| No. | Partie # | Fabricant | Description | Fiche Technique |
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ON Semiconductor |
Isolated Dual Channel IGBT/MOSFET Gate Driver • High Peak Output Current (±6.5 A*, ±3.5 A*) • Configurable as a Dual Low−Side or Dual High−Side or Half−Bridge Driver • Programmable Overlap or Dead Time control • Disable Pin to Turn Off Outputs for Power Sequencing • ANB Function to Offer Flexibi |
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Powerex Power Semiconductors |
Dual Diode POW-R-BLOK Modules 250 Amperes/800 Volts Ⅺ Isolated Mounting Ⅺ Glass Passivated Chips Ⅺ Metal Baseplate A1 1 K1 K2 3 2 A2 4 *AI-K2 connection made by external shorting bar. Outline Drawing Dimension A B C D E F G H J K L M N P Inches 5.906 2.697±0.02 1.575 1.535 1.260 1.181 0.906 0. |
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Powerex Power Semiconductors |
Dual Diode POW-R-BLOK Modules 250 Amperes/1200-1600 Volts Ⅺ Isolated Mounting Ⅺ Glass Passivated Chips Ⅺ Metal Baseplate A1 1 K1 K2 3 2 A2 4 *AI-K2 connection made by external shorting bar. Outline Drawing Dimension A B C D E F G H J K L M N P Inches 5.906 2.697±0.02 1.575 1.535 1.260 1.181 0.906 0. |
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ON Semiconductor |
Isolated High Current IGBT Gate Driver include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT protection, and soft turn−off at DESAT. NCD57001 accommodates both 5 V and 3.3 V signals on the input side and wide bias voltage range on the |
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ON Semiconductor |
IGBT/MOSFET Gate Driver • High Peak Output Current (+6.5 A/−6.5 A) • Low Clamp Voltage Drop Eliminates the Need of Negative Power Supply to Prevent Spurious Gate Turn−on (Version A/D/F) • Short Propagation Delays with Accurate Matching • IGBT/MOSFET Gate Clamping during Sho |
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ON Semiconductor |
Isolated Dual Channel IGBT Gate Driver • High Peak Output Current (±6.5 A) • Configurable as a Dual Low−Side or Dual High−Side or Half−Bridge Driver • Programmable Overlap or Dead Time control • Disable Pin to Turn Off Outputs for Power Sequencing (NCx57540) • Enable Pin for Independent D |
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Powerex Power Semiconductors |
Dual Diode POW-R-BLOK Modules 250 Amperes/1200-1600 Volts Ⅺ Isolated Mounting Ⅺ Glass Passivated Chips Ⅺ Metal Baseplate A1 1 K1 K2 3 2 A2 4 *AI-K2 connection made by external shorting bar. Outline Drawing Dimension A B C D E F G H J K L M N P Inches 5.906 2.697±0.02 1.575 1.535 1.260 1.181 0.906 0. |
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Siemens Semiconductor |
(SCD5580 - SCD5584) Serial Input Dot Addressable Intelligent Display • Eight 0.145" (3.68 mm) 5x5 dot matrix characters in red, yellow, high efficiency red, green, or high efficiency green • Optimum display surface efficiency (display area to package ratio) • Low power –30% less power dissipation than 5x7 format • High sp |
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Fairchild Semiconductor |
600V N-Channel MOSFET • 650V @TJ = 150°C • Typ. Rds(on)=0.81Ω • Ultra low gate charge (typ. Qg=16nC) • Low effective output capacitance (typ. Coss.eff=32pF) • 100% avalanche tested TM Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOS |
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ON Semiconductor |
Isolated High Current IGBT Gate Driver • High Peak Output Current (+6.5 A/−6.5 A) • Low Clamp Voltage Drop Eliminates the Need of Negative Power Supply to Prevent Spurious Gate Turn−on (Version A) • Short Propagation Delays with Accurate Matching • IGBT/MOSFET Gate Clamping during Short C |
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ON Semiconductor |
High Current IGBT Gate Driver include Active Miller Clamp, accurate UVLO, EN input, DESAT protection and Active open−drain FAULT output. The driver also features an accurate 5.0 V output and separate high and low (VOH and VOL) driver outputs for system design convenience. The dri |
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ON Semiconductor |
High Current IGBT/MOSFET Gate Drivers include accurate Under−voltage−lockout (UVLO), desaturation protection (DESAT) and Active open−drain FAULT output. The drivers also feature an accurate 5.0 V output. The drivers are designed to accommodate a wide voltage range of bias supplies. NCx57 |
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ON Semiconductor |
Gate Driver IGBT • High Peak Output Current (+7A/−7 A) • Low Output Impedance for Enhanced IGBT Driving • Short Propagation Delays with Accurate Matching • IGBT Over Current Protection • Negative Voltage (Down to −9 V) Capability for CS Pin • IGBT Gate Clamping durin |
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Siemens Semiconductor |
(SCD5580 - SCD5584) Serial Input Dot Addressable Intelligent Display • Eight 0.145" (3.68 mm) 5x5 dot matrix characters in red, yellow, high efficiency red, green, or high efficiency green • Optimum display surface efficiency (display area to package ratio) • Low power –30% less power dissipation than 5x7 format • High sp |
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Siemens Semiconductor |
(SCD5580 - SCD5584) Serial Input Dot Addressable Intelligent Display • Eight 0.145" (3.68 mm) 5x5 dot matrix characters in red, yellow, high efficiency red, green, or high efficiency green • Optimum display surface efficiency (display area to package ratio) • Low power –30% less power dissipation than 5x7 format • High sp |
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Siemens Semiconductor |
(SCD5580 - SCD5584) Serial Input Dot Addressable Intelligent Display • Eight 0.145" (3.68 mm) 5x5 dot matrix characters in red, yellow, high efficiency red, green, or high efficiency green • Optimum display surface efficiency (display area to package ratio) • Low power –30% less power dissipation than 5x7 format • High sp |
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Siemens Semiconductor |
(SCD5580 - SCD5584) Serial Input Dot Addressable Intelligent Display • Eight 0.145" (3.68 mm) 5x5 dot matrix characters in red, yellow, high efficiency red, green, or high efficiency green • Optimum display surface efficiency (display area to package ratio) • Low power –30% less power dissipation than 5x7 format • High sp |
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Toshiba Semiconductor |
TMP92CD54IF 8bit(for external I/O expansion) * Can’t use upper address bus when built-in I/Os are selected Memory controller (MEMC) Chip select output : 1 channel 8-bit timer : 8 channels 8-bit interval timer mode (8 channels) 16-bit interval timer mode (4 chann |
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Samsung semiconductor |
512Mb B-die DDR2 SDRAM Speed CAS Latency tRCD(min) tRP(min) tRC(min) DDR2-533 4-4-4 4 15 15 55 DDR2-400 3-3-3 3 15 15 55 Units tCK ns ns ns • JEDEC standard 1.8V ± 0.1V Power Supply • VDDQ = 1.8V ± 0.1V • 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/ pin • 4 Ba |
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Fairchild Semiconductor |
N-Channel SuperFET MOSFET 600V, 4.6A, typ. Rds(on)=860mΩ@VGS=10V Ultra Low Gate Charge (Typ. Qg = 16 nC) UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive On Board Charger Automotive DC/DC Converter for HEV Description SuperFETTM is Fai |
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