No. | Partie # | Fabricant | Description | Fiche Technique |
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NXP |
N-channel MOSFET • Low RDS(on) • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope, intended for use in relay, high-speed and line transfo |
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NXP Semiconductors |
N-channel MOSFET |
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NXP Semiconductors |
dual N-channel MOSFET and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick re |
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NXP Semiconductors |
N-channel MOSFET and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick re |
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NXP |
360mA N-channel Trench MOSFET and benefits AEC-Q101 qualified Logic-level compatible Trench MOSFET technology Very fast switching 1.3 Applications High-speed line driver Low-side loadswitch Relay driver Switching circuits 1.4 Quick reference data Table 1. Symbol |
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NXP Semiconductors |
N-channel MOSFET and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick re |
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NXP Semiconductors |
single N-channel MOSFET and benefits Very fast switching Trench MOSFET technology ESD protection up to 2 kV Logic-level compatible Ultra thin package profile with 0.37 mm height 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Swit |
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NXP Semiconductors |
N-Channel MOSFET s Logic level threshold compatible s Surface-mounted package s Very fast switching s TrenchMOS technology 1.3 Applications s Logic level translator s High-speed line driver 1.4 Quick reference data s VDS ≤ 60 V s RDSon ≤ 2 Ω s ID ≤ 475 mA s Ptot ≤ |
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NXP Semiconductors |
N-Channel MOSFET and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Symbol |
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NXP Semiconductors |
MOSFET and benefits AEC-Q101 qualified Logic-level compatible Trench MOSFET technology Very fast switching 1.3 Applications High-speed line driver Low-side loadswitch Relay driver Switching circuits 1.4 Quick reference data Table 1. Symbol |
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NXP Semiconductors |
MOSFET and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Symbol |
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NXP Semiconductors |
MOSFET and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Symbol |
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NXP |
N-channel TrenchMOS FET s Logic level threshold compatible s Surface-mounted package s Very fast switching s TrenchMOS™ technology 1.3 Applications s Logic level translator s High speed line driver 1.4 Quick reference data s VDS ≤ 60 V s RDSon ≤ 3 Ω s ID ≤ 385 mA s Ptot = |
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NXP |
0.3 A N-channel MOSFET I I I I Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 3 kV 1.3 Applications I I I I Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Symbol VDS I |
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