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Fairchild Semiconductor |
2SJ6812 ation Voltage Base-Emitter Saturation Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=500µA, IC=0 VCE=5V, IC=1A VCE=5V, IC=8A IC=8A, IB=2A IC=8A, IB=2A VCC=200V, IC=7A, RL=30Ω IB1= 1.4A, IB2= - 2.8A 6 10 |
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Hitachi Semiconductor |
2SJ114 |
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Hitachi Semiconductor |
P-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SJ181(L), 2SJ181(S) Absolut |
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Hitachi Semiconductor |
P-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SJ181(L), 2SJ181(S) Absolut |
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Hitachi Semiconductor |
Silicon P-Channel MOS FET • • • • Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline TO-220AB D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain S 2SJ76, 2SJ77, 2SJ78, 2SJ79 Absolute Maximum Ratings (Ta = 25° |
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Hitachi Semiconductor |
P-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SJ181(L), 2SJ181(S) Absolut |
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Toshiba Semiconductor |
P-Channel MOSFET lease design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc |
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Toshiba Semiconductor |
Silicon P-Channel MOSFET oduct to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semic |
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Hitachi Semiconductor |
Silicon P-Channel MOSFET • Low on-resistance R DS(on) = 0.16 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline TO –220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SJ539 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source vo |
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Toshiba Semiconductor |
P-Channel MOSFET = 0, IG = 100 mA VDS = -10 V, VGS = 0 VDS = -10 V, ID = -0.1 mA VDS = -10 V, VGS = 0, f = 1 kHz VDS = -10 mV, VGS = 0, IDSS = -5 mA VDS = -10 V, VGS = 0, f = 1 MHz VDG = -10 V, ID = 0, f = 1 MHz Min ¾ 50 -1.2 0.3 1.0 ¾ ¾ ¾ Typ. ¾ ¾ ¾ ¾ 4.0 270 18 3.6 |
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Hitachi Semiconductor |
P-Channel MOSFET • • • • • • • Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier 2SJ160, 2SJ161, 2SJ162 Outline |
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Hitachi Semiconductor |
P-Channel MOSFET • • • • • • • Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier 2SJ160, 2SJ161, 2SJ162 Outline |
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Hitachi Semiconductor |
P-Channel MOSFET • Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = –10V, ID = –5A) • Low drive current • High speed switching • 4V gate drive devices. Outline DPAK –2 4 D 4 1 2 G 3 1 2 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ506(L), 2SJ506(S) Absolute |
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Hitachi Semiconductor |
SILICON P-CHANNEL MOS FET |
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Hitachi Semiconductor |
Silicon P-Channel MOS FET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 www.DataSheet4U.com 2SJ181( |
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Toshiba Semiconductor |
2SJ516 under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperat |
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Toshiba Semiconductor |
2SJ377 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-7J1B Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e. |
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Panasonic Semiconductor |
P-Channel MOSFET 1 Silicon MOS FETs (Small Signal) PD Ta 200 –120 2SJ0536 ID VDS 60 | Yfs | VGS Forward transfer admittance |Yfs| (mS) Ta=25˚C VDS= –5V 50 Allowable power dissipation PD (mW) 160 –100 Drain current ID (mA) –80 VGS= –5.5V –60 –5.0V –4.5V – |
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Toshiba Semiconductor |
P-Channel MOSFET en if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions” |
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Toshiba Semiconductor |
P-Channel MOSFET eviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-09-29 Electrical Characteristics (T |
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