| No. | Partie # | Fabricant | Description | Fiche Technique |
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Thinki Semiconductor |
Common Cathode Fast Recovery Epitaxial Diode · Ultrafast Recovery Time · Soft Recovery Characteristics · Low Recovery Loss · Low Forward Voltage · High Surge Current Capability · Low Leakage Current Internal Configuration Base Backside — Anode Cathode Anode GENERAL DESCRIPTION 60CPH03 using |
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Panasonic Semiconductor |
Round Type 0 VF Min 5.0 8.0 6.0 10.0 mcd IF 20 20 20 20 mA Typ 2.1 2.1 2.1 2.1 V Max 2.8 2.8 2.8 2.8 V λP Typ 630 630 630 630 nm ∆λ Typ 40 40 40 40 nm IR IF 20 20 20 20 mA Max 10 10 10 10 µA VR 3 3 3 3 V IO IF 50 IF VF Relative Luminous Intensity 500 |
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Panasonic Semiconductor |
Round Type 0 VF Min 5.0 8.0 6.0 10.0 mcd IF 20 20 20 20 mA Typ 2.1 2.1 2.1 2.1 V Max 2.8 2.8 2.8 2.8 V λP Typ 630 630 630 630 nm ∆λ Typ 40 40 40 40 nm IR IF 20 20 20 20 mA Max 10 10 10 10 µA VR 3 3 3 3 V IO IF 50 IF VF Relative Luminous Intensity 500 |
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Panasonic Semiconductor |
Round Type IO Ta IO (mcd) Luminous Intensity 50 30 IF (mA) Forward Current 30 LN 41 YC PH YP H 10 5 3 10 5 3 100 50 30 1 1 LN 41 3 5 10 30 50 100 1 1.6 1.8 2.0 2.2 2.4 10 −20 0 20 40 60 80 100 IF (mA) Forward Current VF (V) Fo |
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ON Semiconductor |
Pin Diode • Small interterminal capacitance (C=0.23pF typ). • Small forward series resistance (rs=2.5Ω typ). • Composite type with 2 diodes contained in a CPH package currently in use, improving the mounting efficiency greatly. Specifications Absolute Maximu |
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ON Semiconductor |
N-Channel Power MOSFET • Low On-resistance • Best suited for LiB charging and discharging switch • With a built-in gate resistor • Protection diode in • 2.5V drive • Common-drain type • Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parame |
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Panasonic Semiconductor |
5.0 mm Series 1.0 2.5 1.0 2.0 mcd IF 15 15 15 15 mA Typ 2.2 2.2 2.2 2.2 V VF Max 2.8 2.8 2.8 2.8 V λP Typ 700 700 700 700 nm ∆λ Typ 100 100 100 100 nm IR IF 20 20 20 20 mA Max 5 5 5 5 µA VR 4 4 4 4 V IO IF 50 IF VF Reletive Luminous Intensity 500 300 I |
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Panasonic Semiconductor |
5.0 mm Series 1.0 2.5 1.0 2.0 mcd IF 15 15 15 15 mA Typ 2.2 2.2 2.2 2.2 V VF Max 2.8 2.8 2.8 2.8 V λP Typ 700 700 700 700 nm ∆λ Typ 100 100 100 100 nm IR IF 20 20 20 20 mA Max 5 5 5 5 µA VR 4 4 4 4 V IO IF 50 IF VF Reletive Luminous Intensity 500 300 I |
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TDK Semiconductor |
Bobbins 0EER42/42/20AXXX PC40EER49AXXX ∗ AL-value (nH/N2) [1kHz, 0.5mA, 100Ts] 1920±25% 2870±25% 2520±25% 2770±25% 3620±25% 4690±25% 5340±25% 6250±25% AL-value (nH/N2) [1kHz, 0.5mA, 100Ts] 100±5%, 200±7% 200±5%, 400±7% 160±5%, 315±7% 200±5%, 400±7% 200±5%, |
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ON Semiconductor |
Bipolar Transistor • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm) • High allowable power dissipation |
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ON Semiconductor |
Bipolar Transistor • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm) • High allowable power dissipation |
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ON Semiconductor |
Bipolar Transistor • Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density mounting • Ultrasmall package facilitate miniaturization in end products. (0.9mm mounting height) Specifications ( ): PNP Absolute Maxim |
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ON Semiconductor |
N-Channel JFET and NPN Bipolar Transistor • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting efficiency greatly • The CPH5901 is formed with two chips, being equivalent to the 2SK932 and the other the 2SC4639, placed in one package • Common |
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ON Semiconductor |
Power MOSFET • On-resistance RDS(on)1=120mΩ (typ) • 4V drive • Halogen free compliance Electrical Connection P-Channel 3 Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Value Unit Drain to Source Voltage Gate to Source Voltage Drain |
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ON Semiconductor |
Power MOSFET • Low ON-Resistance • 4V Drive • Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Value Unit Drain to Source Voltage VDSS −30 V Gate to Source Voltage VGSS ±20 V Drain Curren |
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ON Semiconductor |
Power MOSFET • Low On-Resistance • 4V Drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage VDSS Gate to Source Voltage Drain Current (DC) |
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ON Semiconductor |
Power MOSFET • 4V Drive • Low On-Resistance • ESD Diode-Protected Gate • Pb-Free, and RoHS Compliance • Halogen Free Compliance : CPH6442-TL-W Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltag |
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ON Semiconductor |
Power MOSFET • Low On-Resistance • 4V drive • Pb-Free, Halogen Free and RoHS compliance Typical Applications • Load Switch • Motor Drive SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1, 2) Parameter Symbol Value Unit Drain to Source Voltage VD |
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ON Semiconductor |
RF Transistor • High gain (fT=7GHz typ) • High Current (IC=150mA) • Ultraminiature and thin 6pin package • Large Collector Disspation (800mW) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to- Base Voltage Collector-to-Emitter Voltage Emi |
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ON Semiconductor |
Bipolar Transistor • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High speed switching • Ultrasmall-sized package permitting applied sets to be made small and slim (0.9mm) • High allowable power dissipation • IECO is |
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