NTE 2N3 fiche technique

No.	Partie #	Fabricant	Description
1	2N3330	InterFET	P-Channel JFET • InterFET P0032F Geometry • Typical Noise: 10 nV/√Hz • Low Ciss: 3.2pF Typical • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • Choppers • Data Switches • Commutators Description The 20V InterFET 2N3330 and 2N3331 are targete
2	2N3055	NTE	Silicon NPN Power Transistor D DC Current Gain: hFE = 20 − 70 @ IC = 4A D Collector−Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A D Excellent Safe Operating Area Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . .
3	2N3459	InterFET	N-Channel JFET • InterFET N0016H Geometry • InterFET N0032H Geometry (2N3458) • Low Noise: 5 nV/√Hz Typical • High Gain: 7.5mS Typical (2N3458) • Low Cutoff Voltage: 2N3460 < 1.8V • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • General Purp
4	2N3906	NTE	Silicon PNP Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW Total Device Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W Derate Above 255C . . . . . . . . . . . . . . . .
5	2N3458	InterFET	N-Channel JFET • InterFET N0016H Geometry • InterFET N0032H Geometry (2N3458) • Low Noise: 5 nV/√Hz Typical • High Gain: 7.5mS Typical (2N3458) • Low Cutoff Voltage: 2N3460 < 1.8V • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • General Purp
6	2N3904	NTE	Silicon NPN Transistor
7	2N3584	NTE	Silicon NPN Transistors D TO66 Type Package D Continuous Collector Current: IC = 2A D Power Dissipation: PD = 35W @ TC = +25C D Collector−Emitter Saturation Voltage: VCE(sat) = 0.75V (Max) @ IC = 1A, IB = 125mA Absolute Maximum Ratings: Collector−Emitter 2N3583 . . Vol
8	2N3822	InterFET	N-Channel JFET • InterFET N0032H Geometry • Typical Noise: 7 nV/√Hz • Low Ciss: 6.0pF Typical • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • VHF Amplifiers • Small Signal Amplifier Description The -50V InterFET 2N3821 and 2N3822 are target
9	2N3792	NTE	Silicon PNP Transistor nuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10	2N3824	InterFET	N-Channel JFET • InterFET N0032H Geometry • Typical Noise: 7 nV/√Hz • Low Ciss: 6.0pF Typical • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • VHF Amplifiers • Small Signal Amplifier Description The -50V InterFET 2N3823 and 2N3824 are target
11	2N3094	International Rectifier	110 Amp RMS SCR
12	2N3821	InterFET	N-Channel JFET • InterFET N0032H Geometry • Typical Noise: 7 nV/√Hz • Low Ciss: 6.0pF Typical • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • VHF Amplifiers • Small Signal Amplifier Description The -50V InterFET 2N3821 and 2N3822 are target
13	2N3819	InterFET	N-Channel JFET • InterFET N0032H Geometry • Low Noise: 7 nV/√Hz Typical • Low Ciss: 6pF Typical • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • Audio Amplifiers • General Purpose Amplifiers • Switches Source 1 Drain 2 SOT23 Top View 3 Gat
14	2N3905	NTE	Silicon PNP Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW Total Device Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W Derate Above 255C . . . . . . . . . . . . . . . .
15	2N3583	NTE	Silicon NPN Transistors D TO66 Type Package D Continuous Collector Current: IC = 2A D Power Dissipation: PD = 35W @ TC = +25C D Collector−Emitter Saturation Voltage: VCE(sat) = 0.75V (Max) @ IC = 1A, IB = 125mA Absolute Maximum Ratings: Collector−Emitter 2N3583 . . Vol
16	2N3460	InterFET	N-Channel JFET • InterFET N0016H Geometry • InterFET N0032H Geometry (2N3458) • Low Noise: 5 nV/√Hz Typical • High Gain: 7.5mS Typical (2N3458) • Low Cutoff Voltage: 2N3460 < 1.8V • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • General Purp
17	2N3819	NTE	N-Channel RF Amplifier
18	2N3585	NTE	Silicon NPN Transistors D TO66 Type Package D Continuous Collector Current: IC = 2A D Power Dissipation: PD = 35W @ TC = +25C D Collector−Emitter Saturation Voltage: VCE(sat) = 0.75V (Max) @ IC = 1A, IB = 125mA Absolute Maximum Ratings: Collector−Emitter 2N3583 . . Vol
19	2N3331	InterFET	P-Channel JFET • InterFET P0032F Geometry • Typical Noise: 10 nV/√Hz • Low Ciss: 3.2pF Typical • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • Choppers • Data Switches • Commutators Description The 20V InterFET 2N3330 and 2N3331 are targete
20	2N3054	NTE	Silicon NPN Transistor D Excellent Safe Operating Area D DC Current Gain Specified to 3.0 Amps Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55V Collec