| No. | Partie # | Fabricant | Description | Fiche Technique |
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NXP |
NPN switching transistor • Collector current capability IC = 200 mA • Collector-emitter voltage VCEO = 40 V. APPLICATIONS • General switching and amplification. DESCRIPTION NPN switching transistor in a SOT23 plastic package. PNP complement: MMBT3906. MARKING TYPE NUMBER MMB |
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NXP |
Double ESD protection diodes I Unidirectional ESD protection of two lines I Bidirectional ESD protection of one line I Low diode capacitance: Cd ≤ 140 pF I Rated peak pulse power: PPPM ≤ 40 W I Ultra low leakage current: IRM ≤ 5 nA I ESD protection up to 30 kV (contact discharge |
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NXP |
Double ESD protection diodes I Unidirectional ESD protection of two lines I Bidirectional ESD protection of one line I Low diode capacitance: Cd ≤ 140 pF I Rated peak pulse power: PPPM ≤ 40 W I Ultra low leakage current: IRM ≤ 5 nA I ESD protection up to 30 kV (contact discharge |
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NXP |
Low capacitance unidirectional double ESD protection diodes Unidirectional ESD protection of ESD protection up to 30 kV (contact two lines discharge) Bidirectional ESD protection of one line IEC 61000-4-2; level 4 (ESD) Low diode capacitance: Cd ≤ 280 pF Rated peak pulse power: PPPM = 40 W |
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NXP |
Low capacitance unidirectional double ESD protection diodes Unidirectional ESD protection of ESD protection up to 30 kV (contact two lines discharge) Bidirectional ESD protection of one line IEC 61000-4-2; level 4 (ESD) Low diode capacitance: Cd ≤ 280 pF Rated peak pulse power: PPPM = 40 W |
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NXP |
Low capacitance unidirectional double ESD protection diodes Unidirectional ESD protection of ESD protection up to 30 kV (contact two lines discharge) Bidirectional ESD protection of one line IEC 61000-4-2; level 4 (ESD) Low diode capacitance: Cd ≤ 280 pF Rated peak pulse power: PPPM = 40 W |
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NXP |
Low capacitance unidirectional double ESD protection diodes Unidirectional ESD protection of ESD protection up to 30 kV (contact two lines discharge) Bidirectional ESD protection of one line IEC 61000-4-2; level 4 (ESD) Low diode capacitance: Cd ≤ 280 pF Rated peak pulse power: PPPM = 40 W |
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NXP |
PNP switching transistor • Collector current capability IC = −200 mA • Collector-emitter voltage VCEO = −40 V. APPLICATIONS • General switching and amplification. DESCRIPTION PNP switching transistor in a SOT23 plastic package. NPN complement: MMBT3904. MARKING TYPE NUMB |
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NXP |
NPN switching transistor • High current (max. 600 mA) • Low voltage (max. 40 V). APPLICATIONS • Switching and linear amplification. PINNING PIN 1 2 3 DESCRIPTION base emitter collector DESCRIPTION NPN switching transistor in a SOT23 plastic package. PNP complement: PMBT29 |
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NXP |
Double ESD protection diodes I Unidirectional ESD protection of two lines I Bidirectional ESD protection of one line I Low diode capacitance: Cd ≤ 140 pF I Rated peak pulse power: PPPM ≤ 40 W I Ultra low leakage current: IRM ≤ 5 nA I ESD protection up to 30 kV (contact discharge |
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NXP |
Double ESD protection diodes I Unidirectional ESD protection of two lines I Bidirectional ESD protection of one line I Low diode capacitance: Cd ≤ 140 pF I Rated peak pulse power: PPPM ≤ 40 W I Ultra low leakage current: IRM ≤ 5 nA I ESD protection up to 30 kV (contact discharge |
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NXP |
Double ESD protection diodes I Unidirectional ESD protection of two lines I Bidirectional ESD protection of one line I Low diode capacitance: Cd ≤ 140 pF I Rated peak pulse power: PPPM ≤ 40 W I Ultra low leakage current: IRM ≤ 5 nA I ESD protection up to 30 kV (contact discharge |
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NXP |
Double ESD protection diodes I Unidirectional ESD protection of two lines I Bidirectional ESD protection of one line I Low diode capacitance: Cd ≤ 140 pF I Rated peak pulse power: PPPM ≤ 40 W I Ultra low leakage current: IRM ≤ 5 nA I ESD protection up to 30 kV (contact discharge |
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NXP |
Low capacitance unidirectional double ESD protection diodes Unidirectional ESD protection of ESD protection up to 30 kV (contact two lines discharge) Bidirectional ESD protection of one line IEC 61000-4-2; level 4 (ESD) Low diode capacitance: Cd ≤ 280 pF Rated peak pulse power: PPPM = 40 W |
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NXP |
Low capacitance unidirectional double ESD protection diodes Unidirectional ESD protection of ESD protection up to 30 kV (contact two lines discharge) Bidirectional ESD protection of one line IEC 61000-4-2; level 4 (ESD) Low diode capacitance: Cd ≤ 280 pF Rated peak pulse power: PPPM = 40 W |
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NXP |
Low capacitance unidirectional double ESD protection diodes Unidirectional ESD protection of ESD protection up to 30 kV (contact two lines discharge) Bidirectional ESD protection of one line IEC 61000-4-2; level 4 (ESD) Low diode capacitance: Cd ≤ 280 pF Rated peak pulse power: PPPM = 40 W |
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NXP |
Low capacitance unidirectional double ESD protection diodes Unidirectional ESD protection of ESD protection up to 30 kV (contact two lines discharge) Bidirectional ESD protection of one line IEC 61000-4-2; level 4 (ESD) Low diode capacitance: Cd ≤ 280 pF Rated peak pulse power: PPPM = 40 W |
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NXP |
Low capacitance unidirectional double ESD protection diodes Unidirectional ESD protection of ESD protection up to 30 kV (contact two lines discharge) Bidirectional ESD protection of one line IEC 61000-4-2; level 4 (ESD) Low diode capacitance: Cd ≤ 280 pF Rated peak pulse power: PPPM = 40 W |
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NXP |
Low capacitance unidirectional double ESD protection diodes Unidirectional ESD protection of ESD protection up to 30 kV (contact two lines discharge) Bidirectional ESD protection of one line IEC 61000-4-2; level 4 (ESD) Low diode capacitance: Cd ≤ 280 pF Rated peak pulse power: PPPM = 40 W |
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NXP |
Low capacitance unidirectional double ESD protection diodes Unidirectional ESD protection of ESD protection up to 30 kV (contact two lines discharge) Bidirectional ESD protection of one line IEC 61000-4-2; level 4 (ESD) Low diode capacitance: Cd ≤ 280 pF Rated peak pulse power: PPPM = 40 W |
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