| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
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Naina Semiconductor |
Power Surge Suppressor • Glass passivated junction • Zener type suppressor • Superior clamping ability • Metric and UNF thread type Mechanical Characteristics • Hermetically sealed DO-9 outline • External surfaces corrosion resistant & terminal Solderable • Weight: 16 gram |
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Naina Semiconductor |
Power Surge Suppressor • Glass passivated junction • Zener type suppressor • Superior clamping ability • Metric and UNF thread type Mechanical Characteristics • Hermetically sealed DO-9 outline • External surfaces corrosion resistant & terminal Solderable • Weight: 16 gram |
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|
Naina Semiconductor |
Power Surge Suppressor • Glass passivated junction • Zener type suppressor • Superior clamping ability • Metric and UNF thread type Mechanical Characteristics • Hermetically sealed DO-9 outline • External surfaces corrosion resistant & terminal Solderable • Weight: 16 gram |
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|
|
|
Naina Semiconductor |
Power Surge Suppressor • Glass passivated junction • Zener type suppressor • Superior clamping ability • Metric and UNF thread type Mechanical Characteristics • Hermetically sealed DO-9 outline • External surfaces corrosion resistant & terminal Solderable • Weight: 16 gram |
|
|
|
|
Naina Semiconductor |
Power Surge Suppressor • Glass passivated junction • Zener type suppressor • Superior clamping ability • Metric and UNF thread type Mechanical Characteristics • Hermetically sealed DO-9 outline • External surfaces corrosion resistant & terminal Solderable • Weight: 16 gram |
|
|
|
|
Naina Semiconductor |
Power Surge Suppressor • Glass passivated junction • Zener type suppressor • Superior clamping ability • Metric and UNF thread type Mechanical Characteristics • Hermetically sealed DO-9 outline • External surfaces corrosion resistant & terminal Solderable • Weight: 16 gram |
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|
NAINA SEMICONDUCTOR |
SILICON POWER DIODE • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1250C Maximum peak forward voltage drop @ Rated I |
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NAINA SEMICONDUCTOR |
SILICON POWER DIODE • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1250C Maximum peak forward voltage drop @ Rated I |
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NAINA SEMICONDUCTOR |
SILICON POWER DIODE • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1500C Maximum peak forward voltage drop @ Rated I |
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Naina Semiconductor |
Standard Recovery Diodes • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type Electrical Specifications (TE = 250C, unless otherwise noted) Symbol Parameters Values Units IF(AV) Maximum avg. forward current @ TE = |
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|
Naina Semiconductor |
Standard Recovery Diodes • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type Electrical Specifications (TE = 250C, unless otherwise noted) Symbol Parameters Values Units IF(AV) Maximum avg. forward current @ TE = |
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|
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|
NAINA SEMICONDUCTOR |
SILICON POWER DIODE • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1250C Maximum peak forward voltage drop @ Rated I |
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|
|
NAINA SEMICONDUCTOR |
SILICON POWER DIODE • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1500C Maximum peak forward voltage drop @ Rated I |
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|
NAINA SEMICONDUCTOR |
SILICON POWER DIODE • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1500C Maximum peak forward voltage drop @ Rated I |
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|
NAINA SEMICONDUCTOR |
SILICON POWER DIODE • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1500C Maximum peak forward voltage drop @ Rated I |
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Naina Semiconductor |
Standard Recovery Diodes • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type 150 150NS(R) Standard andard Recovery Diodes (Stud and Flat Base Type) Electrical Specifications (TE = 250C, unless otherwise noted) Symbo |
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Naina Semiconductor |
Standard Recovery Diodes • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type 150 150NS(R) Standard andard Recovery Diodes (Stud and Flat Base Type) Electrical Specifications (TE = 250C, unless otherwise noted) Symbo |
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Naina Semiconductor |
Standard Recovery Diodes • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type Electrical Specifications (TE = 250C, unless otherwise noted) Symbol Parameters Values Units IF(AV) Maximum avg. forward current @ TE = |
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|
Naina Semiconductor |
Standard Recovery Diodes • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type Electrical Specifications (TE = 250C, unless otherwise noted) Symbol Parameters Values Units IF(AV) Maximum avg. forward current @ TE = |
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|
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|
Naina Semiconductor |
Standard Recovery Diodes • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type Electrical Specifications (TE = 250C, unless otherwise noted) Symbol Parameters Values Units IF(AV) Maximum avg. forward current @ TE = |
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