| No. | Partie # | Fabricant | Description | Fiche Technique |
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NXP |
NPN Transistor I Low current I Low voltage I Three different gain selections 1.3 Applications I General-purpose switching and amplification 1.4 Quick reference data Table 2. Symbol VCEO IC hFE Quick reference data Parameter Conditions collector-emitter voltag |
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NXP |
NPN Transistor General-purpose transistors SMD plastic packages Two different gain selections 1.3 Applications General-purpose switching and amplification 1.4 Quick reference data Table 2. Symbol VCEO IC hFE Quick reference data Parameter collector-emit |
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NXP |
NPN general purpose transistors • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise stages in audio frequency equipment. DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC559 and BC560. 1 handbook, halfpage BC549; BC550 PI |
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NXP |
PNP general purpose transistors • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complements: BC546 and BC547. PINNING PIN 1 2 3 emitter base collec |
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NXP |
NPN Darlington transistor • High current (max. 500 mA) • Low voltage (max. 30 V) • Very high DC current gain (min. 30000). APPLICATIONS • Where very high amplification is required. DESCRIPTION NPN Darlington transistor in a TO-92; SOT54 plastic package. PNP complement: BC516. |
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NXP |
PNP Transistor • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complements: BC546 and BC547. PINNING PIN 1 2 3 emitter base collecto |
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NXP Semiconductors |
60V 1A PNP medium power transistors and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capab |
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NXP |
NPN Transistor • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC556 and BC557. PINNING PIN 1 2 3 emitter base collec |
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NXP |
1A PNP medium power transistors and benefits High collector current capability Three current gain selections IC and ICM Reduced Printed-Circuit Board (PCB) Leadless very small SMD plastic area requirements package with medium power capability Exposed heat sink for e |
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NXP |
NPN Transistor I Low current I Low voltage I Three different gain selections 1.3 Applicati |
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NXP |
PNP general purpose transistors • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complements: BC546 and BC547. PINNING PIN 1 2 3 emitter base collecto |
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NXP |
PNP general purpose transistors • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complements: BC546 and BC547. PINNING PIN 1 2 3 emitter base collec |
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NXP |
PNP general purpose transistor • Low current (max. 100 mA) • Low voltage (max. 30 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in a TO-92 (SOT54) plastic package. NPN complement: BC549. PINNING PIN 1 2 3 emitter base collector DESCR |
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NXP |
NPN Transistor General-purpose transistors SMD plastic packages Two different gain selections 1.3 Applications General-purpose switching and amplification 1.4 Quick reference data Table 2. Symbol VCEO IC hFE Quick reference data Parameter collector-emit |
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NXP |
NPN Transistor I Low current I Low voltage I Three different gain selections 1.3 Applicati |
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NXP |
1A PNP medium power transistors and benefits High collector current capability Three current gain selections IC and ICM Reduced Printed-Circuit Board (PCB) Leadless very small SMD plastic area requirements package with medium power capability Exposed heat sink for e |
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NXP |
PNP Darlington transistor • High current (max. 500 mA) • Low voltage (max. 30 V) • Very high DC current gain (min. 30000). APPLICATIONS • Where very high amplification is required. DESCRIPTION PNP Darlington transistor in a TO-92; SOT54 plastic package. NPN complement: BC517. |
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NXP |
NPN general purpose transistors • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise stages in audio frequency equipment. DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC559 and BC560. PINNING PIN 1 2 3 emitter base coll |
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NXP |
NPN Transistor • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise stages in audio frequency equipment. DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC559 and BC560. 1 handbook, halfpage BC549; BC550 PI |
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NXP |
NPN general purpose transistors • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise stages in audio frequency equipment. DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC559 and BC560. 1 handbook, halfpage BC549; BC550 PI |
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