| No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba Semiconductor |
Silicon NPN Transistor nd the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please de |
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Toshiba Semiconductor |
Silicon NPN Transistor (2SC2383) in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliabili |
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Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
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Toshiba Semiconductor |
2SC2482 |
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Mitsubishi Electric Semiconductor |
2SC1972 |
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Sanyo Semiconductor Corporation |
2SC3552 · High breakdown voltage and high reliability. · Fast switching speed (tf : 0.1µs typ). · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3552] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-B |
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Toshiba Semiconductor |
NPN TRANSISTOR solute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report a |
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Mitsubishi Electric Semiconductor |
2SC2630 |
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Inchange Semiconductor |
2SC2026 2V; IC= 0 0.1 μA hFE DC Current Gain IC= 10mA ; VCE= 10V 25 200 fT Current-Gain—Bandwidth Product IC= 10mA ; VCE= 10V 15 2.0 GHz COB Output Capacitance IE= 0 ; VCB= 10V; f= 1.0MHz 0.75 1.1 pF Gpe Power Gain VCE= 10 V,IC= 10mA; |
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Toshiba Semiconductor |
2SC2068 . High Voltage : VCE0=300V . Small Collector Output Capacitance : C ob=4.0pF (Max. MAXIMUM RATINGS (Ta=25°C; CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissip |
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Sanyo Semiconductor Corporation |
2SC4458 · High breakdown voltage, high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. www.DataSheet4U.com · Micaless package facilitating mounting. Package Dimensions unit:mm 2039D [2SC4458] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 |
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Inchange Semiconductor |
Silicon NPN Transistor O(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7.2A; IB= 1.44A VBE(sat) Base-Emitter Saturation Voltage IC= 7.2A; IB= 1.44A ICBO Collector Cutoff Current VCB=800V; IE= 0 ICES Col |
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Toshiba Semiconductor |
2SC2235 iate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-21 Fre |
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Inchange Semiconductor |
2SC5803 IC= 8A; IB= 2A B 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 2A B 1.5 V ICES Collector Cutoff Current VCE= 1400V; VBE= 0 1.0 mA ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= |
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Toshiba Semiconductor |
NPN TRANSISTOR Time Storage Time Fall Time ICBO IEBO V (BR) CEO hFE (1) hFE (2) hFE (3) VCE (sat) VBE (sat) fT Cob tstg (1) tf (1) tstg (2) tf (2) VCB = 1500 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 2 A VCE = 5 V, IC = 7 A VCE = 5 V, IC = 1 |
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Toshiba Semiconductor |
2SC5171 eliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-10 Free Datashe |
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Toshiba Semiconductor |
2SC5197 IC = 6 A, IB = 0.6 A VBE VCE = 5 V, IC = 4 A fT VCE = 5 V, IC = 1 A Cob VCB = 10 V, IE = 0, f = 1 MHz Note: hFE (1) classification R: 55 to 110, O: 80 to 160 JEDEC ― JEITA ― TOSHIBA 2-16C1A Weight: 4.7 g (typ.) Min Typ. Max Unit ― ― 5.0 µA |
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Toshiba Semiconductor |
2SC1923 A (Note) Cre fT Cc･rbb’ NF Gpe VCE = 6 V, f = 1 MHz VCE = 6 V, IC = 1 mA VCE = 6 V, IE = -1 mA, f = 30 MHz VCE = 6 V, IE = -1 mA, f = 100 MHz, Figure 1 Note: hFE classification R: 40~80, O: 70~140, Y: 100~200 (* NF = 5.0dB max) Min Typ. Max Unit |
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Toshiba Semiconductor |
2SC2705 aximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estim |
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Toshiba Semiconductor |
2SC5149 |
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