| No. | Partie # | Fabricant | Description | Fiche Technique |
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MMD Components |
Low Cost Industrial TCXO |
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Pacific Monolithics |
MMDS / ISM / S-Band Downconverter • • • • • • • 1800 to 4800 MHz RF 10 to 900 MHz IF 26 dB Gain, 4dB Noise Figure Single 5V Supply 27 dBm Output IP3 Separate RF AMP, MIXER/LO AMP and IF AMP cells. 75 ohm IF output impedance RF IN VDD LO IN IF OUT RF OUT IF/RF IF IN IF BIAS Appl |
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ETC |
SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODE PAIR (SERIES) |
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ON |
Power MOSFET s otherwise noted) (Notes 1. & 2.) Rating Drain –to –Source Voltage Drain –to –Gate Voltage (RGS = 1.0 MW) Gate –to –Source Voltage – Continuous Drain Current – Continuous @ TA = 25°C – Continuous @ TA = 100°C – Single Pulse (tp v 10 ms) Total Power Dissip |
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Pacific Monolithics |
MMDS / ISM / S-Band Mixer • • • • • • 10 dB Gain 10 to 900 MHz Integrated IF Amplifier Single 5V Supply 26 dBm Output IP3 Separate MIXER/LO AMP and IF AMP cells. 75 ohm IF output impedance VDD LO IN IF/RF IF OUT IF IN IF BIAS Applications • • • • 2.4 GHz ISM Band Applicat |
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MA-COM |
Silicon Step Recovery Diodes • Output Combs to 40+ GHz • Transition Times down to 35 ps • Screening per MIL-PRF-19500 and MIL-PRF- 38534 available Description The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead |
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Aeroflex |
Silicon Step Recovery Diodes • Output combs to 40+ GHz • Transition times down to 35 ps • Screening per MIL-PRF-19500 and MIL-PRF-38534 available Absolute Maximum Ratings (Chip and Beam Lead) Parameters Reverse Voltage Forward Current Power Dissipation Junction Temperature Sto |
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Motorola |
DUAL BIPOLAR POWER TRANSISTOR NPN SILICON 30 VOLTS 3 AMPERES ÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ |
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ON Semiconductor |
Power MOSFET • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Logic Level Gate Drive − Can Be Driven by Logic ICs • Miniature SO−8 Surface Mount Package − Saves Board Space • Diode Is Characterized for Use In Bridge Circuits • Diode Exhib |
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SEMTECH |
NPN Silicon Epitaxial Planar Transistor • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Vol |
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TriQuint Semiconductor |
10 Watt MMDS Packaged Amplifier • • • • • • • • TGA2923-SG 3.5 GHz Application Frequency Range 9 dB Nominal Gain 10 Watt Nominal Psat 2.5% EVM at 30 dBm output power IMD3 -45 dBc @ 28 dBm SCL, Typical Bias Conditions: 8 V @ 1.2 A (Quiescent) 0.5 µm HFET Technology 2 lead Cu-alloy |
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MMD Components |
Industry Standard Package ww.DataSheet.net/ 10.16 [.400] 6.10 [.240] 0.79 [.031] 7.11 [.280] 6.35 [.250] 2.54 [.100] 3 2 1 1.02 [.040] 1.27 [.050] 1.52 [.060] 2.54 [.100] RECOMMENDED LAND PATTERN 4 5 6 PIN PIN 1 PIN 2 PIN 3 PIN 4 PIN 5 PIN 6 CONNECTIONS NO CONNECTION TRI-S |
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TIPTEK |
MULTI-CHIP TRANSISTORS PNP Silicon ULTRA-SMALL SURFACE MOUNT PACKAGE EPITAXIAL PLANAR DIE CONSTRUCTION IDEAL FOR LOW POWER AMPLIFICATION AND SWITCHING ALSO AVAILABLE IN LEAD FREE VERSION PB FREE PRODUCT ARE AVAILABLE :98.5% SN ABOVE CAN MEET ROHSENVIRONMENT SUBSTANCE DIRECTI |
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Zetex Semiconductors |
SOT23 SILICON PLANAR HIGH SPEED SWITCHING COMMON CATHODE DIODE PAIR 0.15 0.10 2.50 Inches Min 0.105 0.047 0.0145 0.0033 0.0004 0.0825 Max 0.120 0.055 0.043 0.021 0.0059 0.004 0.0985 1 3 2 B C D F G K L N NOM 1.9 NOM 0.075 NOM 0.95 NOM 0.37 Package Details Zetex plc. Fields New Road, Chadderton, Oldham, OL9 |
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MA-COM |
Silicon Step Recovery Diodes • Output Combs to 40+ GHz • Transition Times down to 35 ps • Screening per MIL-PRF-19500 and MIL-PRF- 38534 available Description The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead |
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MA-COM |
Silicon Step Recovery Diodes • Output Combs to 40+ GHz • Transition Times down to 35 ps • Screening per MIL-PRF-19500 and MIL-PRF- 38534 available Description The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead |
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MA-COM |
Silicon Step Recovery Diodes • Output Combs to 40+ GHz • Transition Times down to 35 ps • Screening per MIL-PRF-19500 and MIL-PRF- 38534 available Description The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead |
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Aeroflex |
Silicon Step Recovery Diodes • Output combs to 40+ GHz • Transition times down to 35 ps • Screening per MIL-PRF-19500 and MIL-PRF-38534 available Absolute Maximum Ratings (Chip and Beam Lead) Parameters Reverse Voltage Forward Current Power Dissipation Junction Temperature Sto |
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Aeroflex |
Silicon Step Recovery Diodes • Output combs to 40+ GHz • Transition times down to 35 ps • Screening per MIL-PRF-19500 and MIL-PRF-38534 available Absolute Maximum Ratings (Chip and Beam Lead) Parameters Reverse Voltage Forward Current Power Dissipation Junction Temperature Sto |
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ON |
Power MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain –to –source diode has a very low reverse recovery time. MiniMOSt devices are designed for use in low v |
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