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NXP Semiconductors |
Three-quadrant triacs I Very high commutation performance I Isolated mounting base I High operating junction temperature I High immunity to dV/dt I 2500 V RMS isolation voltage 1.3 Applications I Heating and cooking appliances I High power motor control e.g. vacuum clean |
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NXP |
Three quadrant triacs high commutation -state current full sine wave; Tmb ≤ 107 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs CONDITIONS MIN. -500 5001 MAX. -600 6001 4 -800 800 UNIT V A I2t dIT/dt IGM VGM PGM PG(AV) |
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NXP |
3Q Hi-Com Triac and benefits • 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • High junction operating temperature capability • High voltage capability • Planar p |
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NXP |
3Q Hi-Com Triac and benefits • 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • High voltage capability • Isolated mounting base package • Planar passivated for vo |
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NXP |
3Q Hi-Com Triac and benefits • 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • High voltage capability • Planar passivated for voltage ruggedness and reliability |
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NXP |
3Q Hi-Com Triac and benefits 2500 V RMS isolation voltage capability 3Q technology for improved noise immunity High commutation capability with maximum false trigger immunity High immunity to false turn-on by dV/dt High junction temperature operating capab |
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NXP |
4Q Triac and benefits • High blocking voltage capability • High noise immunity • Planar passivated for voltage ruggedness and reliability • Triggering in all four quadrants 3. Applications • General purpose motor controls • General purpose switching 4. Quick |
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NXP |
3Q Hi-Com Triac and benefits • 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • High voltage capability • Planar passivated for voltage ruggedness and reliability |
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NXP |
3Q Hi-Com Triac and benefits • • • • • • • • • 3Q technology for improved noise immunity High commutation capability with maximum false trigger immunity High surge capability High Tj(max) Isolated mounting base with 2500 V (RMS) isolation Least sensitive gate for hi |
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NXP |
Three quadrant triacs guaranteed commutation RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Tmb ≤ 102 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 12 A; IG = 0.2 A; dIG/dt = 0 |
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NXP |
Thyristors sensitive gate 2 5 12 5 0.5 150 125 UNIT V A A A A A2s A/µs A V V W W ˚C ˚C VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tst |
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NXP |
Three quadrant triacs guaranteed commutation C 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Tmb ≤ 107 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 6 A; |
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NXP |
Three quadrant triacs te current full sine wave; Ths ≤ 56 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs CONDITIONS MIN. -500 5001 MAX. -600 6001 12 -800 800 UNIT V A I2t dIT/dt IGM VGM PGM PG(AV) Ts |
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NXP |
Three quadrant triacs ate current full sine wave; Ths ≤ 38 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs CONDITIONS MIN. -500 5001 MAX. -600 6001 16 -800 800 UNIT V A I2t dIT/dt IGM VGM PGM PG(AV) T |
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NXP |
Three quadrant triacs ate current full sine wave; Ths ≤ 38 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs CONDITIONS MIN. -500 5001 MAX. -600 6001 16 -800 800 UNIT V A I2t dIT/dt IGM VGM PGM PG(AV) T |
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NXP |
100mA NPN high-voltage transistor High voltage (max. 300 V) 1.3 Applications Telephony and professional communication equipment 1.4 Quick reference data Table 1. Symbol VCEO IC hFE Quick reference data Parameter collector-emitter voltage collector current DC current gain Con |
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NXP |
3Q Hi-Com Triac and benefits • 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High voltage capability • Less sensitive gate for high noise immunity • Planar passivated for voltage ruggedness and reliabil |
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NXP |
3Q Hi-Com Triac and benefits • 3Q technology for improved noise immunity • Direct interfacing with low power drivers and microcontrollers • Good immunity to false turn-on by dV/dt • High commutation capability with sensitive gate • High junction operating temperatur |
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NXP Semiconductors |
12A Three-quadrant triac I Very high commutation performance I Isolated mounting base I High immunity to dV/dt I 2500 V RMS isolation voltage 1.3 Applications I Motor control - e.g. washing machines I Refrigeration compressors I Non-linear rectifier-fed motor loads I Lamp di |
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NXP |
3Q Hi-Com Triac and benefits • • • • • • • • • 3Q technology for improved noise immunity High commutation capability with maximum false trigger immunity High immunity to false turn-on by dV/dt High surge capability High Tj(max) Isolated mounting base with 2500 V (RM |
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