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NXP |
Quadruple ESD protection diode arrays I ESD protection of up to 4 lines I Max. peak pulse power: PPP = 200 W I Ultra low leakage current: IRM = 50 pA I Low clamping voltage: VCL = 12 V at IPP = 20 A I ESD protection up to 30 kV I IEC 61000-4-2; level 4 (ESD) I IEC 61000-4-5; (surge); I |
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NXP |
Double ESD protection diodes in SOT23 package • Unidirectional ESD protection of up to two lines • Common-cathode configuration • Max. peak pulse power: Ppp = 330 W at tp = 8/20 µs • Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A • Ultra-low reverse leakage current: IRM < 700 nA • ESD protect |
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NXP |
Quadruple ESD protection diode arrays I ESD protection of up to 4 lines I Max. peak pulse power: PPP = 200 W I Ultra low leakage current: IRM = 50 pA I Low clamping voltage: VCL = 12 V at IPP = 20 A I ESD protection up to 30 kV I IEC 61000-4-2; level 4 (ESD) I IEC 61000-4-5; (surge); I |
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NXP |
Low capacitance bidirectional ESD protection diodes I Bidirectional ESD protection of one line I ESD protection > 23 kV I Max. peak pulse power: Ppp = 500 W I IEC 61000-4-2, level 4 (ESD) I Low clamping voltage: V(CL)R = 26 V I IEC 61000-4-5 (surge); Ipp = 18 A I Ultra low leakage current: IRM < 0.09 |
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NXP |
Ultra low capacitance ESD protection diode I Unidirectional ESD protection of one line I Ultra low diode capacitance: Cd = 0.6 pF I Max. peak pulse power: PPP up to 200 W I Low clamping voltage I ESD protection > 23 kV I IEC 61000-4-2; level 4 (ESD) I IEC 61000-4-5; (surge) 1.3 Application |
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NXP |
Ultra low capacitance ESD protection diode I Unidirectional ESD protection of one line I Ultra low diode capacitance: Cd = 0.6 pF I Max. peak pulse power: PPP up to 200 W I Low clamping voltage I ESD protection > 23 kV I IEC 61000-4-2; level 4 (ESD) I IEC 61000-4-5; (surge) 1.3 Application |
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NXP |
Low capacitance unidirectional fivefold ESD protection diode arrays I ESD protection of up to five lines I Low diode capacitance I Max. peak pulse power: PPP = 25 W I Low clamping voltage: VCL = 12 V I Ultra low leakage current: IRM = 5 nA I ESD protection up to 20 kV I IEC 61000-4-2; level 4 (ESD) I IEC 61000-4-5 (s |
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NXP |
Unidirectional ESD protection diode and benefits ESD protection of one line Ultra small SMD plastic package Solderable side pads Package height typ. 0.37 mm Low clamping voltage: VCL = 23 V AEC-Q101 qualified ESD protection up to 30 kV IEC 61000-4-2; level 4 (ESD) IE |
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NXP |
Low capacitance quadruple ESD protection array I ESD protection of up to four lines I Low diode capacitance I Max. peak pulse power: PPP = 30 W I Low clamping voltage: VCL = 12 V I Ultra low leakage current: IRM = 5 nA I ESD protection up to 20 kV I IEC 61000-4-2; level 4 (ESD) I IEC 61000-4-5 ( |
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NXP |
(PESDxS1UB) ESD PROTECTION DIODES IN SOD 523 PACKAGE s s s s s s s Unidirectional ESD protection of one line Max. peak pulse power: PPP = 330 W at tp = 8/20 µs Low clamping voltage: VCL = 20 V at IPP = 18 A Ultra low leakage current: IRM < 700 nA ESD protection > 23 kV IEC 61000-4-2, level 4 (ESD) IEC |
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NXP |
Low capacitance bidirectional ESD protection diodes • Bi-directional ESD protection of one line • Low diode capacitance • Max. peak pulse power: Ppp = 130 W at tP = 8/20 µs • Low clamping voltage: V(CL)R = 14 V at Ipp = 12 A • Ultra low leakage current: IRM = 5 nA at VRWM = 5 V • ESD protection 30 kV |
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NXP |
Low Capacitance Bi-directional Double Esd Protection Diode s s s s s s s s www.DataSheet4U.com Bi-directional ESD protection of 2 lines Low diode capacitance Max. peak pulse power: Ppp = 130 W at tp = 8/20 µs Low clamping voltage: VCL(R) = 14 V at Ipp = 12 A Ultra low leakage current: IRM = 5 nA at VRWM = 5 |
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NXP |
Low capacitance bidirectional ESD protection diodes I Bidirectional ESD protection of one line I ESD protection > 23 kV I Max. peak pulse power: Ppp = 500 W I IEC 61000-4-2, level 4 (ESD) I Low clamping voltage: V(CL)R = 26 V I IEC 61000-4-5 (surge); Ipp = 18 A I Ultra low leakage current: IRM < 0.09 |
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NXP |
(PESDxV4UW) Very low capacitance quadruple ESD protection diode arrays s ESD protection of up to four lines s Very low diode capacitance s Low clamping voltage s Ultra low leakage current: IRM = 3 nA s ESD protection up to 12 kV s IEC 61000-4-2; level 4 (ESD) 1.3 Applications s Computers and peripherals s Audio and vid |
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NXP |
Ultra low capacitance ESD protection diode I Unidirectional ESD protection of one line I Ultra low diode capacitance: Cd = 0.6 pF I Max. peak pulse power: PPP up to 200 W I Low clamping voltage I ESD protection > 23 kV I IEC 61000-4-2; level 4 (ESD) I IEC 61000-4-5; (surge) 1.3 Application |
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NXP |
Ultra low capacitance ESD protection diode I Unidirectional ESD protection of one line I Ultra low diode capacitance: Cd = 0.6 pF I Max. peak pulse power: PPP up to 200 W I Low clamping voltage I ESD protection > 23 kV I IEC 61000-4-2; level 4 (ESD) I IEC 61000-4-5; (surge) 1.3 Application |
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NXP |
Ultra low capacitance ESD protection diode I Unidirectional ESD protection of one line I Ultra low diode capacitance: Cd = 0.6 pF I Max. peak pulse power: PPP up to 200 W I Low clamping voltage I ESD protection > 23 kV I IEC 61000-4-2; level 4 (ESD) I IEC 61000-4-5; (surge) 1.3 Application |
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NXP |
Low Capacitance Unidirectional ESD Protection Diodes I Unidirectional ESD protection of one line I Low diode capacitance: Cd = 25 pF I Low clamping voltage: VCL = 12 V I Very low leakage current: IRM = 10 nA I ESD protection up to 26 kV I IEC 61000-4-2; level 4 (ESD) I AEC-Q101 qualified 1.3 Applicatio |
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NXP |
Ultra low capacitance bidirectional ESD protection diode and benefits • • • • • Ultra low diode capacitance Cd = 0.30 pF High reverse standoff voltage VRWM = 24 V Ultra low leakage current: IRM = 1 nA ESD protection up to 10 kV; IEC 61000-4-2 AEC-Q101 qualified 3. Applications • • NFC antenna protection P |
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NXP |
Ultra low capacitance bidirectional double ESD protection array I Bidirectional ESD protection of up to I ESD protection up to 10 kV two lines I Ultra low diode capacitance: Cd = 2.9 pF I IEC 61000-4-2; level 4 (ESD) I Ultra low leakage current: IRM = 5 nA I AEC-Q101 qualified 1.3 Applications I Computers and per |
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