ON Semiconductor A22 fiche technique

No.	Partie #	Fabricant	Description
1	A2232	AiT Semiconductor	3W STEREO WITH ADVANCED DC VOLUME CONTROL  Advanced DC Volume Control With 2-dB Steps, From -40 dB to 20 dB -Fade Mode -Maximum Volume Setting for SE Mode -Adjustable SE Volume Control      Referenced to BTL Volume Control 3 W Into 3Ω Speakers Stereo Input MUX Differential Inputs Avail
2	KA22471	Samsung semiconductor	LINEAR INTEGRATED CIRCUIT
3	FQA22P10	Fairchild Semiconductor	100V P-Channel MOSFET • • • • • • • -24A, -100V, RDS(on) = 0.125Ω @VGS = -10 V Low gate charge ( typical 40 nC) Low Crss ( typical 160 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G TO-3P G DS FQA Series
4	A2222	ON Semiconductor	Bipolar Transistor • Adoption of MBIT process • Large current capacity (IC=--10A) • Low collector-to-emitter saturation voltage (VCE(sat)=--250mV(typ.)) • High-speed switching (tf=22ns(typ.)) Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Collector-
5	HA22033	Hitachi Semiconductor	GaAs MMIC Low Noise Amplifier for Micro Wave Application • • • • • • Suitable for low noise amplifier of Micro Wave Application(1.5 to 1.9GHz) Low voltage and low current operation (2.7V, 1.7mA typ.) Low noise (1.4 dB typ. @1.5GHz) High power gain (14 dB typ. @1.5GHz) Built –in matching circuits (50Ω) Small
6	FSA2271T	Fairchild Semiconductor	Dual-SPDT Analog Switch  0.4Ω Typical On Resistance for +3.0V Supply  0.25Ω Maximum RON Flatness for +3.0V Supply  -3db Bandwidth: > 50MHz  Low ICCT Current Over Expanded Control Input Range  Packaged in 10-Lead UMLP  Power-off Protection on Common Ports  Broad VCC O
7	TGA2239	TriQuint Semiconductor	35W GaN Power Amplifier  Frequency Range: 13 – 15.5 GHz  PSAT: >45.5 dBm @ PIN = 21 dBm  PAE: >32% @ PIN = 21 dBm  Large Signal Gain: >24.5 dB  Small Signal Gain: 29.5 dB  Bias: VD = 22 V, IDQ = 900 mA, VG = -2.7 V Typical  Process Technology GaN-TQGaN15  Chip Dimen
8	QPA2237	TriQuint Semiconductor	10W GaN Power Amplifier  Frequency Range: 0.03 – 2.5 GHz  PSAT: >40 dBm at PIN = 27 dBm  PAE: >48%  Large Signal Gain: >13 dB  Small Signal Gain: >18.5 dB  Input Return Loss: >9 dB  Output Return Loss: >9.5 dB  Bias: VD = 32 V, IDQ = 360 mA, VG = -2.1 V Typical  Wi
9	LA2231M	Sanyo Semiconductor	RDS Signal Demodulator
10	KA22901	Samsung Semiconductor	AM/FM TUNER + MPX ð&+ 287 ìê $) %8))(5 $0î)î( 3+$6( '(7(&725 26& 67(5(2 '(&2'(5 /$03 75,*(5 $0î)0ý'(7 )0î)î( $& $) ,) $) ,) )) /('ý'5,9(5 ì )0ý5)ý,1 ë 1' ê )0ý0,; é $0ý0,; è $& ç 9&& æ $0ý,) å )0ý,) ä 1' ìí 781,1 /(' ìì 67/(' ìë 48$' '(7 ý)LJX
11	A2212	AiT Semiconductor	1.2 WATT AUDIO POWER AMPLIFIER The A2212 is a Class-AB audio power amplifier designed for mobile phones and other portable communication devices. It is capable of delivering  Improved PSRR at 217 Hz 70dB  Power output at 5.0V, 1% THD+N, 8Ω: 1.2W (typ.) 1.2 watts of continuous
12	HA22022	Hitachi Semiconductor	GaAs MMIC Low Noise Amplifier • • • • • • Suitable for low noise amplifier of Micro Wave Application(1.5 to 1.9GHz) Low voltage and low current operation (3V, 3mA typ.) Low noise (1.3 dB typ. @1.5Ghz) High power gain (16 dB typ. @1.5GHz) Built –in matching circuits (50Ω) Small sur
13	TGA2237	TriQuint Semiconductor	10W GaN Power Amplifier  Frequency Range: 0.03 – 2.5GHz  PSAT: 40dBm at PIN = 27dBm  P1dB: >32dBm  PAE: >52%  Large Signal Gain: 13dB  Small Signal Gain: 19dB  IM3 @ 120mA POUT< 33dBm/tone: -30dBc  IM5 @ 120mA POUT< 33dBm/tone: -30dBc  Bias: VD = 30V, IDQ = 360mA,
14	TGA2237-SM	TriQuint Semiconductor	10W GaN Power Amplifier  Frequency Range: 0.03 – 2.5GHz  PSAT: >40dBm at PIN = 27dBm  P1dB: >33dBm  PAE: >50%  Large Signal Gain: >13dB  Small Signal Gain: >19dB  Input Return Loss: >10dB  Output Return Loss: >12dB  Bias: VD = 32V, IDQ = 360mA, VG = -2.6V Typical 
15	HA22039	Hitachi Semiconductor	GaAs IC Low Distortion Mixer for Micro Wave Application • • • • Suitable for low distortion of Micro Wave Application Low voltage and low current operation (3V, 7mA typ.) Low insertion loss (1.0 dB typ. @800MHz) Small surface mount package (MPAK –6) Outline MPAK—6 This Device si sensitive to Electro Stat
16	GMA2288C	Fairchild Semiconductor	2.3 INCH (58.S mm) 8 X 8 DOT MATRIX STICK DISPLAY A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com
17	SA22	General Semiconductor	TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR 0.034 (0.86) 1.0 (25.4) MIN. 0.028 (0.71) DIA. 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) DIA. 1.0 (25.4) MIN. ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Glass passivated junction ♦ 500W peak pulse powe
18	LA2231	Sanyo Semiconductor	RDS Signal Demodulator
19	A2222	AiT Semiconductor	DUAL 2.2W PLUS STEREO HEADPHONE AUDIO POWER AMPLIFIER an externally controlled, low-power consumption shutdown mode, a stereo headphone amplifier mode, and thermal shutdown protection. It also utilizes circuitry to reduce “clicks and pops” during device turn-on. The A2222 is available in SOP16 package.
20	A2210	AiT Semiconductor	1.27W MONO CLASS AB AUDIO POWER AMPLIFIERS  PSRR @fIN = 217Hz, VDD = 5V 62dB(typ.)  Power Output @VDD = 5V&1% THD RL = 8Ω 1.27W(typ.)  Power Output @VDD =3V&1% THD RL = 8Ω 400mW(typ.)  Power Output @VDD = 5V&1% THD RL = 4Ω 2W(typ.)  Shutdown Current: 0.1μA(typ.)  2.2V ~ 5.5V operation 