NXP BAV fiche technique

No.	Partie #	Fabricant	Description
1	BAV10	NXP	High-speed diode • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 6 ns • General application • Continuous reverse voltage: max. 60 V • Repetitive peak reverse voltage: max. 60 V • Repetitive peak forward current: max. 600 mA. The
2	BAV199	NXP	Low-leakage double diode • Plastic SMD package • Low leakage current: typ. 3 pA • Switching time: typ. 0.8 µs • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA. MARKING TYPE NUMBER BAV199 MA
3	BAV21	NXP	General purpose diodes • Hermetically sealed leaded glass SOD27 (DO-35) package • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 150 V, 200 V • Repetitive peak reverse voltage: max. 200 V, 250 V • Repetitive peak forward current: max.
4	BAV20	NXP	General purpose diodes • Hermetically sealed leaded glass SOD27 (DO-35) package • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 150 V, 200 V • Repetitive peak reverse voltage: max. 200 V, 250 V • Repetitive peak forward current: max.
5	BAV70W	NXP	High-speed switching diodes and benefits  High switching speed: trr  4 ns  Low leakage current  Small SMD plastic packages  Low capacitance: Cd  1.5 pF  Reverse voltage: VR  100 V  AEC-Q101 qualified 1.3 Applications  High-speed switching  General-purpose switching
6	BAV23A	NXP	Dual high-voltage switching diodes and benefits  High switching speed: trr  50 ns  Low leakage current  Repetitive peak reverse voltage: VRRM  250 V  Low capacitance: Cd  2 pF  Small SMD plastic package 1.3 Applications  High-speed switching at high voltage  High-voltage g
7	BAV100	NXP	General purpose diodes • Small hermetically sealed glass SMD package • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 50 V, 100 V, 150 V and 200 V respectively • Repetitive peak reverse voltage: max. 60 V, 120 V, 200 V and 250 V respec
8	BAV70	NXP	High-speed switching diodes and benefits  High switching speed: trr  4 ns  Low leakage current  Small SMD plastic packages  Low capacitance: Cd  1.5 pF  Reverse voltage: VR  100 V  AEC-Q101 qualified 1.3 Applications  High-speed switching  General-purpose switching
9	BAV74	NXP	High-speed double diode • Small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 50 V • Repetitive peak reverse voltage: max. 60 V • Repetitive peak forward current: max. 450 mA. PINNING PIN 1 2 3 DESCRIPTION anode (a1) anode (a2) c
10	BAV102	NXP	Single general-purpose switching diodes and benefits High switching speed: trr ≤ 50 ns Low leakage current Low capacitance: Cd ≤ 5 pF Small hermetically sealed glass SMD package 1.3 Applications High-speed switching General-purpose switching Voltage clamping Reverse pola
11	BAV103	NXP	Single general-purpose switching diodes and benefits High switching speed: trr ≤ 50 ns Low leakage current Low capacitance: Cd ≤ 5 pF Small hermetically sealed glass SMD package 1.3 Applications High-speed switching General-purpose switching Voltage clamping Reverse pola
12	BAV170	NXP	Low-leakage double diode • Plastic SMD package • Low leakage current: typ. 3 pA • Switching time: typ. 0.8 µs • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA. DESCRIPTION Epitaxial, medium-s
13	BAV23	NXP	Dual high-voltage switching diodes and benefits  High switching speed: trr  50 ns  Low leakage current  Repetitive peak reverse voltage: VRRM  250 V  Low capacitance: Cd  2 pF  Small SMD plastic package 1.3 Applications  High-speed switching at high voltage  High-voltage g
14	BAV23S	NXP	Dual high-voltage switching diodes and benefits  High switching speed: trr  50 ns  Low leakage current  Repetitive peak reverse voltage: VRRM  250 V  Low capacitance: Cd  2 pF  Small SMD plastic package 1.3 Applications  High-speed switching at high voltage  High-voltage g
15	BAV45	NXP	Picoampere diode
16	BAV756S	NXP	High-speed switching diode array and benefits  High switching speed: trr  4 ns  Low leakage current  Small SMD plastic packages  Low capacitance: Cd  2 pF  Reverse voltage: VR  90 V  AEC-Q101 qualified 1.3 Applications  High-speed switching  General-purpose switching 1
17	BAV101	NXP	General purpose diodes • Small hermetically sealed glass SMD package • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 50 V, 100 V, 150 V and 200 V respectively • Repetitive peak reverse voltage: max. 60 V, 120 V, 200 V and 250 V respec
18	BAV105	NXP	High-speed diode • Small hermetically sealed glass SMD package • High switching speed: max. 6 ns • General application • Continuous reverse voltage: max. 60 V • Repetitive peak reverse voltage: max. 60 V • Repetitive peak forward current: max. 600 mA. APPLICATIONS •
19	BAV199W	NXP	Low-leakage double diode • Small plastic SMD package • Low leakage current: typ. 3 pA • Switching time: typ. 0.8 µs • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA. APPLICATIONS • Low-leakage
20	BAV70S	NXP	High-speed switching diodes and benefits  High switching speed: trr  4 ns  Low leakage current  Small SMD plastic packages  Low capacitance: Cd  1.5 pF  Reverse voltage: VR  100 V  AEC-Q101 qualified 1.3 Applications  High-speed switching  General-purpose switching