NTE 2N5 fiche technique

No.	Partie #	Fabricant	Description
1	2N5905	Intersil Corporation	monolithic dual n-channel JFET
2	2N5484	InterFET	N-Channel JFET • InterFET N0026S Geometry • Low Noise: 4 nV/√Hz Typical • Low Ciss: 4.3pF Typical • Low Leakage: 10pA Typical • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • VHF/UHF Amplifiers Description The -25V InterFET 2N5484, 2N5485, a
3	2N5516	Intersil Corporation	DUAL N-CHANNEL JFET
4	2N5517	Intersil Corporation	DUAL N-CHANNEL JFET
5	2N5904	Intersil Corporation	monolithic dual n-channel JFET
6	2N5520	Intersil Corporation	DUAL N-CHANNEL JFET
7	2N5523	Intersil Corporation	DUAL N-CHANNEL JFET
8	2N5524	Intersil Corporation	DUAL N-CHANNEL JFET
9	2N5903	Intersil Corporation	monolithic dual n-channel JFET
10	2N5432	InterFET	N-Channel Silicon Junction Field-Effect Transistor
11	2N5198	InterFET	N-Channel Dual Silicon Junction Field-Effect Transistor
12	2N5515	Intersil Corporation	DUAL N-CHANNEL JFET
13	HGTH12N50C1	Intersil Corporation	N-Channel IGBT • 10A and 12A, 400V and 500V • VCE(ON): 2.5V Max. • TFI: 1µs, 0.5µs • Low On-State Voltage • Fast Switching Speeds • High Input Impedance • No Anti-Parallel Diode Applications HGTP-TYPES JEDEC TO-220AB • Power Supplies • Motor Drives • Protection C
14	2N5433	InterFET	N-Channel Silicon Junction Field-Effect Transistor
15	2N5550	NTE	Silicon NPN Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600m
16	2N5485	NTE	N-Channel Transistor . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions OFF Characteristics Gate−Source Breakdown Voltage Gate Reverse Current Gate−Source Cu
17	2N5039	NTE	Silicon NPN Transistor D High Speed: tf = 0.5s Max. D High Current: IC(max) = 30A D Low Collector−Emitter Saturation Voltage: VCE(sat) = 2.5V max @ IC = 20A Absolute Maximum Ratings: Collector−Base Voltage, VCBO 2N5038 . . . . . . . . . . . . . . . . . . . . . . . . . .
18	2N5519	Intersil Corporation	DUAL N-CHANNEL JFET
19	2N5521	Intersil Corporation	DUAL N-CHANNEL JFET
20	2N5522	Intersil Corporation	DUAL N-CHANNEL JFET