NXP BF9 fiche technique

No.	Partie #	Fabricant	Description
1	BF998	NXP	Silicon N-channel dual-gate MOS-FETs  Short channel transistor with high forward transfer admittance to input capacitance ratio  Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS  VHF and UHF applications with 12 V supply voltage, such as television tuners and professiona
2	BF981	NXP	SILICON N-CHANNEL DUAL GATE MOS-FET
3	BF908WR	NXP	N-channel dual-gate MOS-FET • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS • VHF and UHF applications with 12 V supply voltage, such a
4	BF909WR	NXP	N-channel dual-gate MOS-FET • Specially designed for use at 5 V supply voltage • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Superior cross-modulation performance during AGC. APPLI
5	BF989	NXP	N-channel dual-gate MOS-FET • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • UHF applications such as: – UHF television tuners – Professional communication equipment. PINNING PIN 1 2 3 4 SYMBOL s, b d
6	BF904WR	NXP	N-channel dual-gate MOS-FET • Specially designed for use at 5 V supply voltage • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Superior cross-modulation performance during AGC. APPLI
7	BF998R	NXP	Silicon N-channel dual-gate MOS-FETs  Short channel transistor with high forward transfer admittance to input capacitance ratio  Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS  VHF and UHF applications with 12 V supply voltage, such as television tuners and professiona
8	BF904	NXP	N-channel dual gate MOS-FETs • Specially designed for use at 5 V supply voltage • Short channel transistor with high transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Superior cross-modulation performance during AGC. APPLICATIONS
9	BF904A	NXP	N-channel dual gate MOS-FETs • Specially designed for use at 5 V supply voltage • Short channel transistor with high transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Superior cross-modulation performance during AGC. APPLICATIONS
10	BF904AR	NXP	N-channel dual gate MOS-FETs • Specially designed for use at 5 V supply voltage • Short channel transistor with high transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Superior cross-modulation performance during AGC. APPLICATIONS
11	BF991	NXP	N-channel dual-gate MOS-FET • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • VHF applications such as: – VHF television tuners and FM tuners – Professional communication equipment. PINNING PIN 1 2 3
12	BF992	NXP	Silicon N-channel dual gate MOS-FET ou for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Silicon N-channel dual gate MOS-FET Product speciﬁcation BF992 APPLICATIONS • VHF applications such as VHF television tuners and FM tuners with 12 V supply voltage. T
13	BF996S	NXP	N-channel dual-gate MOS-FET • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • RF applications such as: – UHF television tuners – Professional communication equipment. PINNING PIN 1 2 3 4 SYMBOL s, b d g
14	BF909	NXP	N-channel dual gate MOS-FET • Specially designed for use at 5 V supply voltage • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Superior cross-modul
15	BF901	NXP	Silicon n-channel dual gate MOS-FETs • Intended for low voltage operation • Short channel transistor with high ratio  Yfs :Cis • Low noise gain-controlled amplifier to 1 GHz • BF901R has reverse pinning. DESCRIPTION Enhancement type field-effect transistors in plastic microminiature S
16	BF901R	NXP	Silicon n-channel dual gate MOS-FETs • Intended for low voltage operation • Short channel transistor with high ratio  Yfs :Cis • Low noise gain-controlled amplifier to 1 GHz • BF901R has reverse pinning. DESCRIPTION Enhancement type field-effect transistors in plastic microminiature S
17	BF904AWR	NXP	N-channel dual gate MOS-FETs • Specially designed for use at 5 V supply voltage • Short channel transistor with high transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Superior cross-modulation performance during AGC. APPLICATIONS
18	BF904R	NXP	N-channel dual gate MOS-FETs • Specially designed for use at 5 V supply voltage • Short channel transistor with high transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Superior cross-modulation performance during AGC. APPLICATIONS
19	BF990A	NXP	N-channel dual-gate MOS-FET • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • RF applications such as: – Television tuners with 12 V supply voltage – Professional communication equipment. PINNING PIN 1
20	BF994S	NXP	N-channel dual-gate MOS-FET • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • VHF applications such as: – VHF television tuners – Professional communication equipment. PINNING PIN 1 2 3 4 SYMBOL s, b d