| No. | Partie # | Fabricant | Description | Fiche Technique |
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NXP |
Active bridge rectifier controller and benefits 2.1 Efficiency features • Forward conduction losses of the diode rectifier bridge are eliminated • Very low IC power consumption (2 mW). 2.2 Application features • Integrated high-voltage level shifters • Directly drives all four rectifi |
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NXP |
High-speed diode • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 ns • General application • Continuous reverse voltage: max. 30 V • Repetitive peak reverse voltage: max. 30 V • Repetitive peak forward current: max. 400 mA. The |
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NXP |
High-speed diode • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 ns • General application • Continuous reverse voltage: max. 10 V • Repetitive peak reverse voltage: max. 10 V • Repetitive peak forward current: max. 400 mA. The |
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NXP |
Three quadrant triacs high commutation n-repetitive peak on-state current full sine wave; Tmb ≤ 91 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 30 A; IG = 0.2 A; dIG/dt = 0.2 A/µs CONDITIONS MIN. -500 5001 MAX. -600 6001 25 -800 800 UNIT V A I2t dIT/ |
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NXP |
High-speed diode • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 ns • General application • Continuous reverse voltage: max. 10 V • Repetitive peak reverse voltage: max. 10 V • Repetitive peak forward current: max. 400 mA. The |
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NXP |
Three quadrant triacs high commutation petitive peak on-state current full sine wave; Tmb ≤ 91 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 30 A; IG = 0.2 A; dIG/dt = 0.2 A/µs 6001 MAX. -600 6001 25 -800 800 V A UNIT I2t dIT/dt IGM VGM PGM PG(AV) Tst |
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NXP |
Half-bridge power IC and benefits 2.1 System integration Integrated half-bridge power transistors UBA2213A: 220 V; 13.5 ; 0.9 A maximum ignition current UBA2213B: 220 V; 9 ; 1.35 A maximum ignition current UBA2213C: 220 V; 6.6 ; 1.85 A maximum ignition current |
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NXP |
3Q Hi-Com Triac and benefits • 3Q technology for improved noise immunity • High blocking voltage capability • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • Less sensitive gate for very high noise immunity |
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NXP |
Three quadrant triacs high commutation petitive peak on-state current full sine wave; Tmb ≤ 91 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 30 A; IG = 0.2 A; dIG/dt = 0.2 A/µs CONDITIONS MIN. -500 5001 MAX. -600 6001 25 -800 800 UNIT V A - I2t dIT/d |
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NXP |
3Q Hi-Com Triac and benefits • 3Q technology for improved noise immunity • High blocking voltage capability • High commutation capability with maximum false trigger immunity • Higher operating temperature capability • High immunity to false turn-on by dV/dt • Less s |
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NXP |
Half-bridge power IC and benefits 2.1 System integration Integrated half-bridge power transistors UBA2212C: 120 V; 2 ; 3.5 A maximum ignition current Integrated bootstrap diode Integrated high-voltage supply 2.2 General RMS lamp current control 2.3 Fast and sm |
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NXP |
Dual channel programmable angle sensor and benefits High precision sensor for magnetic High temperature range up to 160 C angular measurement Single package dual channel sensor Dual electric independent sensor module with integrated filters for channels with analog ratiomet |
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NXP |
Programmable angle sensor and benefits High precision sensor for magnetic High temperature range up to 160 C angular measurement Single package sensor module with Analog ratiometric output voltage integrated filters for improved ElectroMagnetic Compatibility ( |
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NXP |
Active bridge rectifier controller and benefits 2.1 Efficiency features • Forward conduction losses of the diode rectifier bridge are eliminated • Very low IC power consumption (2 mW) 2.2 Application features • Integrated high-voltage level shifters • Directly drives all four rectifie |
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NXP |
Three quadrant triacs high commutation petitive peak on-state current full sine wave; Tmb ≤ 91 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 30 A; IG = 0.2 A; dIG/dt = 0.2 A/µs CONDITIONS MIN. -500 5001 MAX. -600 6001 25 -800 800 UNIT V A - I2t dIT/d |
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NXP |
Three quadrant triacs high commutation petitive peak on-state current full sine wave; Tmb ≤ 91 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 30 A; IG = 0.2 A; dIG/dt = 0.2 A/µs CONDITIONS MIN. -500 5001 MAX. -600 6001 25 -800 800 UNIT V A - I2t dIT/d |
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NXP |
Three quadrant triacs high commutation petitive peak on-state current full sine wave; Tmb ≤ 91 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 30 A; IG = 0.2 A; dIG/dt = 0.2 A/µs 6001 MAX. -600 6001 25 -800 800 V A UNIT I2t dIT/dt IGM VGM PGM PG(AV) Tst |
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NXP |
Three quadrant triacs high commutation petitive peak on-state current full sine wave; Tmb ≤ 91 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 30 A; IG = 0.2 A; dIG/dt = 0.2 A/µs 6001 MAX. -600 6001 25 -800 800 V A UNIT I2t dIT/dt IGM VGM PGM PG(AV) Tst |
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NXP |
Three quadrant triacs high commutation n-repetitive peak on-state current full sine wave; Tmb ≤ 91 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 30 A; IG = 0.2 A; dIG/dt = 0.2 A/µs CONDITIONS MIN. -500 5001 MAX. -600 6001 25 -800 800 UNIT V A I2t dIT/ |
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NXP |
Three quadrant triacs high commutation petitive peak on-state current full sine wave; Tmb ≤ 91 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 30 A; IG = 0.2 A; dIG/dt = 0.2 A/µs CONDITIONS MIN. -500 5001 MAX. -600 6001 25 -800 800 UNIT V A - I2t dIT/d |
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