| No. | Partie # | Fabricant | Description | Fiche Technique |
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NXP Semiconductors |
Dual N-channel dual gate MOSFET s Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with partly integrated bias s Internal switch to save external components s Superior cross-modulation performance during AGC s High forward transf |
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NXP Semiconductors |
Dual N-channel dual gate MOSFET I Two low noise gain controlled amplifiers in a single package; both with a partly integrated bias I Superior cross modulation performance during AGC I High forward transfer admittance I High forward transfer admittance to input capacitance ratio I Bo |
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