.56 62.5 Unit °C/W 02/10/2012 COMSET SEMICONDUCTORS 1/3 datasheet pdf - http://www.DataSheet4U.net/ SEMICONDUCTORS MJE13007 ELECTRICAL CHARACTERISTICS TC=25°C unless o |
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ON Semiconductor |
4-BIT D FLIP-FLOP • 1100 MHz Min. Toggle Frequency • Differential Outputs • Individual and Common Clocks • Individual Resets (asynch |
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Fairchild Semiconductor |
(1.5KE Series) 1500 Watt Transient Voltage Suppressors • • • • • Glass passivated junction. 1500W Peak Pulse Power capability at 1.0 ms. Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less than 1.0 ps from 0 volts to BV for unidirectional and 5.0 ns for bid |
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Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor mA VCB=10V, IE=0, f=1MHz 50 4 40 Min. 400 400 7 0.1 80 0.5 V MHz pF Typ. Max. Units V V V µA hFE Classification Classification hFE R 40 ~ 65 O 55 ~ 80 ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSE13001 Typical Characteristics |
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Fairchild Semiconductor |
NPN Silicon Transistor A A W °C °C hFE Classification Classification hFE* * Test on VCE = 2V, IC = 0.5A. H1 9 ~ 16 H2 14~ 21 H3 19 ~ 26 © 2007 Fairchild Semiconductor Corporation KSE13003 Rev. 1.0.0 1 www.fairchildsemi.com KSE13003 — NPN Silicon Transistor Electr |
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Fairchild Semiconductor |
NPN Silicon Transistor = 2A IC = 2A, IB = 0.4A IC = 5A, IB = 1A VCB = 10V, f = 0.1MHz VCE = 10V, IC = 0.5A VCC = 125V, IC = 5A IB1 = -IB2 = 1A RL = 50Ω 4 1.6 3 0.7 110 8 5 Min. 300 400 1 60 30 1 2 3 1.2 1.6 V V V V V pF MHz µs µs µs Typ. Max. Units V V mA IEBO hFE VCE(sa |
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Fairchild Semiconductor |
NPN Silicon Transistor CE = 10V, IC = 0.5A VCC =125V, IC = 8A IB1 = - IB2 = 1.6A RL = 15,6Ω 4 1.1 3 0.7 180 8 6 Min. 400 Typ. Max. 1 40 30 1 1.5 3 1.2 1.6 V V V V V pF MHz µs µs µs Units V mA VBE(sat) Cob fT tON tSTG tF Base-Emitter Saturation Voltage Output Capacitance |
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Digitron Semiconductors |
TRANISENT VOLTAGE SUPPRESSOR Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. For Bidirectional construction, indicate a |
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Fairchild Semiconductor |
NPN Silicon Transistor = 2A IC = 2A, IB = 0.4A IC = 5A, IB = 1A VCB = 10V, f = 0.1MHz VCE = 10V, IC = 0.5A VCC = 125V, IC = 5A IB1 = -IB2 = 1A RL = 50Ω 4 1.6 3 0.7 110 8 5 Min. 300 400 1 60 30 1 2 3 1.2 1.6 V V V V V pF MHz µs µs µs Typ. Max. Units V V mA IEBO hFE VCE(sa |
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Fairchild Semiconductor |
NPN Silicon Transistor 12A, IB = 3A IC = 5A, IB = 1A IC = 8A, IB = 1.6A VCB = 10V, f = 0.1MHz VCE = 10V, IC = 0.5A VCC = 125V, IC = 8A IB1 = - IB2 = 1.6A RL = 15,6Ω 4 1.1 3 0.7 180 8 6 Min. 300 400 1 40 30 1 1.5 3 1.2 1.6 V V V V V pF MHz µs µs µs Typ. Max. Units V V mA I |
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Taiwan Semiconductor |
(1.5KE Series) Transient Voltage Suppressor Diodes UL Recognized File # E-96005 Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Exceeds environmental standards of MIL-STD-19500 1500W surge capability at 10 x 100 us waveform, duty cycle: 0.01% Excellent clamping capabilit |
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Taiwan Semiconductor |
(1.5KE Series) Transient Voltage Suppressor Diodes UL Recognized File # E-96005 Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Exceeds environmental standards of MIL-STD-19500 1500W surge capability at 10 x 100 us waveform, duty cycle: 0.01% Excellent clamping capabilit |
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