NXP Semiconductors LTA fiche technique

No.	Partie #	Fabricant	Description
1	LTA803N	NXP Semiconductors	HV start-up DCM/QR flyback controller and benefits 2.1 Distinctive features  Integrated PFC and flyback controller  Universal mains supply operation (70 V (AC) to 276 V (AC))  Dual-boost PFC with accurate maximum output voltage (NXP patented)  High level of integration, resulting in
2	PBHV8115T	NXP Semiconductors	1A NPN high-voltage low VCEsat (BISS) transistor I I I I I I High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualiﬁed Small SMD plastic package 1.3 Applications I I I I I I www.DataSheet
3	PCAL6416A	NXP Semiconductors	Low-voltage translating 16-bit I2C-bus/SMBus I/O expander specifically designed to enhance the I/ O. These additional features are: programmable output drive strength, latchable inputs, programmable pull-up/pull-down resistors, maskable interrupt, interrupt status register, programmable open-drain or push-p
4	PBHV9215Z	NXP Semiconductors	2A PNP High-voltage Low VCEsat (BISS) Transistor High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualified Medium power SMD plastic package 1.3 Applications LED drive
5	DG7-31	NXP Semiconductors	LOW VOLTAGE CATHODE RAY TUBE
6	PBHV8540T	NXP Semiconductors	0.5A NPN high-voltage low VCEsat (BISS) transistor I I I I I High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualiﬁed 1.3 Applications I I I I I I I www.DataSheet4U.com Electronic ballast
7	PBHV8540Z	NXP Semiconductors	0.5A NPN high-voltage low VCEsat(BISS) transistor I I I I I High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualiﬁed 1.3 Applications I I I I I I I www.DataSheet4U.com Electronic ballast
8	PBHV9040T	NXP Semiconductors	0.25A PNP high-voltage low VCEsat (BISS) transistor I I I I I High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualiﬁed 1.3 Applications I I I I I I I www.DataSheet4U.com Electronic ballast
9	PCA9306	NXP Semiconductors	Dual bidirectional I2C-bus and SMBus voltage-level translator and benefits • 2-bit bidirectional translator for SDA and SCL lines in mixed-mode I2C-bus applications • Standard-mode, Fast-mode, and Fast-mode Plus I2C-bus and SMBus compatible NXP Semiconductors PCA9306 Dual bidirectional I2C-bus and SMBus volta
10	74LVCV2G66	NXP Semiconductors	Overvoltage tolerant bilateral switch s Wide supply voltage range from 2.3 V to 5.5 V s Ultra low-power operation s Very low ON-resistance: x 8.0 Ω (typ) at VCC = 2.7 V x 7.5 Ω (typ) at VCC = 3.3 V x 7.3 Ω (typ) at VCC = 5.0 V. s 5 V tolerant input for interfacing with 5 V logic s High n
11	BAS521	NXP Semiconductors	High voltage switching diode • High switching speed: max. 50 ns • High continuous reverse voltage: 300 V • Repetitive peak forward current: 625 mA • Ultra small plastic SMD package. APPLICATIONS • High speed switching • High voltage switching. DESCRIPTION The BAS521 is a high-vo
12	BAS21VD	NXP Semiconductors	High-voltage switching diode array and benefits • High switching speed: trr ≤ 50 ns • Low capacitance: Cd ≤ 5 pF • Reverse voltage: VR ≤ 200 V • AEC-Q101 qualified • Repetitive peak reverse voltage: VRRM ≤ 250 V • Repetitive peak forward current: IFRM ≤ 1 A • Small SMD plastic package
13	PVR100AZ-B12V	NXP Semiconductors	Voltage regulator I I I I Integrated Zener diode and bipolar transistor Output voltage options: 2.5 V, 3 V, 3.3 V, 5 V and 12 V Output power dissipation capability: 1.3 W Medium power Surface-Mounted Device (SMD) plastic package 1.3 Applications I Linear voltage regu
14	NCX2200	NXP Semiconductors	Low voltage comparator and benefits  Wide supply voltage range from 1.3 V to 5.5 V (functional operating range)  Rail-to-rail input/output performance  Very low supply current of 6 A (typical)  Very low-power consumption  No phase inversion with overdriven input sign
15	NVT2002	NXP Semiconductors	(NVT2001 / NVT2002) Bidirectional voltage level translator and benefits  Provides bidirectional voltage translation with no direction pin  Less than 1.5 ns maximum propagation delay  Allows voltage level translation between:  1.0 V Vref(A) and 1.8 V, 2.5 V, 3.3 V or 5 V Vref(B)  1.2 V Vref(A) and 1.8 V,
16	NX3V1G66	NXP Semiconductors	Low-voltage analog switch and benefits  Wide supply voltage range from 1.4 V to 4.3 V  Very low ON resistance (peak):  0.8  (typical) at VCC = 1.4 V  0.5  (typical) at VCC = 1.65 V  0.3  (typical) at VCC = 2.3 V  0.25  (typical) at VCC = 2.7 V  0.25  (typical) at
17	NX3V1T66	NXP Semiconductors	Low-voltage analog switch I Wide supply voltage range from 1.4 V to 3.6 V I Very low ON resistance (peak): N 0.8 Ω (typical) at VCC = 1.4 V N 0.5 Ω (typical) at VCC = 1.65 V N 0.3 Ω (typical) at VCC = 2.3 V N 0.25 Ω (typical) at VCC = 2.7 V I High noise immunity I ESD protect
18	PBHV8115Z	NXP Semiconductors	1A NPN high-voltage low VCEsat (BISS) transistor I I I I I I High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualiﬁed Medium power SMD plastic package 1.3 Applications I I I I I I www.Da
19	PBHV9050T	NXP Semiconductors	150mA PNP high-voltage low VCEsat (BISS) transistor I I I I I High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualiﬁed 1.3 Applications I I I I I I I www.DataSheet4U.com Electronic ballast
20	SA58640	NXP Semiconductors	Low-voltage mixer FM-IF and benefits Low power consumption: 5.0 mA typical at 5 V Mixer input to >100 MHz Mixer conversion power gain of 17 dB at 45 MHz Crystal oscillator effective to 100 MHz (LC oscillator or external oscillator can be used at higher frequencies)