ON Semiconductor C12 fiche technique

No.	Partie #	Fabricant	Description
1	C1226	Panasonic Semiconductor	Silicon NPN Power Transistors voltage 2SC1226 V(BR)CBO Collector-base breakdown voltage 2SC1226A 2SC1226 V(BR)CEO Collector-emitter breakdown voltage 2SC1226A ICBO ICEO IEBO hFE COB fT Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Out
2	DTC123JE	Taiwan Semiconductor	NPN Small Signal Transistor - Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor (see equivalent circuit). - The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of th
3	LPC1225	NXP Semiconductors	32-bit ARM Cortex-M0 microcontroller a Windowed Watchdog Timer, a DMA controller, a CRC engine, four general purpose timers, a 32-bit RTC, a 1 % internal oscillator for baud rate generation, and up to 55 General Purpose I/O (GPIO) pins. 2. Features and benefits  Processor core  ARM C
4	MAC12MG	ON Semiconductor	Triacs • Blocking Voltage to 800 Volts • On−State Current Rating of 12 Amperes RMS at 70°C • Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3 • High Immunity to dv/dt − 250 V/ms Minimum at 125°C • High Commutating di/dt − 6.5 A/ms Minimum at
5	TIC126M	Inchange Semiconductor	Thyristors M= 12A 1.4 V IGT Gate-trigger current VAA=6V; RL=100Ω 20 mA VGT Gate-trigger voltage VAA=6V; RL=100Ω 1.5 V IH Holding current VAA=6V; RGK=1kΩ,IT=100mA 40 mA isc website：www.iscsemi.cn 1 isc&iscsemi is registered trademark isc Thyristor
6	CAT24C128	ON Semiconductor	128kb I2C CMOS Serial EEPROM a 64−byte page write buffer and supports both the Standard (100 kHz), Fast (400 kHz) and Fast−Plus (1 MHz) I2C protocol. Write operations can be inhibited by taking the WP pin High (this protects the entire memory). On−Chip ECC (Error Correction Code
7	2SC1212A	Hitachi Semiconductor	Silicon NPN Transistor IC = 0 VCB = 50 V, IE = 0 VCE = 4 V, IC = 50 mA VCE = 4 V, IC = 1 A (pulse test) VCE = 4 V, IC = 50 mA I C = 1 A, IB = 0.1 A (pulse test) VCE = 4 V, IC = 30 mA Min 50 50 4 — 60 20 — — — Typ — — — — — — 0.65 0.75 160 DC current tarnsfer ratio hFE*
8	CAT24C128	Catalyst Semiconductor	128-Kb I2C CMOS Serial EEPROM 128-Kb I2C CMOS Serial EEPROM DEVICE DESCRIPTION The CAT24C128 is a 128-Kb Serial CMOS EEPROM, internally organized as 256 pages of 64 bytes each, for a total of 16,384 bytes of 8 bits each. It features a 64-byte page write buffer and supports both
9	QP27C128	QP Semiconductor	128 Kilobit (16K x 8) CMOS EPROM fast single address location programming. The QP27C128 meets the same specification requirements and utilizes the same programming methodology as the AMD 27C128 that it replaces. Products are available in windowed and non-windowed (OTP) ceramic herme
10	2SC1213AK	Hitachi Semiconductor	Silicon NPN Transistor ctor to emitter saturation voltage Base to emitter satruation voltage Collector output capacitance Gain bandwidth product Turn on time Turn off time Storage time VBE VCE(sat) VBE(sat) Cob fT t on t off t stg 60 10 V V V pF MHz µS µS µS VCE = 3 V,
11	DAC1285A	National Semiconductor	12-Bit Digital-to-Analog Converters N The DAC1285 series is a family of precision, low cost, fully (3 self-contained digital-to-analog converters. The devices « include 12 precision current switches, a 12-bit thin film c resistor network, output amplifier, buffered internal • Comple
12	C1215	Panasonic Semiconductor	Silicon NPN Transistor q High transition frequency fT. 13.5±0.5 / s Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit e e) Collector to base voltage VCBO 30 V c e. d typ Collector to emitter voltage VCEO 20 V n d stag tinue Emitter to base vol
13	C122B	Digitron Semiconductors	SILICON CONTROLLED RECTIFIERS  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Characteristics C122F C12
14	2SC1212	Hitachi Semiconductor	Silicon NPN Transistor IC = 0 VCB = 50 V, IE = 0 VCE = 4 V, IC = 50 mA VCE = 4 V, IC = 1 A (pulse test) VCE = 4 V, IC = 50 mA I C = 1 A, IB = 0.1 A (pulse test) VCE = 4 V, IC = 30 mA Min 50 50 4 — 60 20 — — — Typ — — — — — — 0.65 0.75 160 DC current tarnsfer ratio hFE*
15	2SC1213	Hitachi Semiconductor	Silicon NPN Transistor E = 0 VCE = 3 V, IC =10 mA VCE = 3 V, I C = 500 mA2 I C = 150 mA, I B = 15 mA2 VCE = 3 V, IC = 10 mA Typ — — — — — — 0.2 0.64 35 35 4 — 60 10 — — DC current tarnsfer ratio hFE* hFE Collector to emitter saturation voltage VCE(sat) Base to emitt
16	HD74HC123A	Hitachi Semiconductor	Dual Retriggerable Monostable Multivibrators both a negative, A, and a positive, B, transition triggered input, either of which can be used as an inhibit input. Also included is a clear input that when taken low resets the one shot. The HD74HC123A can be triggered on the positive transition of
17	ADC12H030	National Semiconductor	Self-Calibrating 12-Bit Plus Sign Serial I/O A/D Converters Serial I/O (MICROWIRE Compatible) 2, 4, or 8 channel differential or single-ended multiplexer Analog input sample/hold function Power down mode Variable resolution and conversion rate Programmable acquisition time Variable digital output word length
18	HMS87C1202A	Hynix Semiconductor	8-BIT SINGLE-CHIP MICROCONTROLLERS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Development Tools . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Ordering I
19	QEC123	Fairchild Semiconductor	PLASTIC INFRARED LIGHT EMITTING DIODE • D= 880 nm • Chip material = AlGaAs • Package type: T-1 (3mm lens diameter) • Matched Photosensor: QSC112/113/114 • Narrow Emission Angle, 16° • High Output Power • Package material and color: Clear, purple tinted, plastic  2001 Fairchild Semicond
20	M74HC125	Fairchild Semiconductor	3-STATE Quad Buffers s Typical propagation delay: 13 ns s Wide operating voltage range: 2 –6V s Low input current: 1 µA maximum s Low quiescent current: 80 µA maximum (74HC) s Fanout of 15 LS-TTL loads Ordering Code: Order Number MM74HC125M MM74HC125SJ MM74HC125MTC MM74H