| No. | Partie # | Fabricant | Description | Fiche Technique |
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International Rectifier |
HEXFET Power MOSFET ingle Transistor Flyback Notes through are on page 9 www.irf.com 1 12/03/04 IRFR/U1N60APbF Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source |
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Lonten |
N-channel MOSFET Ultra low RDS(on) Ultra low gate charge (typ. Qg = 28nC) 100% UIS tested RoHS compliant D G S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current Pulsed drain current 1) ( TC = 25°C ) |
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International Rectifier |
SCHOTTKY RECTIFIER The 1N6843CCU3 center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of high reliability environments. It is packaged in the hermetic surface mount SMD-0.5 ceramic package. The device's forward voltage drop and r |
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International Rectifier |
SCHOTTKY RECTIFIER The 1N6843CCU3 center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of high reliability environments. It is packaged in the hermetic surface mount SMD-0.5 ceramic package. The device's forward voltage drop and r |
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International Rectifier |
SCHOTTKY RECTIFIER The 1N609. Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 125° C junction temperature. Typical applications are in switching power |
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International Rectifier |
Schottky Rectifier |
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International Rectifier |
SCHOTTKY RECTIFIER The 1N6660DT1 Doubler Schottky rectifier has been expressly designed to meet the rigorous requirements of high reliability environments. It is packaged in the hermetic isolated TO-254AA package. The device's forward voltage drop and reverse leakage c |
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International Rectifier |
SCHOTTKY RECTIFIER The 1N6843CCU3 center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of high reliability environments. It is packaged in the hermetic surface mount SMD-0.5 ceramic package. The device's forward voltage drop and r |
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International Rectifier |
SCHOTTKY RECTIFIER TO-203AB (DO-5) The 1N609. Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 125° C junction temperature. Typical applications are |
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International Rectifier |
SMPS MOSFET gh are on page 9 www.irf.com 1 3/7/03 IRFR/U1N60A Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-t |
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International Rectifier |
HEXFET Power MOSFET ingle Transistor Flyback Notes through are on page 9 www.irf.com 1 12/03/04 IRFR/U1N60APbF Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source |
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SSDI |
CENTERTAP SCHOTTKY RECTIFIER • • • • • • • • • • • Low Forward Voltage Drop Low Reverse Leakage Current Guard Ring for Over-voltage Protection Isolated Hermetically Sealed Power Package Ceramic Seals Available Custom Lead Forming Available Eutectic Die Attach 175°C Operating Te |
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Allied Components International |
Ceramic Core Chip Inductors • 0603 size suitable for pick and place automation • Low Profile under 1.02mm • Ceramic core provide high self resonant frequency. • High Q values at high frequencies • Ceramic core also provides excellent thermal and batch consistency Electrical Ind |
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International Rectifier |
Schottky Rectifier |
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International Rectifier |
Schottky Rectifier |
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International Rectifier |
Schottky Rectifier |
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International Rectifier |
SCHOTTKY RECTIFIER The 1N6660DT1 Doubler Schottky rectifier has been expressly designed to meet the rigorous requirements of high reliability environments. It is packaged in the hermetic isolated TO-254AA package. The device's forward voltage drop and reverse leakage c |
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International Rectifier |
SCHOTTKY RECTIFIER The 1N6660DT1 Doubler Schottky rectifier has been expressly designed to meet the rigorous requirements of high reliability environments. It is packaged in the hermetic isolated TO-254AA package. The device's forward voltage drop and reverse leakage c |
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NTE |
Germanium Diode D Low Forward Voltage Drop D Low Power Consumption D Very Low Noise Level Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Peak Reverse Voltage, PRV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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Lonten |
N-channel MOSFET Ultra low Rdson Ultra low gate charge (typ. Qg = 34nC) 100% UIS tested RoHS compliant D G S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current Pulsed drain current 1) ( TC = 25°C ) ( T |
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