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Fairchild |
High Conductance Ultra Fast Diode t Conditions VR Breakdown Voltage VF Forward Voltage IR Reverse Current CT Total Capacitance trr Reverse Recovery Time IR = 5.0 µA IF = 1.0 mA IF = 10 mA IF = 50 mA IF = 150 mA VR = 70 V VR = 25 V, TA = 150°C VR = 70 V, TA = 150°C VR = 0, f = 1.0 M |
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Leshan Radio Company |
Monolithic Dual Switching Diode • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBAW56LT1G S-LBAW56LT1G 3 ORD |
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ON Semiconductor |
Dual Switching Diode Common Anode • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (EACH DIODE) Rat |
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Leshan Radio Company |
Monolithic Dual Switching Diode • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBAW56LT1G S-LBAW56LT1G 3 ORD |
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Kexin |
Silicon Switching Diode Array Electrically insulated high-voltage medium-speed diodes Diodes Unit: mm A bsolute M axim um R atings T a = 25 Param eter R everse voltage P eak reverse voltage Forward current Peak forward current Surge forward current, t = 1 s Total power dissipa |
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BLUE ROCKET ELECTRONICS |
Silicon Diode ，，，， 450mA。 Small package, double diode, high switching speed, high repetitive peak reverse voltage, repetitive peak forward current up to 450mA. / Applications 。 High-speed switching in thick and thin-film circuits.. / Equivalent Circuit / P |
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Siemens Group |
Silicon Switching Diode V, TA = 150 ˚C AC characteristics Diode capacitance VR = 0, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA Test circuit for reverse recovery time CD trr – – 6 1 – – pF µs Values typ. max. Unit V(BR) VF IR |
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SPANSION |
S71PL032J40BAWOK |
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TriQuint Semiconductor |
1227 MHz BAW GPS Filter • • • • • • For GPS applications Usable bandwidth of 30 MHz Single-ended operation Ceramic Surface Mount Package This part number is a replacement for part number CRF-1227-4 Hermetic Part Number 880272 1227 MHz BAW Filter Package Surface Mount 3.26 |
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TriQuint Semiconductor |
1380 MHz GPS L3/L4 BAW Filter • • • • • For GPS L3/4 applications Usable bandwidth of 30 MHz Single-ended operation Ceramic Surface Mount Package Hermetic Part Number 880365 1380 MHz BAW Filter Package Surface Mount 3.26 x 1.60 x 0.84 mm Pin Configuration Bottom View www.Data |
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Grayhill |
PIEZO Pushbutton Switches • Fully Sealed • Virtually Indestructible • Vandal Resistant • Indoor and Outdoor Use DIMENSIONS In inches (and millimeters) Ø 1.102 Non-Illuminated (Ø 28,00) Single Button MA1 .748 (19,00) Illuminated Single Button .443 (11,25) ML1 .276 (7,00) |
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TriQuint Semiconductor |
Band 7 BAW Duplexer 70 MHz Bandwidth High Attenuation Low Loss No External Matching Required Small Size: 2.0 x 2.5 x 1.0 mm Surface Mount Device RoHS Compliant, Pb-Free 9 Pin 2 x 2.5 mm leadless SMT Package Functional Block Diagram Top View General Descr |
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LITE-ON |
SURFACE MOUNT FAST SWITCHING DIODE • Fast switching speed • Ideally suited for automatic insertion • For general purpose switching applications MECHANICAL DATA • Case: SOT-323 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI) • Mo |
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WEITRON |
Surface Mount Switching Multi-Chip Diode Array * For General Purpose Switching Applications * Fast Switching Speed * High Conductance * Easily Connected As Full Wave Bridge Mechanical Data: * Case : SOT-363 * Case Material : Molded Plastic. UL Flammability Classification Ration 94V-0 * Moisture |
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LITE-ON |
SURFACE MOUNT FAST SWITCHING DIODE • Fast Switching Speed • Ideally Suited for Automatic Insertion • For general purpose switching applications MECHANICAL DATA • Case: SOT-23 Plastic • Case Material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI) • Moi |
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Infineon Technologies AG |
Silicon Switching Diode |
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Infineon Technologies AG |
Silicon Switching Diode ameter Junction - soldering point1) BAW56 BAW56S BAW56U BAW56W Ptot Tj Tstg Symbol RthJS 330 250 250 250 150 -65 ... 150 Value 360 260 240 190 1For calculation of RthJA please refer to Application Note Thermal Resistance Unit V mA A mW °C Unit K/ |
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Siemens Group |
Silicon Switching Diode Array t IR 2.5 30 50 µA VR = 70 V, TA = 25 °C VR = 25 V, TA = 150 °C VR = 70 V, TA = 150 °C AC characteristics per Diode Diode capacitance CD 2 pF ns 6 VR = 0 V, f = 1 MHz Reverse recovery time trr IF = 10 mA, IR = 10 mA, RL = 100 Ω trr measured at |
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ON |
Dual Switching Diode • Pb−Free Package is Available http://onsemi.com CATHODE 1 2 CATHODE Symbol VR IF IFM(surge) Max 70 200 500 Unit V mA mA 3 1 ANODE 3 MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltage Forward Current Peak Forward Surge Current MARKING DIAGRAM S |
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Siemens Group |
Silicon Switching Diodes (Switching applications High breakdown voltage) ymbol min. DC characteristics Breakdown voltage I(BR) = 100 µA BAW 78 A BAW 78 B BAW 78 C BAW 78 D Forward voltage1) IF = 1 A IF = 2 A Reverse current VR = VRmax VR = VRmax, TA = 150 ˚C AC characteristics Diode capacitance VR = 0, f = 1 MHz Reverse r |
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