National Semiconductor NPD fiche technique

No.	Partie #	Fabricant	Description
1	NPD5564	National Semiconductor	N-Channel Monolithic Dual JFET ed) Gate-Reverse Current CONDITIONS V G S--20V,V DS = bvgss VGS(OFF) VGS(f) Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Voltage Saturation Drain Current Static Drain Source "ON" Resistance Common-Source Forward Transcondu
2	NPD5566	National Semiconductor	N-Channel Monolithic Dual JFET ed) Gate-Reverse Current CONDITIONS V G S--20V,V DS = bvgss VGS(OFF) VGS(f) Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Voltage Saturation Drain Current Static Drain Source "ON" Resistance Common-Source Forward Transcondu
3	NPD8302	National Semiconductor	N-Channel Monolithic Dual JFET NS VDS = 0, V G S= -20V, (Note 1! VQS-20V, D l - 1 nA NPD8301 MIN TYP MAX -100 NPO8302 MIN TYP MAX -100 NPD8303 MIN TYP MAX -100 UNITS pA -0.5 -3.5 -0.5 -3.5 -0.5 -3.5 BVGSS Idss lG VGS Cjss c,„ en Gate-Source Breakdown vds = o. ig^-i ^ a
4	NPD8301	National Semiconductor	N-Channel Monolithic Dual JFET NS VDS = 0, V G S= -20V, (Note 1! VQS-20V, D l - 1 nA NPD8301 MIN TYP MAX -100 NPO8302 MIN TYP MAX -100 NPD8303 MIN TYP MAX -100 UNITS pA -0.5 -3.5 -0.5 -3.5 -0.5 -3.5 BVGSS Idss lG VGS Cjss c,„ en Gate-Source Breakdown vds = o. ig^-i ^ a
5	NPD5565	National Semiconductor	N-Channel Monolithic Dual JFET ed) Gate-Reverse Current CONDITIONS V G S--20V,V DS = bvgss VGS(OFF) VGS(f) Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Voltage Saturation Drain Current Static Drain Source "ON" Resistance Common-Source Forward Transcondu
6	NPD8303	National Semiconductor	N-Channel Monolithic Dual JFET NS VDS = 0, V G S= -20V, (Note 1! VQS-20V, D l - 1 nA NPD8301 MIN TYP MAX -100 NPO8302 MIN TYP MAX -100 NPD8303 MIN TYP MAX -100 UNITS pA -0.5 -3.5 -0.5 -3.5 -0.5 -3.5 BVGSS Idss lG VGS Cjss c,„ en Gate-Source Breakdown vds = o. ig^-i ^ a