| No. | Partie # | Fabricant | Description | Fiche Technique |
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General Semiconductor |
Small Signal Diodes ♦ Silicon Epitaxial Planar Diodes ♦ For general purpose ♦ These diodes are also available in other max. ∅.079 (2.0) Cathode Mark min. 1.083 (27.5) case styles including: the SOD-123 case with the type designation BAV19W - BAV21W, the MiniMELF case |
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Fairchild Semiconductor |
Small Signal Diode cs TA=25°C unless otherwise noted Symbol VR VF IR CT trr Parameter Breakdown Voltage Forward Voltage BAV70 BAV74 BAV70 Reverse Leakage BAV74 BAV70 Total Capacitance Reverse Recovery Time BAV74 BAV70 BAV74 BAV70 BAV74 Test Conditions IR = 100µ |
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General Semiconductor |
Small Signal Diodes ♦ Silicon Epitaxial Planar Diodes ♦ For general purpose ∅ .063 (1.6) .055 (1.4) Cathode Mark ♦ These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21, the SOD-123 case with the type |
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Taiwan Semiconductor |
225mW SMD Switching Diode 225mW SMD Switching Diode - Fast switching speed - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on pac |
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Fairchild Semiconductor |
High Voltage / General Purpose Diode nt DC Forward Current Recurrent Peak Forward Current Non-repetitive Peak Forward Current Pulse Width = 1.0 s Pulse Width = 1.0 μs 200 V 200 mA 500 mA 600 mA 1.0 A 4.0 A TSTG TJ Storage Temperature Range Operating Junction Temperature -65 to +200 |
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General Semiconductor |
SMALL SIGNAL DIODES ♦ Silicon Epitaxial Planar Diodes ♦ For general purpose ♦ These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21, the Mini-MELF case with the type designations BAV100 to BAV103, the SO |
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ON Semiconductor |
200mA 70V High Conductance Ultra-Fast Switching Diode • High Conductance: IF = 200 mA • Fast Switching Speed: trr < 6 ns Maximum • Small Plastic SOT-23 Package • Series-Pair Configuration Applications • High-Speed Switching Applications 3 1 SOT-23 2 Description The BAV99 is a 350 mW high-speed switc |
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ON Semiconductor |
Dual Switching Diode • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Max 70 200 500 Unit Vdc mAdc mAdc 3 ANODE CATHODE 1 2 CATHODE THERMAL CHARACTERI |
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ON Semiconductor |
Dual Switching Diode Common Cathode • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (TA = 25°C) Rating |
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Fairchild Semiconductor |
General Purpose Diodes pation Derate above 25°C Thermal Resistance, Junction to Ambient Max BAV19 / 20 / 21 500 3.33 300 Units mW mW/°C °C/W 2000 Fairchild Semiconductor International BAV19/20/21, Rev. A BAV19 / BAV20 / BAV21 High Voltage General Purpose Diode (cont |
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General Semiconductor |
SMALL SIGNAL DIODES ♦ Silicon Epitaxial Planar Diodes ♦ For general purpose ♦ These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21, the Mini-MELF case with the type designations BAV100 to BAV103, the SO |
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Fairchild Semiconductor |
General Purpose Diodes pation Derate above 25°C Thermal Resistance, Junction to Ambient Max BAV19 / 20 / 21 500 3.33 300 Units mW mW/°C °C/W 2000 Fairchild Semiconductor International BAV19/20/21, Rev. A BAV19 / BAV20 / BAV21 High Voltage General Purpose Diode (cont |
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General Semiconductor |
Small Signal Diodes ♦ Silicon Epitaxial Planar Diodes ♦ For general purpose ♦ These diodes are also available in other max. ∅.079 (2.0) Cathode Mark min. 1.083 (27.5) case styles including: the SOD-123 case with the type designation BAV19W - BAV21W, the MiniMELF case |
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ON Semiconductor |
Dual Series Switching Diode • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (Each Diode) Ratin |
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ON Semiconductor |
Dual Switching Diode Common Cathode • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (EACH DIODE) Ratin |
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ON Semiconductor |
Dual Series Switching Diode • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (Each Diode) Ratin |
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ON Semiconductor |
Dual Switching Diode • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C) Rati |
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ON Semiconductor |
Dual High Voltage Common Cathode Switching Diode • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: Class 2 ESD Rating − Machine Model: Class C • Fast Switching Speed • Switching Application • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Re |
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Taiwan Semiconductor |
200mW High Voltage SMD Switching Diode ● Low power loss, high efficiency ● Ideal for automated placement ● High surge current capability ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● Lighting applicatio |
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Taiwan Semiconductor |
High Voltage Switching Diode - Fast switching device (trr<4.0ns) - Through-hole device type mounting - Hermetically sealed glasss - Solder hot dip tin (Sn) lead finish - All external surfaces are corrosion resistant and leads are readily solderable - Packing code with suffix "G" |
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