No. | Partie # | Fabricant | Description | Fiche Technique |
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NEL Frequency Controls |
(HS-1530 Series) Crystal Clock Oscillators • Wide frequency range – 80.0MHz to 140.0MHz • User specified tolerance available • Will withstand vapor phase temperatures of 253°C for 4 minutes maximum • Space-saving alternative to discrete component oscillators • High shock resistance, to 3000g • |
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NEL |
(HS-800 / HS-810) ECL • Wide frequency range –15.0MHz to 250.0MHz • User specified tolerance available • Will withstand vapor phase temperatures of 253°C for 4 minutes maximum • Space-saving alternative to discrete component oscillators • High shock resistance, to 3000g • |
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HannStar |
TFT LCD Panel Ŷ 17.0 WXGA+ for Monitor application Ŷ High Resolution: 1440*900 Ŷ 2-ch LVDS interface system Ŷ LCD Timing Controller Ŷ Wide Viewing Angle Ŷ RoHS compatible 1.3 Applications Ŷ Desktop Monitor Ŷ Display terminals for AV applications Ŷ Display termina |
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PerkinElmer Optoelectronics |
Lamps for Photolithography 000 watts. With the introduction of new materials and proprietary manufacturing processes, we have extended lamp lifetimes form several hundred hours to more than two thousand hours. The HSH Series provides longer lifetimes, outstanding uniformity, a |
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NEL Frequency Controls |
HS-1530 • Wide frequency range – 80.0MHz to 140.0MHz • User specified tolerance available • Will withstand vapor phase temperatures of 253°C for 4 minutes maximum • Space-saving alternative to discrete component oscillators • High shock resistance, to 3000g • |
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Hannstar |
TFT LCD Panel ■ 15” XGA TFT LCD panel ■ 2 CCFLs Backlight system ■ Supported XGA (V:768 lines, H:1024 pixels) resolution ■ Supported to 75Hz refresh rate ■ Without LCD Timing Controller 1.3 General information Item Outline dimension Display area Number of Pixel P |
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NEL |
Crystal Clock Oscillators |
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Vanguard Semiconductor |
N-Channel Advanced Power MOSFET N-Channel Enhancement mode Very low on-resistance Fast Switching 100% Avalanche Tested Pb-free lead plating; RoHS compliant VSD025N10HS 100V/32A N-Channel Advanced Power MOSFET V DS 100 V R @DS(on),TYP VGS=10 V 20 mΩ I D 32 A TO-25 |
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Intersil Corporation |
Radiation Hardened Single 8/Differential 4 Channel CMOS Analog Multiplexers make the HS-0548RH and HS-0549RH ideal for use in systems where the an |
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HannStar |
TFT LCD Panel Ŷ 12.1 (16:9 diagonal) inch configuration Ŷ One channel LVDS interface Ŷ 262K color by 6 bit R.G.B signal input Ŷ RoHS Compliance Ŷ Halogen Free 1.3 Applications NB 1.4 General information Item Outline Dimension Display area Number of Pixel P |
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3PEAK |
Automotive Dual-Channel Ultra-Highspeed GaN Predriver ⚫ AEC-Q100 Grade-1 Qualified (TPM2025Q Only) ⚫ Dual Independent Channels ⚫ 5-V Single Supply with Optimized Output Damping for Gan Reliability ⚫ 7-A Peak Source And 5-A Sink-Drive Current ⚫ 0.69-ns Minimum Input Pulse Width (Typical) ⚫ Low Propagatio |
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natlinear |
5A/100V withstand voltage N-channel enhanced FET |
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natlinear |
80A/40V withstand voltage N-channel enhanced FET ircuit Rev.1.0 April. 12.2016 3 www.natlinear.com LN80N04 l Rev.1.0 April. 12.2016 4 www.natlinear.com LN80N04 Rev.1.0 April. 12.2016 5 www.natlinear.com l TO-252 LN80N04 Rev.1.0 April. 12.2016 6 www.natlinear.com |
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OKI Semiconductor |
4-Channel Mixing ADPCM Voice Syntehsis LSI |
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Texas Instruments |
3-Channel Low Power SDTV Video Amplifier • 3 SDTV Video Amplifiers for CVBS, S-Video, Y'P'BP'R 480i/576i, or G'B'R' Video Systems • I2C™ Control of All Functions on Each Channel • Integrated Low-Pass Filters – 5th Order, 8-MHz Butterworth • 0.5-dB Attenuation at 5.5 MHz • 48-dB Attenuation |
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ChipSourceTek |
N-Channel Power ● VDS = 30V, ID = 7A RDS(ON) < 21mΩ @ VGS=10V RDS(ON) < 34mΩ @ VGS=4.5V Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● PWM applications ● Load switch ● Power m |
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Excelliance MOS |
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor bient3 RθJA 1Pulse width limited by maximum junction temperature. 2Duty cycle < 1% 350°C / W when mounted on a 1 in2 pad of 2 oz copper. 4Guarantee by Engineering test TYPICAL 2020/9/2 A.0 EMB05N10HS LIMITS ±20 122 77 16 13 196 36 64.8 32.4 |
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Excelliance MOS |
Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ient3 RθJA 1Pulse width limited by maximum junction temperature. 2Duty cycle < 1% 355°C / W when mounted on a 1 in2 pad of 2 oz copper. 4Guarantee by Engineering test TYPICAL 2020/8/26 A.1 EMB07N03HS LIMITS ±20 51 46 14 11 110 30 45.0 22.5 5 |
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3PEAK |
Automotive Dual-Channel Ultra-Highspeed GaN Predriver ⚫ AEC-Q100 Grade-1 Qualified (TPM2025Q Only) ⚫ Dual Independent Channels ⚫ 5-V Single Supply with Optimized Output Damping for Gan Reliability ⚫ 7-A Peak Source And 5-A Sink-Drive Current ⚫ 0.69-ns Minimum Input Pulse Width (Typical) ⚫ Low Propagatio |
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Vanguard Semiconductor |
N-Channel Advanced Power MOSFET N-Channel,10V Logic Level Control Enhancement mode Very low on-resistance Fast Switching 100% Avalanche Tested Pb-free lead plating; RoHS compliant VSD018N08HS 80V/53A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10V ID 80 V |
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