No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
|
|
NXP |
Breakover diodes controlled breakover voltage and high holding current together with high peak current handling capability. Their intended application is protection of line based telecommunications equipment against voltage transients. QUICK REFERENCE DATA SYMBOL V( |
|
|
|
NXP |
Breakover diodes controlled breakover voltage and high holding current together with high peak current handling capability. Their intended application is protection of line based telecommunications equipment against voltage transients. QUICK REFERENCE DATA SYMBOL V( |
|
|
|
NXP |
Breakover diodes controlled breakover voltage and high holding current together with high peak current handling capability. Their intended application is protection of line based telecommunications equipment against voltage transients. QUICK REFERENCE DATA SYMBOL V( |
|
|
|
NXP |
Breakover diodes controlled breakover voltage and high holding current together with high peak current handling capability. Their intended application is protection of line based telecommunications equipment against voltage transients. QUICK REFERENCE DATA SYMBOL V( |
|
|
|
NXP |
Breakover diodes controlled breakover voltage and high holding current together with high peak current handling capability. Their intended application is protection of line based telecommunications equipment against voltage transients. QUICK REFERENCE DATA SYMBOL V( |
|
|
|
NXP |
Breakover diodes controlled breakover voltage and high holding current together with high peak current handling capability. Their intended application is protection of line based telecommunications equipment against voltage transients. QUICK REFERENCE DATA SYMBOL V( |
|
|
|
NXP |
Breakover diodes controlled breakover voltage and high holding current together with high peak current handling capability. Their intended application is protection of line based telecommunications equipment against voltage transients. QUICK REFERENCE DATA SYMBOL V( |
|
|
|
NXP |
Breakover diodes controlled breakover voltage and high holding current together with high peak current handling capability. Their intended application is protection of line based telecommunications equipment against voltage transients. QUICK REFERENCE DATA SYMBOL V( |
|
|
|
NXP |
Breakover diodes controlled breakover voltage and high holding current together with high peak current handling capability. Their intended application is protection of line based telecommunications equipment against voltage transients. QUICK REFERENCE DATA SYMBOL V( |
|
|
|
NXP |
Extremely low capacitance bidirectional ESD protection diode and benefits Bidirectional ESD protection of one line Extremely low diode capacitance Cd = 0.25 pF Minimized capacitance variation over voltage ESD protection up to 10 kV according to IEC 61000-4-2 Ultra small SMD package 1.3 Applications |
|