| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Power Semiconductors |
RECTIFIER DIODE I² t V V r FM F(TO) F SWITCHING t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current 150 µs µC A MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance, DC Thermal impedance Operating junction temperature Mount |
|
|
|
|
Power Semiconductors |
RECTIFIER DIODE t V V r FM F(TO) F SWITCHING t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current 175 µs µC A MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance, DC Thermal impedance Operating junction temperature Mounting |
|
|
|
|
Power Semiconductors |
RECTIFIER DIODE V r FM F(TO) F SWITCHING t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current 175 µs µC A MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance, DC Thermal impedance Operating junction temperature Mounting for |
|
|
|
|
Fairchild Semiconductor |
2-Bit Voltage Translator / Isolator Bi-Directional Interface between Any Two Levels: 1.65V to 5.5V No Direction Control Needed Internal 10K Pull-Up Resistors System GPIO Resources Not Required when OE Tied to VCCA I2C-Bus® Isolation A/B Port VOL = 175mV (Typical), VIL = 150 |
|
|
|
|
ON Semiconductor |
1/1.8-inch 20-MP CMOS Digital Image Sensor onsemi’s breakthrough low−noise CMOS imaging technology. The AR2020 sensor can generate full resolution image at up to 60 frames per second (fps) in 10−bit linear mode. AR2020 can achieve 30 fps in line interleaved high dynamic range (LI−HDR) and enh |
|
|
|
|
Oki Semiconductor |
Voice Analysis Tools 10, MSM9888L, MSM9836, MSM9841, MSM9842, MSM9844 Note: The * mark indicates a device under development. FUNCTIONS Sampling frequency Input Output ROM writer Editing software Voice 4.0, 5.3, 6.4, 8.0, 10.6, 12.8, 16.0, 21.3, 25.6, 32.0 kHz WAVE FILE |
|
|
|
|
Taiwan Semiconductor |
High Current Button Rectifiers - Diffused junction - Low leakage - High surge capability - Low cost construction utilizing void-free molded plastic technique - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 de |
|
|
|
|
Power Semiconductors |
RECTIFIER DIODE M I² t V V r FM F(TO) F SWITCHING t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current 175 µs µC A MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance, DC Thermal impedance Operating junction temperature Mou |
|
|
|
|
EIC discrete Semiconductors |
AUTOMOTIVE RECTIFIER DIODES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop AUTOMOTIVE RECTIFIER DIODES AR - L 0.053 (1.35) 0.050 (1.27) 0.250 (6.4) 0.235 (6.0) 0.410 (10.4) 0.380 (9.7) 1.00 (25 |
|
|
|
|
EIC discrete Semiconductors |
AUTOMOTIVE RECTIFIER DIODES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop AUTOMOTIVE RECTIFIER DIODES 5° NOM 0.410 (10.4) 0.380 (9.70) MECHANICAL DATA : * * * * * * Case : Molded plastic Epoxy |
|
|
|
|
EIC discrete Semiconductors |
AUTOMOTIVE RECTIFIER DIODES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop AUTOMOTIVE RECTIFIER DIODES AR - L 0.053 (1.35) 0.050 (1.27) 0.250 (6.4) 0.235 (6.0) 0.410 (10.4) 0.380 (9.7) 1.00 (25 |
|
|
|
|
EIC discrete Semiconductors |
AUTOMOTIVE RECTIFIER DIODES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop AUTOMOTIVE RECTIFIER DIODES 5° NOM 0.410 (10.4) 0.380 (9.70) MECHANICAL DATA : * * * * * * Case : Molded plastic Epoxy |
|
|
|
|
EIC discrete Semiconductors |
AUTOMOTIVE RECTIFIER DIODES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop AUTOMOTIVE RECTIFIER DIODES AR - L 0.053 (1.35) 0.050 (1.27) 0.250 (6.4) 0.235 (6.0) 0.410 (10.4) 0.380 (9.7) 1.00 (25 |
|
|
|
|
EIC discrete Semiconductors |
AUTOMOTIVE RECTIFIER DIODES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop AUTOMOTIVE RECTIFIER DIODES 5° NOM 0.410 (10.4) 0.380 (9.70) MECHANICAL DATA : * * * * * * Case : Molded plastic Epoxy |
|
|
|
|
EIC discrete Semiconductors |
AUTOMOTIVE RECTIFIER DIODES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop AUTOMOTIVE RECTIFIER DIODES AR - L 0.053 (1.35) 0.050 (1.27) 0.250 (6.4) 0.235 (6.0) 0.410 (10.4) 0.380 (9.7) 1.00 (25 |
|
|
|
|
EIC discrete Semiconductors |
AUTOMOTIVE RECTIFIER DIODES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop AUTOMOTIVE RECTIFIER DIODES 5° NOM 0.410 (10.4) 0.380 (9.70) MECHANICAL DATA : * * * * * * Case : Molded plastic Epoxy |
|
|
|
|
EIC discrete Semiconductors |
AUTOMOTIVE RECTIFIER DIODES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop AUTOMOTIVE RECTIFIER DIODES AR - L 0.053 (1.35) 0.050 (1.27) 0.250 (6.4) 0.235 (6.0) 0.410 (10.4) 0.380 (9.7) 1.00 (25 |
|
|
|
|
EIC discrete Semiconductors |
AUTOMOTIVE RECTIFIER DIODES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop AUTOMOTIVE RECTIFIER DIODES 5° NOM 0.410 (10.4) 0.380 (9.70) MECHANICAL DATA : * * * * * * Case : Molded plastic Epoxy |
|
|
|
|
EIC discrete Semiconductors |
AUTOMOTIVE RECTIFIER DIODES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop AUTOMOTIVE RECTIFIER DIODES AR - L 0.053 (1.35) 0.050 (1.27) 0.250 (6.4) 0.235 (6.0) 0.410 (10.4) 0.380 (9.7) 1.00 (25 |
|
|
|
|
Hynix Semiconductor |
32Kx8bit CMOS SRAM The Fully static operation and HY62256A/HY62256A-I Tri-state outputs is a high-speed, low TTL compatible inputs power and 32,786 x 8-bits and outputs CMOS Static Random Low power consumption Access Memory -2.0V(min.) data fabricated using retention H |
|