| No. | Partie # | Fabricant | Description | Fiche Technique |
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Pan Jit International |
PLASTIC SILICON RECTIFIERS • Low forward voltage drop • High current capability • High reliability • High surge current capability • Exceeds environmental standards of MIL-S-19500/228 • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: A-405 Molded plast |
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NTE |
Zener Diode D Zener Voltage 3.3V to 100V Absolute Maximum Ratings: (TA = +25C, unless otherwise specified) Power Dissipation (TL +50C, Lead Length = 3/8”), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Derate Above +50 . . . . . . |
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Pan Jit International |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE • Low profile package • Built-in strain relief • Low inductance • High temperature soldering : 260°C /10 seconds at terminals • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Both normal and Pb free product are availa |
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Pan Jit International Inc. |
FAST SWITCHING PLASTIC RECTIFIER l l High surge current capability Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound l l l l Void-free Plastic in a DO-41 package 1.0 ampere operation at TA=55 ¢J with no the |
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Pan Jit International |
PLASTIC SILICON RECTIFIERS • Low forward voltage drop • High current capability • High reliability • High surge current capability • Exceeds environmental standards of MIL-S-19500/228 • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: A-405 Molded plast |
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International Rectifier |
275 Amp Avg Power Silicon Rectifier Diodes |
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International Rectifier |
275 Amp Avg Power Silicon Rectifier Diodes |
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NTE |
General Purpose Silicon Rectifier |
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International Rectifier |
(1N4816 - 1N4819) 1.5 AND 2.0 AMP MOLDED SILICON RECTIFIER DIODES |
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Pan Jit International |
PLASTIC SILICON RECTIFIERS • Low forward voltage drop • High current capability • High reliability • High surge current capability • Exceeds environmental standards of MIL-S-19500/228 • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: A-405 Molded plast |
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NTE |
Fast Switching Diode D Fast Switching Speed D General Purpose Rectification D Silicon Epitaxial Planar Construction Mechanical Data: D Case: DO-35 D Leads: Solderable per MIL-STD-202, Method 208 D Polarity: Cathode Band D Marking: Type Number D Weight: 0.13 grams (appro |
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NTE |
Small Signal Diode D DO−35 Package Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Max. Repetitive Reverse Voltage,VRRM 1N456A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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NTE |
Small Signal Diode D DO−35 Package Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Max. Repetitive Reverse Voltage,VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Power Dissipation, PD . |
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NTE |
Zener Diode D Zener Voltage 3.3V to 100V Absolute Maximum Ratings: (TA = +25C, unless otherwise specified) Power Dissipation (TL +50C, Lead Length = 3/8”), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Derate Above +50 . . . . . . |
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NTE |
General Purpose Silicon Rectifier |
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International Rectifier |
275 Amp Avg Power Silicon Rectifier Diodes |
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International Rectifier |
275 Amp Avg Power Silicon Rectifier Diodes |
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International Rectifier |
275 Amp Avg Power Silicon Rectifier Diodes |
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International Rectifier |
275 Amp Avg Power Silicon Rectifier Diodes |
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International Rectifier |
275 Amp Avg Power Silicon Rectifier Diodes |
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