| No. | Partie # | Fabricant | Description | Fiche Technique |
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NXP |
NPN general purpose transistor • Low current (max. 100 mA) • Low voltage (max. 30 V). APPLICATIONS • Low noise stages in audio equipment. DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complement: 2N5087. 1 handbook, halfpage 2N5088 PINNING PIN 1 2 3 collector |
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NXP |
Thyristor RMS) ITRM Average on-state current RMS on-state current Repetitive peak on-state current half sine wave Tc ≤ 67 ˚C Tc ≤ 102 ˚C all conduction angles ITSM Non-repetitive peak half sine wave; Ta = 25 ˚C prior to surge; on-state current t = 8.3 m |
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NXP |
PNP general purpose transistor • Low current (max. 100 mA) • Low voltage (max. 50 V). APPLICATIONS • Low noise stages in audio equipment. DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package NPN complement: 2N5088. 1 handbook, halfpage 2N5087 PINNING PIN 1 2 3 collector b |
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NXP |
PowerMOS transistors Avalanche energy rated • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP2N50E, PHB2N50E, PHD2N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 2 A RDS(ON) ≤ 5 Ω s GENER |
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NXP |
PowerMOS transistor rce voltage Single pulse avalanche energy Peak avalanche current Operating junction and storage temperature range CONDITIONS Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C Tmb > 25 ˚C VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 |
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NXP |
PowerMOS transistors Avalanche energy rated • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP2N50E, PHB2N50E, PHD2N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 2 A RDS(ON) ≤ 5 Ω s GENER |
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NXP |
PowerMOS transistors Avalanche energy rated • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance • Extremely high dV/dt capability PHU2N50E QUICK REFERENCE DATA VDSS = 500 V ID = 2 A RDS(ON) ≤ 5 Ω GENERA |
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NXP |
PowerMOS transistors Avalanche energy rated • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Isolated package PHX2N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 1.4 A RDS(ON) ≤ 5 Ω s GENERAL DESCRIPTION N-channel |
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NXP |
PNP high-voltage transistors • Low current (max. 200 mA) • High voltage (max. 300 V). APPLICATIONS • Switching and linear amplification in military, industrial and consumer equipment. 1 handbook, halfpage 2N5415; 2N5416 PINNING PIN 1 2 3 emitter base collector, connected to cas |
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NXP |
PNP high-voltage transistors • Low current (max. 200 mA) • High voltage (max. 300 V). APPLICATIONS • Switching and linear amplification in military, industrial and consumer equipment. 1 handbook, halfpage 2N5415; 2N5416 PINNING PIN 1 2 3 emitter base collector, connected to cas |
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NXP |
PowerMOS transistor ar derating factor Gate-source voltage Single pulse avalanche energy Peak avalanche current Operating junction and storage temperature range CONDITIONS Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C Tmb > 25 ˚C VDD ≤ 50 V; s |
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NXP |
Transistor • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP2N50E, PHB2N50E, PHD2N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 2 A RDS(ON) ≤ 5 Ω s GENER |
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