NXP BGA fiche technique

No.	Partie #	Fabricant	Description
1	BGA7024	NXP	400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier and benefits 400 MHz to 2700 MHz frequency operating range 16 dB small signal gain at 2 GHz 24 dBm output power at 1 dB gain compression Integrated active biasing External matching allows broad application optimization of the electrical
2	BGA3021	NXP	1.2GHz 16dB gain CATV amplifier and benefits  Internally biased  Frequency range of 40 MHz to 1200 MHz  High linearity with an IP3O of 47 dBm and an IP2O of 85 dBm  Operating from 5 V to 8 V supply  High gain output 1dB compression point of 30 dBm  75  input and output imp
3	BGA7351	NXP	high linearity Si variable gain amplifier and benefits  Dual independent digitally controlled 28 dB gain range VGAs, with 5-bit control interface  50 MHz to 500 MHz frequency operating range  Gain step size: 1 dB  0.1 dB  22 dB power gain  Fast gain stage switching capability  16.5 dB
4	BGA6589	NXP	MMIC wideband medium power amplifier and benefits  Broadband 50  gain block  20 dBm output power  SOT89 package  Single supply voltage needed 1.3 Applications  Broadband medium power gain blocks  Small signal high linearity amplifiers  Variable gain and high output power in comb
5	BGA2022	NXP	MMIC mixer • Large frequency range: – Cellular band (900 MHz) – PCS band (1900 MHz) – WLAN band (2.4 GHz). • High isolation • High linearity • High conversion gain. APPLICATIONS Receiver side of wireless systems that require high conversion gain and high linear
6	BGA2714	NXP	MMIC wideband amplifier I I I I I I I I Internally matched to 50 Ω Wide frequency range (2.7 GHz at 3 dB gain bandwidth) Flat 21 dB gain (± 1 dB from DC up to 2500 MHz) Very low current (4.6 mA) at low supply voltage of 3 V Very good reverse isolation (> 50 dB up to 2 GHz)
7	BGA3015	NXP	1 GHz 15 dB gain wideband amplifier MMIC and benefits  Internally biased  Flat gain  High linearity with an IP3O of 40 dBm and an IP2O of 60 dBm  Noise figure of 2.5 dB  75  input and output impedance  Operating from 5 V to 8 V supply 1.3 Applications  General wideband amplifiers
8	BGA3022	NXP	1.2GHz 18dB gain CATV amplifier and benefits  Internally biased  Frequency range of 40 MHz to 1200 MHz  High linearity with an IP3O of 47 dBm and an IP2O of 85 dBm  Operating from 5 V to 8 V supply  High gain output 1dB compression point of 30 dBm  75  input and output imp
9	BGA2003	NXP	Silicon MMIC amplifier • Low current • Very high power gain • Low noise figure • Integrated temperature compensated biasing • Control pin for adjustment bias current • Supply and RF output pin combined. APPLICATIONS • RF front end • Wideband applications, e.g. analog and d
10	BGA2818	NXP	MMIC wideband amplifier and benefits  Internally matched to 50   A gain of 30.0 dB at 2150 MHz  Output power at 1 dB gain compression = 4 dBm at 2150 MHz  Supply current = 19.9 mA at a supply voltage of 3.3 V  Reverse isolation > 36 dB up to 2150 MHz  Good linearity
11	BGA2801	NXP Semiconductors	MMIC wideband amplifier and benefits  Internally matched to 50   A gain of 22.2 dB at 250 MHz increasing to 23.0 dB at 2150 MHz  Output power at 1 dB gain compression = 2 dBm  Supply current = 14.3 mA at a supply voltage of 3.3 V  Reverse isolation > 29 dB up to 2 GHz
12	BGA7027	NXP Semiconductors	high linearity silicon amplifier and benefits  400 MHz to 2700 MHz frequency operating range  11 dB small signal gain at 2 GHz  28 dBm output power at 1 dB gain compression  Integrated active biasing  External matching allows broad application optimization of the electrical per
13	BGA2865	NXP	MMIC Wideband Amplifier and benefits  Input internally matched to 50   A gain of 32.2 dB at 950 MHz  Output power at 1 dB gain compression = 8 dBm  Supply current = 29.9 mA at a supply voltage of 5 V  Reverse isolation > 34 dB up to 2 GHz  Good linearity with low sec
14	BGA2866	NXP	MMIC Wideband Amplifier and benefits  Input internally matched to 50   A gain of 23.2 dB at 250 MHz increasing to 24.3 dB at 2150 MHz  Output power at 1 dB gain compression = 4 dBm  Supply current = 17.4 mA at a supply voltage of 5 V  Reverse isolation > 32 dB up to 2
15	BGA2870	NXP Semiconductors	MMIC wideband amplifier and benefits  Internally matched to 50   A gain of 31.1 dB at 500 MHz  Output power at 1 dB gain compression = 4 dBm  Supply current = 16.0 mA at a supply voltage of 2.5 V  Reverse isolation > 52 dB up to 750 MHz  Good linearity with low secon
16	BGA6489	NXP	MMIC wideband medium power amplifier I I I I Broadband 50 Ω gain block 20 dBm output power SOT89 package Single supply voltage needed 1.3 Applications I I I I I I I I Broadband medium power gain blocks Small signal high linearity ampliﬁers Variable gain and high output power in combina
17	BGA3018	NXP	1 GHz 18 dB gain wideband amplifier MMIC and benefits  Internally biased  Flat gain  High linearity with an IP3O of 40 dBm and an IP2O of 60 dBm  Noise figure of 2.1 dB  75  input and output impedance  Operating from 5 V to 8 V supply 1.3 Applications  General wideband amplifiers
18	BGA2867	NXP	MMIC wideband amplifier and benefits  Internally matched to 50   A gain of 26.4 dB at 2150 MHz  Output power at 1 dB gain compression = 8 dBm  Supply current = 21.7 mA at a supply voltage of 5.0 V  Reverse isolation > 37 dB up to 2150 MHz  Good linearity with low sec
19	BGA2803	NXP	MMIC wideband amplifier and benefits  Internally matched to 50   A gain of 23.6 dB at 950 MHz  Output power at 1 dB gain compression = 6 dBm  Supply current = 5.8 mA at a supply voltage of 3.0 V  Reverse isolation > 40 dB up to 2 GHz  Good linearity with low second
20	BGA2869	NXP	MMIC wideband amplifier and benefits  Internally matched to 50   A gain of 31.7 dB at 950 MHz  Output power at 1 dB gain compression = 10 dBm at 950 MHz  Supply current = 24.0 mA at a supply voltage of 5.0 V  Reverse isolation > 39 dB up to 2150 MHz  Good linearity w