| No. | Partie # | Fabricant | Description | Fiche Technique |
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EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33 |
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EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33 |
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EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33 |
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National Semiconductor |
Diode Data |
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ON Semiconductor |
1500 Watt MosorbE Zener Transient Voltage Transient Voltage Cathode Anode • • • • • • • Working Peak Reverse Voltage Range – 5.8 V to 214 V Peak Power – 1500 Watts @ 1 ms ESD Rating of Class 3 (>16 KV) per Human Body Model Maximum Clamp Voltage @ Peak Pulse Current Low Leakage < 5 mA Above 10 V UL 497B f |
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EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33 |
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EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33 |
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Fairchild Semiconductor |
N-Channel MOSFET • 650V @Tj = 150°C • Typ. Rds(on)=0.32Ω • Ultra low gate charge (typ. Qg=40nC) • Low effective output capacitance (typ. Coss.eff=95pF) • 100% avalanche tested • RoHS Compliant D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unle |
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Fairchild Semiconductor |
N-Channel MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 36 mΩ • Ultra Low Gate Charge (Typ. Qg = 277 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 748 pF) • 100% Avalanche Tested • RoHS Compliant Description SuperFET® II MOSFET is Fairchild Semiconductor’ |
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Fairchild Semiconductor |
MOSFET • 700 V @ TJ = 150°C • Typ. RDS(on) = 36 mΩ • Ultra Low Gate Charge (Typ. Qg = 226 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 1278 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD / LED / PDP TV • Telecom / Server Power |
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Fairchild Semiconductor |
MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 36 mΩ • Ultra Low Gate Charge (Typ. Qg = 285 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 735 pF) • 100% Avalanche Tested • An Integrated Gate Resistor • RoHS Compliant Applications • LCD / LED / PDP |
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EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33 |
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EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33 |
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America Semiconductor |
Silicon Power Schottky Diode |
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SENSITRON SEMICONDUCTOR |
TRANSIENT VOLTAGE SUPPRESSOR BI-DIRECTIONAL DIODES |
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EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33 |
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EIC discrete Semiconductors |
TRANSIENT VOLTAGE SUPPRESSOR : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1µA above 10V TRANSIENT VOLTAGE SUPPRESSOR DO-201AD 0.21 (5.33 |
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Central Semiconductor |
SILICON ZENER DIODES |
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Fairchild Semiconductor |
600V N-Channel MOSFET • • • • • • 1.0A, 600V, RDS(on) = 11.5Ω @VGS = 10 V Low gate charge ( typical 5.0 nC) Low Crss ( typical 3.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D-PAK FQD Series I-PAK G D S FQU Series G! ! " " " ! |
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General Semiconductor |
Schottky Diodes • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling |
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