| No. | Partie # | Fabricant | Description | Fiche Technique |
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ON |
Amplifier Transistor • These are Pb−Free Devices* http://onsemi.com COLLECTOR 1 2 BASE Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 50 60 6.0 100 350 2.8 1.0 8.0 −55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C W mW/°C °C TO−92 CASE 29 STYLE 17 12 1 3 EMITTER MAXIMUM RATIN |
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ETC |
Silicon Planar PNP Transistor |
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ETC |
NPN Silicon Transistor |
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ETC |
Silicon NPN Transistor |
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Siemens |
Silicon NPN Transistor rranty / liability Siemens Transistor BC148 Datasheet Datasheet Rev. 1.3 – 02/19 – data without warranty / liability Siemens Transistor BC148 Datasheet Datasheet Rev. 1.3 – 02/19 – data without warranty / liability |
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STMicroelectronics |
LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS O Parameter Collector Cut-off Current (IE = 0) Test Cond ition s for BC107 V CB = 40 V V CB = 40 V for BC108 V CB = 20 V V CB = 20 V I C = 10 µ A for BC107 for BC108 I C = 10 mA for BC107 for BC108 I E = 10 µ A for BC107 for BC108 I C = 10 mA I C = 1 |
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Siemens Group |
npn silicon transistors |
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Central Semiconductor |
(BC107x - BC109x) Small Signal Transistors |
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Telefunken |
Silicon NPN Transistor |
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Telefunken |
Silicon NPN Transistor |
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SEMTECH |
NPN Silicon Epitaxial Planar Transistor |
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Micro Electronics |
PNP Silicon Transistor |
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ON |
Amplifier Transistor • These are Pb−Free Devices* http://onsemi.com COLLECTOR 1 2 BASE Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 50 60 6.0 100 350 2.8 1.0 8.0 −55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C W mW/°C °C TO−92 CASE 29 STYLE 17 12 1 3 EMITTER MAXIMUM RATIN |
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Central Semiconductor |
NPN SILICON TRANSISTOR C109) 5.0 VCE(SAT) IC=10mA, IB=0.5mA VCE(SAT) IC=100mA, IB=5.0mA VBE(SAT) IC=10mA, IB=0.5mA VBE(SAT) IC=100mA, IB=5.0mA VBE(ON) VCE=5.0V, IC=2.0mA 0.55 VBE(ON) VCE=5.0V, IC=10mA hFE VCE=5.0V, IC=10μA (BC107B, BC108B, BC109B) 40 hFE VCE=5. |
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STMicroelectronics |
Audio Output Amplifier |
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Comset Semiconductors |
(BC107 - BC109) Low noise general purpose audio amplifiers 8 BC109 Min - Typ - Max 15 Unit nA ICBO Collector Cutoff Current VCB = 20 V IE = 0 V Tj = 150°C VEB = 5 V IC = 0 IC = 10 mA IB = 0 IC = 10 µA VBE = 0 - - 15 µA IEBO Emitter Cutoff Current Collector-Emitter Breakdown Voltage Collector-Bas |
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NXP Semiconductors |
(BC140 / BC141) NPN medium power transistors • High current (max. 1 A) • Low voltage (max. 60 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN medium power transistor in a TO-39 metal package. PNP complements: BC160 and BC161. 3 BC140; BC141 PINNING PIN 1 2 3 emi |
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CDIL |
NPN Silicon Transistor |
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Siemens Group |
PNP Silicon Transistor |
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Central Semiconductor |
NPN SILICON TRANSISTOR C109) 5.0 VCE(SAT) IC=10mA, IB=0.5mA VCE(SAT) IC=100mA, IB=5.0mA VBE(SAT) IC=10mA, IB=0.5mA VBE(SAT) IC=100mA, IB=5.0mA VBE(ON) VCE=5.0V, IC=2.0mA 0.55 VBE(ON) VCE=5.0V, IC=10mA hFE VCE=5.0V, IC=10μA (BC107B, BC108B, BC109B) 40 hFE VCE=5. |
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