| No. | Partie # | Fabricant | Description | Fiche Technique |
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NXP |
DSP-based radio tuner one-chip and benefits Alignment free digital receiver including tuner and software-defined radio processing Command based high-level user interface combining high control flexibility with ease of control Read information with device and tuning status, r |
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NXP |
Safety power system basis chip with two fail-safe outputs, becoming a full part of a safety oriented system partitioning, to reach a high integrity safety level (up to ASIL D). The built-in CAN FD interface fulfills the ISO 11898-2(12) and -5(13) standards. The LIN interface fulf |
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NXP |
75MHz Cortex-M0+ Based Microcontroller include: • dual 16-bit analog-to-digital controllers (ADCs) sampling at up to 1.2 MS/s in 12-bit mode. • multiple motor control timers, up to 32 KB of flash memory and a comprehensive enablement suite from Freescale • third-party resources including |
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NXP |
GSM baseband processors bile cellular radio PCF5081/PCF5082 September 1993 6 Philips Semiconductors RF Communications Products Preliminary specification GSM baseband processors for digital mobile cellular radio PCF5081/PCF5082 September 1993 7 Philips Semiconducto |
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NXP |
FM/IF system and microcomputer-based tuning interface • 4-stage symmetrical IF limiting amplifier • Software selectable AM or FM input • Symmetrical quadrature demodulator • Single-ended LF output stage • D.C. output level determined by the input signal • Semi-adjustable AM and FM level voltage • Multi- |
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NXP |
168MHz ARM Cortex-M4 core based Microcontroller include; dual 12-bit analog-to-digital converters with 240ns conversion time, up to 30 PWM channels for support of multi-motor systems, eFlexPWM module with 312 ps resolution for digital power conversion applications, programmable delay block, memory |
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NXP |
High-speed switching diodes and benefits High switching speed: trr 4 ns Low leakage current Repetitive peak reverse voltage: VRRM 100 V AEC-Q101 qualified Low capacitance Reverse voltage: VR 100 V Small SMD plastic packages 1.3 Applications High-speed sw |
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NXP |
Safety power system basis chip with two fail-safe outputs, becoming a full part of a safety oriented system partitioning, to reach a high integrity safety level (up to ASIL D). The built-in CAN FD interface fulfills the ISO 11898-2(12) and -5(13) standards. The LIN interface fulf |
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NXP |
75MHz Cortex-M0+ Based Microcontroller include: • dual 16-bit analog-to-digital controllers (ADCs) sampling at up to 1.2 MS/s in 12-bit mode. • multiple motor control timers, up to 32 KB of flash memory and a comprehensive enablement suite from Freescale • third-party resources including |
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NXP |
Controlled avalanche rectifiers • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Available in ammo-pack. k a BAS11; BAS12 These packages are hermetically sealed and fatigue free as coefficients of expansion of all used parts are |
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NXP |
High-speed diode • Hermetically sealed leaded glass SOD68 (DO-34) package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 50 V • Repetitive peak reverse voltage: max. 50 V • Repetitive peak forward current: max. 225 mA. APPLICATIONS • High-speed |
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NXP |
High-speed switching diodes and benefits High switching speed: trr 4 ns Low leakage current Repetitive peak reverse voltage: VRRM 100 V AEC-Q101 qualified Low ca |
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NXP |
General purpose diodes • Small plastic SMD package • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 100 V; 150 V; 200 V • Repetitive peak reverse voltage: max. 120 V; 200 V; 250 V • Repetitive peak forward current: max. 625 mA. PINNIN |
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NXP |
High-speed switching diodes and benefits High switching speed: trr 4 ns Low leakage current Repetitive peak reverse voltage: VRRM 100 V AEC-Q101 qualified Low ca |
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NXP |
General-purpose Schottky diodes High switching speed High breakdown voltage Low leakage current Low capacitance 1.3 Applications Ultra high-speed switching Voltage clamping NXP Semiconductors BAS70 series; 1PS7xSB70 series General-purpose Schottky diodes 1.4 Quick |
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NXP |
General-purpose Schottky diodes High switching speed High breakdown voltage Low leakage current Low capacitance 1.3 Applications Ultra high-speed switching Voltage clamping NXP Semiconductors BAS70 series; 1PS7xSB70 series General-purpose Schottky diodes 1.4 Quick |
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NXP |
General-purpose Schottky diodes High switching speed High breakdown voltage Low leak |
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NXP |
168MHz ARM Cortex-M4 core based Microcontroller include; dual 12-bit analog-to-digital converters with 240ns conversion time, up to 30 PWM channels for support of multi-motor systems, eFlexPWM module with 312 ps resolution for digital power conversion applications, programmable delay block, memory |
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NXP |
Baseband delay line • Two comb filters, using the switched-capacitor technique, for one line delay time (64 µs) • Adjustment-free application • No crosstalk between SECAM colour carriers (diaphoty) • Handles negative or positive colour-difference input signals • Clampin |
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NXP |
High Voltage Switching Diodes High switching speed: trr ≤ 50 ns Low leakage current Repetitive peak reverse voltage: VRRM ≤ 300 V 1.3 Applications High-speed switching High-voltage switching Low capacitance: Cd ≤ 2 pF Reverse voltage: VR ≤ 300 V Small SMD plastic |
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