No. | Partie # | Fabricant | Description | Fiche Technique |
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NXP |
16-bit inverting buffer/line driver • 16-bit bus interface • Multiple VCC and GND pins minimize switching noise • ESD protection exceeds 2000 V per MIL STD 883 Method 3015 and 200 V per Machine Model dynamic power dissipation with high speed and high output drive. The MB2240 device |
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NXP |
PNP/PNP resistor-equipped transistors I Built-in bias resistors I Simplifies circuit design I Reduces component count I Reduces pick and place cost 1.3 Applications I Low current peripheral driver I Control of IC inputs I Replacement of general-purpose transistors in digital applications |
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NXP Semiconductors |
Dual octal transparent latch 3-State • 16-bit transparent latch • Multiple VCC and GND pins minimize switching noise DESCRIPTION The MB2373 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive. The MB2373 device is a du |
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NXP |
80C51 8-bit microcontroller family with extended memory 96 kbytes of OTP program memory and 3 kbytes of data SRAM, while the P87C51MB2 has 64 kbytes of OTP and 2 kbytes of RAM. In addition, both devices are equipped with a Programmable Counter Array (PCA), a watchdog timer that can be configured to differe |
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NXP |
PNP/PNP resistor-equipped transistors • 300 mW total power dissipation • Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package • Excellent coplanarity due to straight leads • Reduces number of components as replacement of two SC-75/SC-89 packaged transistors • Reduces required board sp |
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NXP |
16-bit buffer/line driver • 16-bit bus interface • Multiple VCC and GND pins minimize switching noise • Power-up 3-State • 3-State buffers • Output capability: +64 mA/ –32mA • Latch-up protection exceeds 500mA per Jedec Std 17 • ESD protection exceeds 2000 V per MIL STD 883 M |
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NXP |
PNP/PNP resistor-equipped transistors I Built-in bias resistors I Simplifies circuit design I Reduces component count I Reduces pick and place cost 1.3 Applications I Low current peripheral driver I Control of IC inputs I Replacement of general-purpose transistors in digital applications |
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NXP |
PNP/PNP resistor-equipped transistors • Transistors with built-in bias resistors R1 and R2 (typ. 47 kΩ each) • No mutual interference between the transistors • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space re |
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NXP Semiconductors |
Dual octal registered transceiver • Two 8-bit registered transceivers • Live insertion/extraction permitted • Power-up 3-State • Power-up reset • Multiple VCC and GND pins minimize switching noise • Latch-up protection exceeds 500mA per Jedec JC40.2 Std 17 • ESD protection exceeds |
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NXP |
16-bit buffer/line driver • 16 –bit bus interface • Power 3-State • Multiple VCC and GND pins minimize switching noise • 3-State buffers • Output capability: +64mA/ –32mA • Latch-up protection exceeds 500mA per Jedec Std 17 • ESD protection exceeds 2000 V per MIL STD 883 Metho |
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NXP |
16-bit transceivers • 16-bit bidirectional bus interface • Power –up 3-State • Multiple VCC and GND pins minimize switching noise • 3-State buffers • Output capability: +64 mA/ –32mA • Latch-up protection exceeds 500mA per Jedec Std 17 • ESD protection exceeds 2000 V per |
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NXP |
PNP/PNP resistor-equipped transistors I Built-in bias resistors I Simplifies circuit design I Reduces component count I Reduces pick and place cost 1.3 Applications I Low current peripheral driver I Control of IC inputs I Replacement of general-purpose transistors in digital applications |
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NXP |
Dual octal buffer line driver 3-State • Two 8-bit bus interfaces • Power-up 3-State • Multiple VCC and GND pins minimize switching noise • Provides ideal interface and increases fan-out of MOS Microprocessors DESCRIPTION The MB2541 high-performance BiCMOS device combines low static and |
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NXP |
Dual octal latched transceivers with dual enable 3-State latch • Two 8-bit octal transceivers with D-type • Live insertation/extraction permitted • Power-up 3-State • Power-up reset • Multiple VCC and GND pins minimize switching noise • Output capability: +64mA/ –32mA • Latch-up protection exceeds 500mA p |
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NXP |
PNP/PNP resistor-equipped transistors I Built-in bias resistors I Simplifies circuit design I Reduces component count I Reduces pick and place cost 1.3 Applications I Low current peripheral driver I Control of IC inputs I Replacement of general-purpose transistors in digital applications |
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