| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Numonyx |
256 Mbit Flash memory 128 Mbit (burst) PSRAM ■ Multichip package – 1 die of 256 Mbit (16 Mb x 16, multiple bank, multilevel, burst) Flash memory – 1 die of 128 Mbit (8 Mb x16) PSRAM Supply voltage – VDDF = VCCP = VDDQ = 1.7 to 1.95 V – VPPF = 9 V for fast program (12 V tolerant) Electronic sig |
|
|
|
|
Numonyx |
512 Mbit Flash memory 64 Mbit (Burst) PSRAM – Partial Array Self-Refresh (PASR) – Deep Power-Down (DPD) Mode – Automatic Temperature-compensated SelfRefresh PSRAM ■ Programming time – 4.2µs typical Word program time using Buffer Enhanced Factory Program command www.DataSheet4U.com ■ ■ ■ ■ |
|
|
|
|
Numonyx |
512 Mbit Flash memory 64 Mbit (Burst) PSRAM – Partial Array Self-Refresh (PASR) – Deep Power-Down (DPD) mode – Automatic Temperature-compensated SelfRefresh ■ Flash memory ■ ■ ■ PSRAM ■ ■ Programming time – 4.2µs typical Word program time using www.DataSheet4U.com Buffer Enhanced Factory |
|
|
|
|
Numonyx |
512 Mbit Flash memory 128 Mbit (Burst) PSRAM – Partial Array Self Refresh (PASR) – Deep Power-Down (DPD) Mode Programming time – 4.2µs typical Word program time using Buffer Enhanced Factory Program www.DataSheet4U.com command ■ ■ ■ Memory organization – Multiple bank memory array: 64 Mbit b |
|
|
|
|
Numonyx |
(M36L0T7050T2 / M36L0T7050B2) 128 Mbit Flash memory and 32 Mbit PSRAM summary ■ Multi-Chip Package – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 32 Mbit (2Mb x16) Pseudo SRAM Supply voltage – VDDF = 1.7 to 1.95V – VCCP = VDDQ = 2.7 to 3.1V – VPPF = 9V for fast program Electro |
|
|
|
|
Numonyx |
(M36L0T7050T2 / M36L0T7050B2) 128 Mbit Flash memory and 32 Mbit PSRAM summary ■ Multi-Chip Package – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 32 Mbit (2Mb x16) Pseudo SRAM Supply voltage – VDDF = 1.7 to 1.95V – VCCP = VDDQ = 2.7 to 3.1V – VPPF = 9V for fast program Electro |
|