No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
|
|
National |
Electrically Erasable Programmable Memories |
|
|
|
National Semiconductor |
High Performance CMOS PROM |
|
|
|
National Semiconductor |
EEPROM |
|
|
|
National Semiconductor |
EEPROM |
|
|
|
National Semiconductor |
EEPROM |
|
|
|
National Semiconductor |
EEPROM |
|
|
|
National |
256-Bit Serial Electrically Erasable Programmable Memory |
|
|
|
National Semiconductor |
One-Time Programmable CMOS PROM |
|
|
|
National Semiconductor |
4K-Bit Static RAM |
|
|
|
National Semiconductor |
65536-Bit (8192 x 8) CMOS EPROM Y High performance CMOS 150 ns access time Y JEDEC standard pin configuration 28-pin DIP package 32-pin chip carrier Y Drop-in replacement for 27C64 or 2764 Y Manufacturers identification code Block Diagram TRI-STATE is a registered trademark of Na |
|
|
|
National |
32768-Bit UV Eraseable CMOS PROM |
|
|
|
National |
32k-Bit (4k x 8) UV Erasable PROM |
|
|
|
National |
32k-Bit (4k x 8) UV Erasable PROM |
|
|
|
National |
32 /768-Bit (4096 x 8) CMOS EPROM Y Y Y Y Y Y Y Y Low CMOS power consumption Active Power 55 mW Max Standby Power 0 55 mW Max Extended temperature range b40 C to a 85 C Fast and reliable programming TTL CMOS compatible inputs outputs TRI-STATE output Manufacturer’s identification |
|
|
|
National |
256-Bit Serial Electrically Erasable Programmable Memory |
|
|
|
National |
1024 Bit Serial Electrically Erasable Programmable Memory |
|
|
|
National Semiconductor |
UV Eraseable CMOS PROM |
|
|
|
National Semiconductor |
UV Eraseable CMOS PROM |
|
|
|
National Semiconductor |
UV Eraseable CMOS PROM |
|
|
|
National Semiconductor |
UV Erasable CMOS PROM |
|