| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
NXP |
Programmable unijunction transistor °C non-repetitive peak anode current tp = 10 µs CONDITIONS − − − − − − −65 − −65 MIN. MAX. 70 175 2.5 3 20 300 +150 150 +150 V mA A A A/µs mW °C °C °C UNIT 1999 May 31 2 Philips Semiconductors Product specification Programmable unijunction transi |
|
|
|
|
NXP |
Programmable unijunction transistor/ Silicon controlled switch • Silicon controlled switch • Programmable unijunction transistor. APPLICATIONS • Switching applications such as: – Motor control – Oscillators – Relay replacement – Timers – Pulse shapers, etc. 4 3 kg MSB028 BRY39 PINNING PIN 1 2 3 4 cathode catho |
|
|
|
|
NXP |
Programmable unijunction transistor total power dissipation storage temperature junction temperature operating ambient temperature tp = 10 µs; δ = 0.01 1A ≤ 2.5 A Tamb ≤ 25 °C non-repetitive peak anode current tp = 10 µs CONDITIONS − − − − − − −65 − −65 MIN. MAX. 70 175 2.5 3 20 250 + |
|
|
|
|
NXP |
Programmable unijunction transistor total power dissipation storage temperature junction temperature operating ambient temperature tp = 10 µs; δ = 0.01 1A ≤ 2.5 A Tamb ≤ 25 °C non-repetitive peak anode current tp = 10 µs CONDITIONS − − − − − − −65 − −65 MIN. MAX. 70 175 2.5 3 20 250 + |
|
|
|
|
NXP |
Silicon controlled switch open collector tp = 10 µs; δ = 0.01 open emitter RBE = 10 kΩ open collector note 1 note 2 − − − − − − − − − − − − 70 70 5 175 175 −175 −2.5 −70 −70 −70 175 2.5 V V V mA mA mA A PARAMETER CONDITIONS MIN. MAX. UNIT PNP transistor collector-base volta |
|