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NXP BT2 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
BT258

NXP
Thyristors logic level
Datasheet
2
BT258S-800R

NXP
Thyristors logic level
A; IG = 50 mA; dIG/dt = 50 mA/µs -40 MAX. 800 5 8 75 82 28 50 2 5 5 0.5 150 1251 UNIT V A A A A A2s A/µs A V W W ˚C ˚C VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive pea
Datasheet
3
74ABT2244

NXP
Octal buffer/line driver

• Octal bus interface
• 3-State buffers
• Live insertion/extraction permitted
• Outputs include series resistance of 30Ω, making external termination resistors unnecessary DESCRIPTION The 74ABT2244 high-performance BiCMOS device combines low static
Datasheet
4
BT258X-500R

NXP
Thyristors logic level
surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 10 A; IG = 50 mA; dIG/dt = 50 mA/µs -40 MAX. -500R -600R -800R 5001 6001 800 5 8 75 82 28 50 2 5 5 0.5 150 1252 UNIT V A A A A A2s A/µs A V W W ˚C ˚C VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT
Datasheet
5
74ABT273A

NXP
Octal D-type flip-flop

• Eight edge-triggered D-type flip-flops
• Buffered common clock
• Buffered asynchronous Master Reset
• Power-up reset
• See 74ABT377 for clock enable version
• See 74ABT373 for transparent latch version
• See 74ABT374 for 3-State version
• ESD prot
Datasheet
6
BT236X

NXP Semiconductors
6A Four-quadrant triacs
s Isolated package s High ITSM 1.3 Applications s Lamp dimmers s Motor speed controllers s High inrush resistive loads s Heating and static switching 1.4 Quick reference data s VDRM ≤ 600 V (BT236X-600_600F_600G) s VDRM ≤ 800 V (BT236X-800_800G) s
Datasheet
7
BT258U

NXP
Thyristors logic level
ior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 10 A; IG = 50 mA; dIG/dt = 50 mA/µs -40 MAX. -500R -600R -800R 5001 6001 800 5 8 75 82 28 50 2 5 5 5 0.5 150 1252 UNIT V A A A A A2s A/µs A V V W W ˚C ˚C VDRM, VRRM Repetitive peak off-state voltages
Datasheet
8
ABT22V10A5

NXP
5V high-speed universal PLD

• Fastest 5V 22V10
• Low ground bounce (<1.0V typical)
• Live insertion/extraction permitted
• High output drive capability: 48mA/
  –16mA
• Varied product term distribution with up to 16 product terms per output for complex functions
• Metastable harde
Datasheet
9
BT236X-800

NXP
4Q Triac
and benefits
• High blocking voltage capability
• Isolated package
• Less sensitive gate for improved noise immunity
• Planar passivated for voltage ruggedness and reliability
• Triggering in all four quadrants 3. Applications
• General purpose moto
Datasheet
10
BT236X-800G

NXP
4Q Triac
and benefits
• High blocking voltage capability
• Isolated package
• Least sensitive gate for highest noise immunity
• Planar passivated for voltage ruggedness and reliability
• Triggering in all four quadrants 3. Applications
• General purpose moto
Datasheet
11
BT234-800E

NXP
4Q Triac
and benefits
• Direct triggering from low power drivers and logic ICs
• High blocking voltage capability
• Planar passivated for voltage ruggedness and reliability
• Sensitive gate for easy logic level triggering
• Triggering in all four quadrants 3
Datasheet
12
74ABT20

NXP
Dual 4-input NAND gate
Y1 VCC = Pin 14 GND = Pin 7 6 8 H H NOTES: H = High voltage level L = Low voltage level X = Don’t care SA00351 ORDERING INFORMATION PACKAGES 14-Pin Plastic DIP 14-Pin plastic SO 14-Pin Plastic SSOP Type II 14-Pin Plastic TSSOP Type I TEMPERATURE R
Datasheet
13
74ABT2240

NXP
Octal inverting buffer
two output enable inputs (1OE and 2OE), each controlling four of the 3-state outputs. The 74ABT2240 is designed with 30 Ω series resistance in both the HIGH and LOW states of the output. This design reduces line noise in applications such as memory a
Datasheet
14
74ABT2241

NXP
Octal buffers

• Octal bus interface
• 3-State buffers
• Power-up 3-State
• Output capability: +12mA/
  –32mA
• Latch-up protection exceeds 500mA per Jedec Std 17
• ESD protection exceeds 2000 V per MIL STD 883 Method 3015 and 200 V per Machine Model DESCRIPTION The
Datasheet
15
74ABT2245

NXP
Octal transceiver

• Octal bidirectional bus interface
• 3-State buffers
• Output capability: +12mA/
  –32mA
• Latch-up protection exceeds 500mA per Jedec Std 17
• ESD protection exceeds 2000 V per MIL STD 833 Method 3015 and 200 V per Machine Model DESCRIPTION The 74AB
Datasheet
16
74ABT240

NXP
Octal inverting buffer

• Octal bus interface
• 3-State buffers
• Output capability: +64mA/
  –32mA
• Latch-up protection exceeds 500mA per Jedec Std 17
• ESD protection exceeds 2000 V per MIL STD 883 Method 3015 and 200 V per Machine Model DESCRIPTION The 74ABT240 high-perf
Datasheet
17
74ABT241

NXP
Octal buffer/line driver

• Octal bus interface
• 3-State buffers
• Power-up 3-State
• Output capability: +64mA/
  –32mA
• Latch-up protection exceeds 500mA per Jedec Std 17
• ESD protection exceeds 2000 V per MIL STD 883 Method 3015 and 200 V per Machine Model
• Inputs are disa
Datasheet
18
74ABT244

NXP
Octal buffer/line driver

• Octal bus interface
• 3-State buffers
• Output capability: +64mA/
  –32mA
• Latch-up protection exceeds 500mA per Jedec Std 17
• ESD protection exceeds 2000 V per MIL STD 883 Method 3015 and 200 V per Machine Model DESCRIPTION The 74ABT244 high-perf
Datasheet
19
74ABT245

NXP
Octal Transceiver

• Octal bidirectional bus interface
• 3-State buffers
• Output capability: +64mA/
  –32mA
• Latch-up protection exceeds 500mA per Jedec Std 17
• ESD protection exceeds 2000 V per MIL STD 833 Method 3015 and 200 V per Machine Model DESCRIPTION The 74AB
Datasheet
20
BT258-500R

NXP
Thyristors logic level
ms t = 8.3 ms t = 10 ms ITM = 10 A; IG = 50 mA; dIG/dt = 50 mA/µs -40 MAX. -500R -600R -800R 5001 6001 800 5 8 75 82 28 50 2 5 5 5 0.5 150 1252 UNIT V A A A A A2s A/µs A V V W W ˚C ˚C VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITS
Datasheet



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