National Semiconductor TMS fiche technique

No.	Partie #	Fabricant	Description
1	TMS417409A	National Semiconductor	4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES maximum RAS access times of 50, 60, and 70 ns. All address and data-in lines are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility. POWER SUPPLY 5V 5V 3.3 V 3.3 V SELF REFRESH, BATTERY BACKUP – – –
2	TMS427409A	National Semiconductor	4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES maximum RAS access times of 50, 60, and 70 ns. All address and data-in lines are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility. POWER SUPPLY 5V 5V 3.3 V 3.3 V SELF REFRESH, BATTERY BACKUP – – –
3	TMS416409A	National Semiconductor	4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES maximum RAS access times of 50, 60, and 70 ns. All address and data-in lines are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility. POWER SUPPLY 5V 5V 3.3 V 3.3 V SELF REFRESH, BATTERY BACKUP – – –
4	TMS426409A	National Semiconductor	4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES maximum RAS access times of 50, 60, and 70 ns. All address and data-in lines are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility. POWER SUPPLY 5V 5V 3.3 V 3.3 V SELF REFRESH, BATTERY BACKUP – – –