NXP Semiconductors PSM fiche technique

No.	Partie #	Fabricant	Description
1	PSMN1R0-30YLC	NXP Semiconductors	N-channel MOSFET and benefits  High reliability Power SO8 package, qualified to 175°C  Optimised for 4.5V Gate drive utilising NextPower Superjunction technology  Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads  Ultra low Rdson and
2	PSMN8R0-40PS	NXP Semiconductors	N-channel MOSFET and benefits High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources 1.3 Applications DC-to-DC convertors Load switching Motor control Server power supplies 1.4 Quick reference data Tabl
3	PSMN010-25YLC	NXP Semiconductors	MOSFET and benefits  High reliability Power SO8 package, qualified to 175°C  Low parasitic inductance and resistance  Optimised for 4.5V Gate drive utilising NextPower Superjunction technology  Ultra low QG, QGD, & QOSS for high system efficiencies at l
4	PSMN028-100YS	NXP Semiconductors	MOSFET and benefits Advanced TrenchMOS provides low RDSon and low gate charge High efficiency gains in switching power converters Improved mechanical and thermal characteristics LFPAK provides maximum power density in a Power SO8 package 1.3 Applic
5	PSMN3R0-30YL	NXP Semiconductors	MOSFET and benefits High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources 1.3 Applications Class-D amplifiers DC-to-DC converters Motor control Server power supplies 1.4 Quick reference data Tab
6	PSMN4R0-30YL	NXP Semiconductors	N-Channel MOSFET and benefits High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources 1.3 Applications Class-D amplifiers DC-to-DC converters Motor control Server power supplies 1.4 Quick reference data Tab
7	PSMN002-25B	NXP Semiconductors	N-Channel MOSFET s Low on-state resistance s Fast switching. 3. Applications s High frequency computer motherboard DC to DC converters s OR-ing applications. 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78 and SOT404, simpliﬁed outline and symbol Descr
8	PSMN003-30B	NXP Semiconductors	N-Channel MOSFET s Low on-state resistance s Fast switching. 3. Applications s High frequency computer motherboard DC to DC converters s OR-ing applications. 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78 and SOT404, simpliﬁed outline and symbol Descr
9	PSMN012-100YS	NXP Semiconductors	Standard Level MOSFET and benefits Advanced TrenchMOS provides low RDSon and low gate charge High efficiency gains in switching power converters Improved mechanical and thermal characteristics LFPAK provides maximum power density in a Power SO8 package 1.3 Applic
10	PSMN016-100PS	NXP Semiconductors	N-Channel MOSFET and benefits High efficiency due to low switching and conduction losses Suitable for standard level gate drive 1.3 Applications DC-to-DC converters Load switching Motor control Server power supplies 1.4 Quick reference data Table 1. VDS
11	PSMN5R0-80PS	NXP Semiconductors	N-channel MOSFET and benefits High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources 1.3 Applications DC-to-DC converters Load switching Motor control Server power supplies 1.4 Quick reference data Tabl
12	PSMN8R0-30YL	NXP Semiconductors	N-channel MOSFET and benefits High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources 1.3 Applications Class-D amplifiers DC-to-DC converters Motor control Server power supplies 1.4 Quick reference data Tab
13	PSMN8R0-30YLC	NXP Semiconductors	N-channel MOSFET and benefits  High reliability Power SO8 package, qualified to 175°C  Low parasitic inductance and resistance  Optimised for 4.5V Gate drive utilising NextPower Superjunction technology  Ultra low QG, QGD, QOSS for high system efficiencies at low
14	PSMN8R3-40YS	NXP Semiconductors	N-channel MOSFET and benefits Advanced TrenchMOS provides low RDSon and low gate charge High efficiency gains in switching power converters Improved mechanical and thermal characteristics LFPAK provides maximum power density in a Power SO8 package 1.3 Applic
15	PSMN1R1-25YLC	NXP Semiconductors	N-Channel MOSFET and benefits High reliability Power SO8 package, qualified to 175°C Optimised for 4.5V Gate drive utilising NextPower Superjunction technology Ultra low QG, QGD and QOSS for high system efficiencies at low and high loads Ultra low Rdson and l
16	PSMN026-80YS	NXP Semiconductors	MOSFET and benefits Advanced TrenchMOS provides low RDSon and low gate charge High efficiency gains in switching power converters Improved mechanical and thermal characteristics LFPAK provides maximum power density in a Power SO8 package 1.3 Applic
17	PSMN1R1-30EL	NXP Semiconductors	MOSFET and benefits • • High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources 3. Applications • • • • DC-to-DC converters Load switiching Motor control Server power supplies 4. Quick reference data Table 1.
18	PSMN2R0-30YLE	NXP Semiconductors	MOSFET and benefits • Enhanced forward biased safe operating area for superior linear mode operation • Very low Rdson for low conduction losses 1.3 Applications • Electronic fuse • Hot swap • Load switch • Soft start 1.4 Quick reference data Table 1. Symbol
19	PSMN013-30LL	NXP Semiconductors	MOSFET and benefits High efficiency due to low switching and conduction losses Small footprint for compact designs Suitable for logic level gate drive sources 1.3 Applications Battery protection DC-to-DC converters Load switching Power ORing
20	PSMN013-30MLC	NXP Semiconductors	MOSFET and benefits  Low parasitic inductance and resistance  Optimised for 4.5V Gate drive utilising NextPower Superjunction technology  Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads 1.3 Applications  DC-to-DC converters