| No. | Partie # | Fabricant | Description | Fiche Technique |
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Taiwan Semiconductor |
NPN Transistor - For switching and AF amplifier applications - These types are subdivided into three groups A, B and C according to their current gain - Moisture sensitivity level 1 - Driver transistor - Pb free and RoHS compliant - Green compound (Halogen free) wi |
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Central Semiconductor |
SILICON NPN TRANSISTORS ) VBE(SAT) VBE(ON) VBE(ON) hFE hFE hFE hFE hFE hFE hFE hFE hfe fT Cob Cib NF VCB=30V VCB=30V, TA=150°C IC=10mA, IB=0.5mA IC=100mA, IB=5.0mA IC=10mA, IB=0.5mA IC=100mA, IB=5.0mA VCE=5.0V, IC=2.0mA 580 VCE=5.0V, IC=10mA VCE=5.0V, IC=10μA (BC5 |
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Fairchild Semiconductor |
NPN Transistor A = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max BC547 / A / B / C 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W © 1997 Fairchil |
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ON Semiconductor |
Amplifier Transistors • Pb−Free Packages are Available* DATA SHEET www.onsemi.com COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Collector - Emitter Voltage Symbol Value Unit VCEO Vdc BC546 65 BC547 45 BC548 30 Collector - Base Voltage VCBO Vdc BC546 |
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Taiwan Semiconductor |
NPN Transistor - For switching and AF amplifier applications - These types are subdivided into three groups A, B and C according to their current gain - Moisture sensitivity level 1 - Driver transistor - Pb free and RoHS compliant - Green compound (Halogen free) wi |
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Fairchild Semiconductor |
NPN Amplifier • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560 1 TO-92 1. Collector 2. Base 3. Emitter Ordering Information Part Number BC546ABU BC546ATA BC546BTA BC546BT |
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Fairchild Semiconductor |
NPN Transistor A = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max BC547 / A / B / C 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W © 1997 Fairchil |
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ON Semiconductor |
PNP Epitaxial Silicon Transistor • Switching and Amplifier • High−Voltage: BC556, VCEO = −65 V • Low−Noise: BC559, BC560 • Complement to BC546, BC547, BC548, BC549, and BC550 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25 |
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ON Semiconductor |
PNP Epitaxial Silicon Transistor • Switching and Amplifier • High−Voltage: BC556, VCEO = −65 V • Low−Noise: BC559, BC560 • Complement to BC546, BC547, BC548, BC549, and BC550 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25 |
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ON Semiconductor |
Amplifier Transistors • Pb−Free Packages are Available* DATA SHEET www.onsemi.com COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Collector - Emitter Voltage Symbol Value Unit VCEO Vdc BC546 65 BC547 45 BC548 30 Collector - Base Voltage VCBO Vdc BC546 |
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Central Semiconductor |
SILICON NPN TRANSISTORS ) VBE(SAT) VBE(ON) VBE(ON) hFE hFE hFE hFE hFE hFE hFE hFE hfe fT Cob Cib NF VCB=30V VCB=30V, TA=150°C IC=10mA, IB=0.5mA IC=100mA, IB=5.0mA IC=10mA, IB=0.5mA IC=100mA, IB=5.0mA VCE=5.0V, IC=2.0mA 580 VCE=5.0V, IC=10mA VCE=5.0V, IC=10μA (BC5 |
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ON Semiconductor |
NPN Epitaxial Silicon Transistor |
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ON Semiconductor |
NPN Epitaxial Silicon Transistor |
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ON Semiconductor |
NPN Epitaxial Silicon Transistor |
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Fairchild Semiconductor |
NPN Transistor • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560 1 TO-92 1. Collector 2. Base 3. Emitter Ordering Information Part Number BC546ABU BC546ATA BC546BTA BC546BT |
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Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor • Switching and Amplifier • High-Voltage: BC556, VCEO = -65 V • Low-Noise: BC559, BC560 • Complement to BC546, BC547, BC548, BC549, and BC550 123 Straight Lead Bulk Packing TO-92 1. Collector 12 3 2. Base 3. Emitter Bent Lead Tape & Reel Ammo P |
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NXP Semiconductors |
60V 1A PNP medium power transistors and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capab |
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Hitachi Semiconductor |
Octal Buffers/Line Drivers With 3 State Outputs |
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Siemens Semiconductor Group |
PNP Silicon Darlington Transistor base breakdown voltage IC = 100 µA Emitter-base breakdown voltage IE = 10 µA Collector cutoff current VCB = 30 V VCB = 30 V, TA = 150 ˚C Emitter cutoff current VEB = 4 V DC current gain IC = 20 mA; VCE = 2 V Collector-emitter saturation voltage1) IC |
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ON Semiconductor |
Amplifier Transistors • Pb−Free Packages are Available* DATA SHEET www.onsemi.com COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Collector - Emitter Voltage Symbol Value Unit VCEO Vdc BC546 65 BC547 45 BC548 30 Collector - Base Voltage VCBO Vdc BC546 |
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