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ON Semiconductor |
NPN Transistor • Pb−Free Packages are Available* DATA SHEET www.onsemi.com COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Devi |
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Fairchild Semiconductor |
NPN Amplifier |
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Inchange Semiconductor |
Silicon NPN Power Transistor fied SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=200mA ; IB=0 VCER(SUS) Collector-Emitter Sustaining Voltage IC=200mA ; RBE=100Ω VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VCE(sat)-2 Colle |
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Central Semiconductor |
N-Channel FET |
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ON Semiconductor |
Complementary Silicon Power Transistors • DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc • Excellent Safe Operating Area • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emi |
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CENTRAL SEMICONDUCTOR |
COMPLEMENTARY SILICON POWER TRANSISTORS B=400mA VCE(SAT) IC=10A, IB=3.3A VBE(ON) VCE=4.0V, IC=4.0A hFE VCE=4.0V, IC=4.0A 20 hFE VCE=4.0V, IC=10A 5.0 hfe VCE=4.0V, IC=1.0A, f=1.0kHz 15 fT VCE=10V, IC=0.5A, f=1.0MHz 2.5 fhfe VCE=4.0V, IC=1.0A, f=1.0kHz 10 Is/b VCE=40V, t=1.0s |
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Fairchild Semiconductor |
PNP Transistor function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The ab |
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Central Semiconductor |
SILICON NPN TRANSISTORS 2N3716) 80 VCE(SAT) IC=5.0A, IB=0.5A (2N3713, 2N3714) VCE(SAT) IC=5.0A, IB=0.5A (2N3715, 2N3716) VBE(SAT) IC=5.0A, IB=0.5A (2N3713, 2N3714) VBE(SAT) IC=5.0A, IB=0.5A (2N3715, 2N3716) VBE(ON) VCE=2.0V, IC=3.0A hFE VCE=2.0V, IC=1.0A (2N3713, 2 |
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Comset Semiconductor |
NPN SILICON POWER TRANSISTORS 17/10/2012 COMSET SEMICONDUCTORS 1|3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN 2N3583 – 2N3584 – 2N3585 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICEO Ratings Test Condition(s) 2N3583 2N3584 2N3585 2N3583 2N3584 |
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Comset Semiconductor |
NPN Power Transistor eakdown collector current Test Condition(s) Min 140 15 5 1.5 Typ - Max 2 2 Unit V mA mA IC= 200 mA, IB = 0 VCE= 140 V, IB= 0 VCE= 140 V, VBE= -1.5V VCE= 140 V, VBE= -1.5V Tcase = 150°C VEB= 7 V, IC= 0 IC= 8 A, VCE= 4 V IC= 16 A, VCE= 4 V IC= 8 |
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Digitron Semiconductors |
SILICON CONTROLLED RECTIFIERS Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Characteristic Symbol 2N30 |
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Fairchild Semiconductor |
P-Channel General Purpose Amplifier 0 VDS = -10V, ID = -10µA VDS = -10V, VGS = 0 VDS = -10V, VGS = 0, f = 1.0KHz VDS = -10V, VGS = 0, f = 1.0KHz VDS = -10V, VGS = 0, f = 1.0KHz -0.3 800 Min. 20 20 8.0 -15 5000 32 16 Typ. Max. Units V nA V mA µmhos pF pF Gate-Source Breakdwon Voltage G |
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Fairchild Semiconductor |
PNP General Purpose Amplifier Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N3905 625 5.0 83.3 200 Units mW mW/ °C °C/W °C/W © 1997 Fairchild Semiconductor Corporation 2N3905 PNP General Purpose |
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Central Semiconductor |
N-Channel FET |
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Central Semiconductor |
PNP POWER TRANSISTORS |
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Central Semiconductor |
PNP POWER TRANSISTORS |
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Central Semiconductor |
PNP SILICON TRANSISTOR |
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Central Semiconductor |
SILICON NPN TRANSISTORS |
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ON Semiconductor |
JFET VHF/UHF Amplifier everse Current (VGS = 15 Vdc, VDS = 0) V(BR)GSS VGS VGS(off) IGSS 25 0.5 – – – – – – – 7.5 –ā8.0 210 Vdc Vdc Vdc nAdc ON CHARACTERISTICS Zero –Gate –Voltage Drain Current (VDS = 15 Vdc, VGS = 0) IDSS 2.0 – 20 mAdc SMALL –SIGNAL CHARACTERISTICS Forward |
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Central Semiconductor |
(2N3641 - 2N3643) NPN SILICON SIGNAL TRANSISTORS |
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