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NXP BAP DataSheet

No. Partie # Fabricant Description Fiche Technique
1
BAP51-02

NXP
General purpose PIN diode

• Low diode capacitance
• Low diode forward resistance. APPLICATIONS
• General RF applications. DESCRIPTION General purpose PIN diode in a SOD523 ultra small SMD plastic package. PINNING PIN DESCRIPTION 1 cathode 2 anode handbook, halfpage 1 2
Datasheet
2
BAP50-05

NXP
Silicon PIN diode
and benefits
• Two elements in common cathode configuration in a small-sized plastic SMD package
• Low diode capacitance
• Low diode forward resistance 1.3 Applications
• General RF application 2 Pinning information Table 1. Discrete pinning Pin De
Datasheet
3
BAP64-02

NXP
Silicon PIN diode
and benefits
• High voltage, current controlled
• RF resistor for RF attenuators and switches
• Low diode capacitance
• Low diode forward resistance
• Very low series inductance
• For applications up to 6 GHz
• AEC-Q101 qualified 1.3 Applications
Datasheet
4
BAP64-04W

NXP
Silicon PIN diode

• High voltage, current controlled
• RF resistor for RF attenuators and switches
• Low diode capacitance
• Low diode forward resistance
• Low series inductance
• For applications up to 3 GHz. APPLICATIONS
• RF attenuators and switches. DESCRIPTION Tw
Datasheet
5
BAP64-05

NXP
Silicon PIN diode
and benefits
• High voltage, current controlled
• RF resistor for RF attenuators and switches
• Low diode capacitance
• Low diode forward resistance
• Low series inductance
• For applications up to 3 GHz
• AEC-Q101 qualified 1.3 Applications
• RF at
Datasheet
6
BAP70-04W

NXP
Silicon PIN diode
and benefits
• High-voltage current control RF resistor for RF attenuators
• Low diode capacitance
• Low series inductance
• AEC-Q101 qualified 1.3 Applications
• RF attenuators and switches NXP Semiconductors 2 Pinning information Table 1. Pinnin
Datasheet
7
BAP63-05W

NXP
Silicon PIN diode

• High speed switching for RF signals
• Low diode capacitance
• Low diode forward resistance
• Low series inductance
• For applications up to 3 GHz. APPLICATIONS
• RF attenuators and switches. DESCRIPTION Two planar PIN diodes in common cathode confi
Datasheet
8
BAP1321-04

NXP
Silicon PIN diode

• High voltage, current controlled
• RF resistor for RF attenuators and switches
• Low diode capacitance
• Low diode forward resistance
• Very low series inductance
• For applications up to 3 GHz. k, 4 columns BAP1321-04 PINNING PIN 1 2 3 DESCRIPTIO
Datasheet
9
BAP50-03

NXP
General purpose PIN diode
and benefits
• Low diode capacitance
• Low diode forward resistance 1.3 Applications
• General RF application NXP Semiconductors BAP50-03 Silicon PIN diode 2 Pinning information Table 1. Discrete pinning Pin Description 1 cathode 2 anode Sim
Datasheet
10
BAP50-04

NXP
Silicon PIN diode
and benefits
• Two elements in series configuration in a small-sized plastic SMD package
• Low diode capacitance
• Low diode forward resistance 1.3 Applications
• General RF application NXP Semiconductors BAP50-04 Silicon PIN diode 2 Pinning infor
Datasheet
11
BAP51-03

NXP
Silicon PIN diode
and benefits
• Low diode capacitance: maximum 1.05 pF
• Low diode forward resistance: max. 0.7 Ω
• AEC-Q101 qualified 1.3 Applications
• General RF applications 2 Pinning information Table 1. Discrete pinning Pin Description 1 cathode 2 anode
Datasheet
12
BAP64-03

NXP
Silicon PIN diode
and benefits
• High voltage, current controlled
• RF resistor for RF attenuators and switches
• Low diode capacitance
• Low diode forward resistance
• Low series inductance
• For applications up to 3 GHz
• AEC-Q101 qualified 1.3 Applications
• RF at
Datasheet
13
BAP64-04

NXP
Silicon PIN diode
and benefits
• High voltage, current controlled
• RF resistor for RF attenuators and switches
• Low diode capacitance
• Low diode forward resistance
• Low series inductance
• For applications up to 3 GHz
• AEC-Q101 qualified 1.3 Applications
• RF at
Datasheet
14
BAP64-06

NXP
Silicon PIN diode
and benefits
• High voltage, current controlled
• RF resistor for RF attenuators and switches
• Low diode capacitance
• Low diode forward resistance
• Low series inductance
• For applications up to 3 GHz
• AEC-Q101 qualified 1.3 Applications
• RF at
Datasheet
15
BAP70-03

NXP
Silicon PIN diode
and benefits
 High voltage current controlled RF resistor for attenuators
 Low diode capacitance
 Very low series inductance 1.3 Applications
 RF attenuators
 (SAT) TV
 Car radio 2. Pinning information Table 1. Discrete pinning Pin Descripti
Datasheet
16
BAP70-05

NXP
Silicon PIN diode
and benefits
• High voltage; current controlled
• Low diode capacitance
• Low series inductance
• AEC-Q101 qualified 1.3 Applications
• RF attenuators and switches NXP Semiconductors 2 Pinning information Table 1. Discrete pinning Pin Description
Datasheet
17
BAP64-05W

NXP
Silicon PIN diode
and benefits
• High voltage, current controlled
• RF resistor for RF attenuators and switches
• Low diode capacitance
• Low diode forward resistance
• Low series inductance
• For applications up to 3 GHz
• AEC-Q101 qualified 1.3 Applications
• RF att
Datasheet
18
BAP27-01

NXP
Silicon PIN diode

• High speed switching for RF signals
• Low diode capacitance
• Low diode forward resistance
• Very low series inductance
• For applications up to 4 GHz. APPLICATIONS
• RF attenuators and switches. DESCRIPTION Planar PIN diode in a SOD723A ultra smal
Datasheet
19
BAP50-02

NXP
General purpose PIN diode
and benefits
• Low diode capacitance
• Low diode forward resistance 1.3 Applications
• General RF applications NXP Semiconductors BAP50-02 General purpose PIN diode 2 Pinning information Table 1. Discrete pinning Pin Description 1 cathode 2 a
Datasheet
20
BAP50-05W

NXP
Silicon PIN diode
and benefits
• Two elements in common cathode configuration in a small-sized plastic SMD package
• Low diode capacitance
• Low diode forward resistance 1.3 Applications
• General RF applications 2 Pinning information Table 1. Discrete pinning Pin
Datasheet



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