| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanyo |
2-Channel 12W AF Power Amplifier . Low pop noise at the time of power supply ON/OFF . Excellent oscillation stability SANYO : SIP18H Specifications Maximum Ratings at Ta = 25°C Parameter Maximum supply voltage Symbol VCC max1 VCC max2 VCC max3 Surge supply voltage Maximum output c |
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Sanyo |
12W AF Power Amplifier |
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Sanyo |
Dual Channel 12W min AF Power AMP. |
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Sanyo Denki |
DC Fan 02 109R0612H402 109R0624H402 109R0648H402 109R0605F402 109R0612F402 109R0624F402 109R0605M402 109R0612M402 109R0624M402 60mm 15mm 20mm 25mm 15mm 20mm 25mm Datasheet pdf - http://www.DataSheet4U.net/ |
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Sanyo |
12W AF Power Amplifier |
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Sanyo |
BTL-OCL 12W AF Power Amp |
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Numonyx |
NAND SLC small page 70 nm Discrete Density – 512 Mbit: 4096 blocks NAND Flash interface – x8 or x16 bus width – Multiplexed address/data Memory configuration – Page size: x8 device: (512 + 16 spare) Bytes x16 device: (256 + 8 spare) Words – Block size: x8 device: (16K + 512 spar |
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Sanyo |
BTL-OCL 12W AF Power Amp |
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Sanyo |
CD-ROM Error Correction LSI • Support for double-speed drives at an operating frequency of 16.9344 MHz Either SRAM (120 ns), DRAM (80 ns) or pseudo SRAM (85 ns) can be used. • Support for quad-speed drives at an operating frequency of 33.8688 MHz SRAM (70 ns) must be used. • Bu |
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Sanyo Semicon Device |
(LA4460N / LA4461N) 12W AF Power Amplifier • High gain of 51dB typ. and high power output of 12W typ. • Possible to delete output and bootstrap capacitors, this encourages cost and space reductions due to external parts reduction. • Reduced external components (8 pieces recommended, 6 pieces |
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Numonyx |
NAND Flash Memories ● High density NAND Flash memories – – 512 Mbit memory array Cost effective solutions for mass storage applications x 8 or x 16 bus width Multiplexed Address/ Data FBGA ● NAND interface – – TSOP48 12 x 20 mm ● ● Supply voltage: 1.8 V, 3.0 V Page |
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Numonyx |
SLC NAND flash memories High density SLC NAND flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface – x8 or x16 bus width – Multiplexed address/data Supply voltage: 1.8 V, 3 V Page size – x8 device: (512 + 16 |
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Numonyx |
SLC NAND flash memories High density SLC NAND flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface – x8 or x16 bus width – Multiplexed address/data Supply voltage: 1.8 V, 3 V Page size – x8 device: (512 + 16 |
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Sanyo Semicon Device |
Electronic Volume Controller • On-chip buffer amplifier cuts down number of external components • Low switching noise generated by on-chip switch through use of silicon gate CMOS process, for low switching noise when there is no signal • Low switching noise when there is a signa |
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Numonyx |
NAND SLC small page 70 nm Discrete Density – 512 Mbit: 4096 blocks NAND Flash interface – x8 or x16 bus width – Multiplexed address/data Memory configuration – Page size: x8 device: (512 + 16 spare) Bytes x16 device: (256 + 8 spare) Words – Block size: x8 device: (16K + 512 spar |
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Sanyo |
256 K (32768 words x 8 bits) SRAM |
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Sanyo |
256 K (32768 words x 8 bits) SRAM |
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Sanyo Semicon Device |
(LA4460N / LA4461N) 12W AF Power Amplifier • High gain of 51dB typ. and high power output of 12W typ. • Possible to delete output and bootstrap capacitors, this encourages cost and space reductions due to external parts reduction. • Reduced external components (8 pieces recommended, 6 pieces |
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Fujitsu |
(NY Series) Power Relay RoHS compliant l Ultra slim type with 5 mm thickness —Good for high density mounting l Low power consumption and high sensitivity —Nominal coil power: 120 mW —Operating power: 54 mW l UL, CSA, VDE recognized l Conforms to IEC 1010-1 and 1 |
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Numonyx |
NAND Flash Memories ● High density NAND Flash memories – – 512 Mbit memory array Cost effective solutions for mass storage applications x 8 or x 16 bus width Multiplexed Address/ Data FBGA ● NAND interface – – TSOP48 12 x 20 mm ● ● Supply voltage: 1.8 V, 3.0 V Page |
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