| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
NXP |
VHF push-pull power MOS transistor • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • Broadcast transmitter applications in the VHF frequency range. DESCRIPTION Dual push-pull silicon N-channel enhancement |
|
|
|
|
NXP |
VHF power MOS transistor • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • Linear amplifier applications in Television transmitters and transposers. DESCRIPTION Silicon N-channel enhancement mod |
|
|
|
|
NXP |
VHF push-pull power MOS transistor • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applicatio |
|
|
|
|
NXP |
Sample-and-hold amplifiers • Operates from ±5V to ±18V supplies • Less than 10µs acquisition time • TTL, PMOS, CMOS compatible logic input • 0.5mV typical hold step at CH=0.01µF • Low input offset • 0.002% gain accuracy • Low output noise in hold mode • Input characteristics |
|
|
|
|
NXP |
VHF linear push-pull power MOS transistor • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applicatio |
|
|
|
|
NXP |
VHF power LDMOS transistor I Typical CW performance at 225 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 1.0 A: N Load power PL = 500 W N Gain Gp ≥ 18 dB N Drain efficiency ηD = 60 % I Advanced flange material for optimum thermal behavior and re |
|