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Toshiba |
SILICON P-CHANNEL MOS FET . High Breakdown Voltage : VDS S=-160V . High Forward Transfer Admitt ance : lYf s l=2.0S (Typ.) . Complementary to 2SK405 Unit in mm 15.9MAX. 03.2±O.2 . o /o m /"«— J \ w Q o - X< yS ^ — -H oo jl rf. ? i i 2.C ±a3 os IO 1-1 |
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ETC |
(2SJ118 / 2SJ119) SILICON P-CHANNEL MOS FET |
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Soujet |
Single Channel DC LED lighting control touch IC →→→OFF 5.4 、： 、 LED ， ► S0 ，PWM1、PWM2 LED ， ► ，PWM1 LED ；， PWM1 LED ，PWM2 LED ；， LED 。 ► LED ， S0 。 ► ， S0 PWM1 LED ， 。 SJT8003 V1.1 TS-Soujet-180C 5 （ 7 ） www. soujet.com SJT8003 LED IC 5.5 、、 。， ， LED 。， 5.6 ：（、）， CS |
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szsanjing |
2.3W dual-channel audio power amplifier ™⊃∝∇≠ ×→® ℑ′⊂∑⊃ , Ργ=0 Ω, ςι=150µΩ φ=100Ηζ ℑ′⊂∑⊃ Ργ=0Ω ℑ′⊂∑⊃ Ργ=10κΩ ℑ′⊂∑⊃ Ργ=10κΩ ςο=0δΒµ ℑ′⊂∑⊃ ∝∩⊕ ςι=0ς, Στερεο ℑ′⊂∑⊃ ∝∩⊕ ℑ′⊂∑⊃ ΤΗ∆=10%, Ρ Λ =4Ω ΤΗ∆=10%, Ρ Λ =8Ω ΤΗ∆=10%, Ρ Λ =8Ω Πο=250µΩ Ρ Λ =4Ω www.DataSheet.co.kr •≡⊕ ςχχ Π ∆ Τοπ |
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SJ |
6-Channel Audio Selector are incorporated into a single chip thereby providing very high performance. Pin assignments and application circuit are optimized for easy PCB layout and cost saving advantages. Outline Drawing DIP-28 FEATURES z z z z Supply Voltage: 9V 4 Stereo |
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Sanyo Semicon Device |
P-Channel Silicon MOSFET • • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Vo |
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CASS |
N-Channel Trench Power MOSFET ● VDS=60V；ID=80A@ VGS=10V； RDS(ON)<7.2mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply CSJ60N62 /CSJ60N62A To-263 Top View Schematic Diagram |
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SJ |
2-Channel Audio Power Amplifier SJ2025 Ó¦Óõç · £¨ 1£© SJ2025 Á¢ÌåÉù ·Å´óÏß · (2) SJ2025 BTL ÇÅʽ ·Å´óÏß · http://www.DataSheet4U.net/ URL:http://www.szsanjing.com ------------------ TEL: 0755-29663136 FAX: 0755-29663137 -----------------page:3 /5 datasheet pdf - http://www. |
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Hitachi Semiconductor |
P-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SJ181(L), 2SJ181(S) Absolut |
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Hitachi Semiconductor |
P-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SJ181(L), 2SJ181(S) Absolut |
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Hitachi Semiconductor |
Silicon P-Channel MOS FET • • • • Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline TO-220AB D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain S 2SJ76, 2SJ77, 2SJ78, 2SJ79 Absolute Maximum Ratings (Ta = 25° |
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NEC |
P-Channel MOSFET • Small mounting area: about 60 % of the conventional mini-mold package (SC-70) • Can be directly driven by 3-V IC • Can be automatically mounted 0.5 1.0 1.6 ± 0.1 0.6 0.75 ± 0.05 EQUIVALENT CIRCUIT Drain (D) The internal diode in the right figur |
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Hitachi Semiconductor |
P-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SJ181(L), 2SJ181(S) Absolut |
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Toshiba Semiconductor |
P-Channel MOSFET lease design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc |
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NEC |
P-Channel MOSFET |
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Toshiba Semiconductor |
Silicon P-Channel MOSFET oduct to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semic |
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Hitachi Semiconductor |
Silicon P-Channel MOSFET • Low on-resistance R DS(on) = 0.16 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline TO –220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SJ539 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source vo |
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Hitachi |
SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING |
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CASS |
N-Channel Trench Power MOSFET ● VDS=75V; ID=92A@ VGS=10V; RDS(ON)<7.45mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test To-263 Top View Schematic Diagram Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply VDS = 75 V ID = 9 |
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Intersil Corporation |
55A/ -60V/ 0.029 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs • 55A, -60V, rDS(ON) = 0.029Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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