No. | Partie # | Fabricant | Description | Fiche Technique |
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Nihon Inter Electronics |
MOSFET MODULE Single 560A/150V * Trench Gate MOS FET Module Single 560A /150V OUTLINE DRAWING PHM5601 * Super Low Rds(ON) 2 milliohms( @560A ) * With Fast Recovery Source-Drain Diode Circuit TYPICAL APPLICATIONS * Chopper Control For FORKLIFTs MAXMUM RATINGS Ratings Drain-So |
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Nihon Inter Electronics |
MOSFET MODULE Single 900A/150A * Trench Gate MOS FET Module Single 800A /150V OUTLINE DRAWING PHM8001 * Super Low Rds(ON) 1.4 milliohms( @800A ) * With Fast Recovery Source-Drain Diode Circuit TYPICAL APPLICATIONS * Chopper Control For FORKLIFTs MAXMUM RATINGS Ratings Drain- |
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Nihon Inter Electronics |
IGBT MODULE A VCE=10V,VGE=0V,f=1MHz VCC= 300V RL= 0.375 ohm RG= 0.6 ohm VGE= +/- 15V Min. 4.0 - Typ. 2.1 80,000 0.25 0.45 0.2 0.6 Max. 8.0 1.0 2.6 8.0 0.45 0.85 0.35 0.8 Unit mA µA V V pF µs ww.DataSheet4U.com FREE WHEELING DIODES RATINGS & CHARACTERISTICS |
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Nihon Inter Electronics |
IGBT MODULE VGE=+/- 20V,VCE=0V IC=1200A,VGE=15V VCE=5V,IC=400mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 0.5 ohm RG= 0.33 ohm VGE= +/- 15V Min. 4.0 - Typ. 1.9 100000 0.25 0.40 0.25 1.00 Max. 24 1.0 2.4 8.0 0.45 0.70 0.35 1.50 Unit mA µA V V pF µs ww.DataSheet4U. |
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Nihon Inter Electronics |
IGBT rent IGES VGE= ±20V,VCE= 0V - - 1.0 μA コレクタ ・エミッタ Collector-Emitter Saturation Voltage VCE(sat) IC= 400A,VGE= 15V - 2.1 2.6 V ゲ ー ト しきい Gate-Emitter Threshold Voltage VGE(th) VCE= 5V,IC= 400mA 4.0 - 8.0 V Input Capacitance Cies VCE= |
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Nihon Inter Electronics |
IGBT 6 3(30 6) □ : ELECTRICAL CHARACTERISTICS (TC=25℃) Characteristic Symbol Test Condition Min. Typ. Max. Unit コレクタ Collector-Emitter Cut-Off Current ICES VCE= 600V, VGE= 0V - - 1.0 mA ゲートれ Gate-Emitter Leakage Current IGES VGE= ±20V,VCE= |
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Nihon Inter Electronics |
IGBT 1.2 VCC=600V RG=5.1( VGE=±15V TC=25°C Resistive Load Switching Time t (µs) 0.8 tf 0.4 0 0 50 100 150 200 Collector Current IC (A) tON tr(VCE) 250 300 Switching Time t (µs) 5 VCC=600V 3 IC=300A VGE=±15V TC=25°C Resistive Load 1 toff 0.3 ton t |
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Nihon Inter Electronics |
IGBT MODULE V,IC=600mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 1.0 ohm RG= 1.0 ohm VGE= +/- 15V Min. 4.0 - Typ. 1.9 33000 0.25 0.40 0.25 0.80 Max. 12.0 1.0 2.4 8.0 0.45 0.70 0.35 1.10 Unit mA µA V V pF µs ww.DataSheet4U.com FREE WHEELING DIODES RATINGS & CHARA |
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Nihon Inter Electronics |
IGBT MODULE A VCE=10V,VGE=0V,f=1MHz VCC= 300V RL= 0.5 ohm RG= 1.0 ohm VGE= +/- 15V Min. 4.0 - Typ. 2.1 60,000 0.25 0.45 0.2 0.6 Max. 6.0 1.0 2.6 8.0 0.45 0.85 0.35 0.8 Unit mA µA V V pF µs ww.DataSheet4U.com FREE WHEELING DIODES RATINGS & CHARACTERISTICS ( |
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Nihon Inter Electronics |
IGBT MODULE =400mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 1.5 ohm RG= 1.0 ohm VGE= +/- 15V Min. 4.0 - Typ. 1.9 33000 0.25 0.40 0.25 0.80 Max. 8.0 1.0 2.4 8.0 0.45 0.70 0.35 1.10 Unit mA µA V V pF µs ww.DataSheet4U.com FREE WHEELING DIODES RATINGS & CHARACTERI |
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Nihon Inter Electronics |
IGBT MODULE VCE=10V,VGE=0V,f=1MHz VCC= 300V RL= 0.75 ohm RG= 1.6 ohm VGE= +/- 15V Min. 4.0 - Typ. 2.1 40,000 0.25 0.45 0.2 0.6 Max. 4.0 1.0 2.6 8.0 0.45 0.85 0.35 0.8 Unit mA µA V V pF µs FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol |
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Nihon Inter Electronics |
IGBT MODULE =300mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 2 ohm RG= 1.3 ohm VGE= +/- 15V Min. 4.0 - Typ. 1.9 25000 0.25 0.40 0.25 0.80 Max. 6.0 1.0 2.4 8.0 0.45 0.70 0.35 1.10 Unit mA µA V V pF µs ww.DataSheet4U.com FREE WHEELING DIODES RATINGS & CHARACTERIST |
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Nihon Inter Electronics |
IGBT MODULE VCE=10V,VGE=0V,f=1MHz VCC= 300V RL= 1 ohm RG= 2 ohm VGE= +/- 15V Min. 4.0 - Typ. 2.1 30,000 0.2 0.4 0.2 0.6 Max. 3.0 1.0 2.6 8.0 0.4 0.75 0.35 0.8 Unit mA µA V V pF µs FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Va |
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Nihon Inter Electronics |
IGBT MODULE CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value Forward Current DC 1 ms IF IFM 200 400 Unit A Typ. 1.9 0.2 ww.DataSheet4U.com Characteristic Peak Forward Voltage Reverse Recovery Time Symbol VF trr Test Condition IF=200A,VGE=0V IF=200A,VGE=-10 |
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Nihon Inter Electronics |
IGBT urrent IGES VGE= ±20V,VCE= 0V - - 1.0 μA コレクタ ・エミッタ Collector-Emitter Saturation Voltage VCE(sat) IC= 300A,VGE= 15V - 2.1 2.6 V ゲ ー ト しきい Gate-Emitter Threshold Voltage VGE(th) VCE= 5V,IC= 300mA 4.0 - 8.0 V Input Capacitance Cies VC |
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Nihon Inter Electronics |
IGBT 6 3(30 6) □ : ELECTRICAL CHARACTERISTICS (TC=25℃) Characteristic Symbol Test Condition Min. Typ. Max. Unit コレクタ Collector-Emitter Cut-Off Current ICES VCE= 600V, VGE= 0V - - 1.0 mA ゲートれ Gate-Emitter Leakage Current IGES VGE= ±20V,VCE= |
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Nihon Inter Electronics |
IGBT E= 0V IGES VGE= ±20V,VCE= 0V Min. - Typ. - Max. Unit 1.0 mA - - 1.0 μA コレクタ ・エミッタ Collector-Emitter Saturation Voltage VCE(sat) IC= 800A,VGE= 15V - 2.1 2.6 V ゲ ー ト しきい Gate-Emitter Threshold Voltage VGE(th) VCE= 5V,IC= 800mA 4.0 - 8 |
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Nihon Inter Electronics |
IGBT Voltage VCE (V) 2 1.6 tOFF 1.2 VCC=600V RG=7.5( VGE=±15V TC=25°C Resistive Load Switching Time t (µs) 0.8 tf 0.4 0 0 50 100 150 Collector Current IC (A) tON tr(VCE) 200 Switching Time t (µs) 10 VCC=600V IC=200A VGE=±15V 3 TC=25°C Resistive Lo |
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Nihon Inter Electronics |
IGBT - - 1.0 μA コレクタ ・エミッタ Collector-Emitter Saturation Voltage VCE(sat) IC= 400A,VGE= 15V - 2.3 2.7 V ゲ ー ト しきい Gate-Emitter Threshold Voltage VGE(th) VCE= 5V,IC= 400mA 4.0 - 8.0 V Input Capacitance Cies VCE= 10V,VGE= 0V,f= 1MHZ - 25,200 - |
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Nihon Inter Electronics |
IGBT 1 4(14 3) (kgf・cm) M6 3(30 6) □ : ELECTRICAL CHARACTERISTICS (TC=25℃) Characteristic Symbol Test Condition Min. Typ. Max. Unit コレクタ Collector-Emitter Cut-Off Current ICES VCE= 1200V,VGE= 0V - - .0 mA ゲートれ Gate-Emitter Leakage Current |
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