| No. | Partie # | Fabricant | Description | Fiche Technique |
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NXP |
NPN 1GHz wideband transistor ng System (IEC 134). SYMBOL PARAMETER VCBO VCEO VEBO IC ICM Ptot Tstg Tj collector-base voltage collector-emitter voltage emitter-base voltage DC collector current peak collector current total power dissipation storage temperature junction temper |
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NXP |
NPN medium frequency transistor • Low current (max. 25 mA) • Low voltage (max. 20 V) • Very low feedback capacitance (typ. 350 fF). APPLICATIONS • IF and VHF applications in thick and thin-film circuits. handbook, halfpage BFS20 PINNING PIN 1 2 3 base emitter collector DESCRIPTION |
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NXP |
NPN 9 GHz wideband transistor • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amp |
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NXP |
NPN 9 GHz wideband transistor • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for wideband applications such as satellite |
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NXP |
NPN 9 GHz wideband transistor • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for RF wideband amplifier applications such |
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NXP |
NPN 1 GHz wideband transistor Note 1. Ts is the temperature at the soldering point of the collector pin. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS VCBO VCEO VEBO IC Ptot Tstg Tj collector-base voltage col |
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NXP |
NPN medium frequency transistor • Low current (max. 30 mA) • Low voltage (max. 20 V). APPLICATIONS • Medium frequency applications in thick and thin-film circuits. DESCRIPTION NPN medium frequency transistor in a SOT23 plastic package. 1 BFS19 PINNING PIN 1 2 3 base emitter collec |
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NXP |
NPN 5 GHz wideband transistor • Low current consumption • Low noise figure • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is designed for use in RF amplifiers and oscillators in pagers and pocket p |
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NXP |
NPN 5 GHz wideband transistor Low current consumption Low noise figure Gold metallization ensures excellent reliability SOT323 envelope. PINNING PIN DESCRIPTION Code: N6 1 base 2 emitter 3 collector DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is designed |
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NXP |
VHF Power Transistor |
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NXP |
NPN 3 GHz wideband transistor ONDITIONS open emitter − − − − 2.8 13.5 2.5 150 TYP. MAX. 25 15 25 300 − − − − V V mA mW GHz dB dB mV UNIT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj PARAMETER collector |
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NXP |
NPN medium frequency transistor • Low current (max. 25 mA) • Low voltage (max. 20 V). • Very low feedback capacitance (typ. 350 fF). APPLICATIONS • IF and VHF applications in thick and thin-film circuits. handbook, halfpage BFS20W PINNING PIN 1 2 3 base emitter collector DESCRIPTI |
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